904 results about "Dielectric thin films" patented technology

A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH3)2 as a functional group.

A liquid crystal display panel includes a counter substrate having a counter electrode and a multi-layered dielectric film both formed thereon, and an array substrate formed with pixel electrodes and thin-film transistors serving as switching elements. A layer of polymer dispersed liquid crystal material containing a UV-curable resin component and a liquid crystal component is sandwiched and sealed between the counter and array substrates. A light shielding film is formed over each thin-film transistor. The multi-layered dielectric film is a laminated structure of alternating thin-films of SiO2 and HfO2. Since the multi-layered dielectric film is of a nature capable of transmitting UV-rays of light therethrough, the UV-curable resin component positioned underneath the multi-layered dielectric film can be cured during the manufacture. Also, since the multi-layered dielectric film is of a nature capable of reflecting light of a visible region, it serves as a black matrix, reflecting the visible light modulated by the display panel. Black beads are used to keep the film thickness of the liquid crystal layer at a predetermined value. Preferably, a dielectric thin-film having a relative dielectric constant smaller than that of the liquid crystal material is formed on signal lines for transmitting signals to the thin-film transistors, to thereby accomplish an electromagnetic shield. Where color filters are to be formed on the pixel electrodes, those color filters may be formed on the signal lines to accomplish the electromagnetic shield.

A method of forming a high dielectric film for a semiconductor device comprises supplying a first source gas to a reaction chamber during a first time interval, supplying a first reactant gas to the reaction chamber during a second time interval after the first time interval, supplying a second source gas to the reaction chamber for a third time interval after the second time interval, supplying a second reactant gas to the reaction chamber for a fourth time interval after the third time interval, and supplying an additive gas including nitrogen to the reaction chamber during a fifth time interval.

Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.