5518 results about "Recording layer" patented technology

An inline processing system for patterning magnetic recording layers on hard discs for use in a hard disc drive. Discs are processed on both sides simultaneously in a vertical orientation, in round plate-like holders called MDCs. A plurality (as many as 10) discs are held in a dial carrier of the MDC, and transferred from one process station to another. The dial carrier of the MDC may be rotated and / or angled at up to 70° from normal in each process station, so that one or a plurality of process sources may treat the discs simultaneously. This configuration provides time savings and a reduction in the number and size of process sources needed. A mask enhancement process for patterning of magnetic media, and a filling and planarizing process used therewith, are also disclosed.

A multi-layered information recording medium including a plurality of recording layers, the multi-layered information recording medium comprising: a user data area for recording user data; and a plurality of spare areas including at least one replacement region, wherein when the user data area includes at least one defect region, the at least one replacement region may be used in place of the at least one defect region, wherein a first spare area of the plurality of spare areas is positioned so as to be contiguous to a first user data area of a first recording layer, a second spare area of the plurality of spare areas is positioned so as to be contiguous to a second user data area of a second recording layer, and the first spare area and the second spare area are positioned approximately at the same radial position on the multi-layered information recording medium.

A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.

A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

A perpendicular magnetic recording medium comprising a substrate, a soft underlayer, a seed layer, a non-magnetic FCC NiW alloy underlayer, a non-magnetic HCP underlayer, and a magnetic layer. We have discovered that the combination of a seed layer comprising Ta and a NiW alloy underlayer uniquely improves media recording performance and thermal stability by achieving excellent coercivity of the thin bottom magnetic recording layer and narrow C axis orientation distribution.

A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

A write-once optical disc, and a method and apparatus for recording management information on the write-once optical disc, are provided. The optical disc includes at least one recording layer, and at least one SRR entry. Each SRR entry corresponds to an SRR and includes at least one status field for indicating a recording status of the corresponding SRR. The status field includes a session start flag for indicating whether the corresponding SRR is a start of a session, the session being formed by a group of the SRRs. Each SRR entry further includes a start address field indicating where the corresponding SRR starts, and a last address field indicating the last recorded address of the corresponding SRR.

A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read / write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site.

According to one embodiment, a method of manufacturing a magnetic recording medium includes depositing a magnetic recording layer on a substrate, forming masks on areas corresponding to recording regions of the magnetic recording layer, partially etching the magnetic recording layer in areas not covered with the masks with an etching gas to form protrusions and recesses on the magnetic recording layer, modifying the magnetic recording layer remaining in the recesses with Ne gas to form non-recording regions, and forming a protecting film on an entire surface.

A temperature indicating display device capable of displaying a thermo-history above a predetermined temperature reliably and irreversibly. Moreover, it is possible to provide a laminated body having a temperature detecting layer and an information recording film layer. When the temperature indicating display device is exposed to a predetermined temperature, an irreversible shift is caused and the temperature history can be displayed. Moreover, the temperature indicating display device includes an information recording film layer containing information, an information record holding layer for holding the information, and a temperature detection agent layer composed of a material whose state is shifted according to a temperature and is characterized in that when a predetermined temperature is detected, the material of the temperature detection agent layer is changed so as to change the display state of information recorded in the information recording layer. A laminated body using the temperature indicating display device, a vessel containing the device, and a labeled temperature indicating display device are also disclosed. Furthermore, the present invention provides a side-type temperature indicating display device in which a conventional information display member can be used as it is.

Disclosed herein are a dot-patterned structure for magnetic recording bits and a magnetic recording medium provided therewith. The former exhibits high functionality and high performance owing to good crystallinity. The dot-patterned structure is composed of a first layer, which is continuous, and a second layer, which is discrete. The magnetic recording medium having a dot-patterned recording layer is formed by the steps of treating an underlying layer by lithography, thereby forming grooves, filling the grooves by epitaxial growth with the same material as the underlying layer, removing the photoresist used for lithography in a solvent, thereby forming pits, and filling the pits by epitaxial growth with a magnetic film as the recording layer.

The present invention provides an optical recording medium which incorporates an inorganic based recording layer which has a high reflectance, sufficient for reproduction compatibility on devices such as CD-ROM drives, as well as a high degree of modulation between the state prior to recording and that after recording, as well as an information recording method therefor. Accordingly, an optical recording medium comprises a substrate (2) which is substantially transparent with respect to a recording light beam and a reproduction light beam, a first recording layer (3) which is layered on top of the substrate (2) and which incorporates as the main constituent a metal which has a low melting point and a high reflectance, and a second recording layer (4) which is layered on top of the first recording layer (3) and which will, due to heat generated from irradiation of a light beam through the substrate (2), either mix, or alternatively react, with the first recording layer (3) to form an alloy of low reflectance as well as forming irregularities or pitting in the surface, thereby enabling the recording of information. Due to the heat generated from irradiation of a recording light beam through the substrate (2) the first recording layer (3) and the second recording layer (4) are either mixed, or alternatively reacted to form an alloy as well as forming irregularities or pitting in the surface, thereby recording information.

A data read / write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

A resistor element formed of a peel-preventive film, a recording layer made of chalcogenide, and an upper electrode film is formed on a semiconductor substrate, first and second insulation films are formed so as to cover the resistor element, a via hole for exposing the upper electrode film is formed through the first and second insulation films, and a plug for electrical connection to the upper electrode film is formed in the via hole. To form the via hole, the first insulation film made of silicon nitride is used as an etching stopper to perform dry etching on the second insulation film. Then, dry etching is performed on the first insulation film to expose the upper electrode film from the via hole.

A method of fabricating a complex IC in two parts and making the electrical connections between them afterwards is described. By this method, a ferroelectric RAM is fabricated in two parts, where the first part has an array of unit cells each of those has a transistor or a group of transistors serving the purpose of selecting one address for data recording and has an array of electrically conductive pads facing upward, protruding out from the surface of the first part, where the second part consists of a data-recording layer on another substrate. The data-recording layer consists of ferroelectric material and is pressed on the first part during data writing and reading.

A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, each having memory cells, bit lines and word lines; a read / write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read / write circuit; and third vertical wirings disposed the word lines to the read / write circuit. The memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d” orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines word lines; a read / write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read / write circuit; and third vertical wirings disposed to connect the word lines to the read / write circuit, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

The present invention provides a digital content kiosk system operable for delivering selected digital content to a user. The digital content kiosk system of the present invention includes a limited-play recordable data storage medium configured to receive selected digital content and a data storage media recording device operable for recording the selected digital content on the limited-play recordable data storage medium at the request of a user. The limited-play recordable data storage medium of the present invention includes a reflective layer, a recording layer disposed directly or indirectly adjacent to the reflective layer, and at least one of a reactive layer and a reactive bonding adhesive layer disposed between the data storage media recording device and at least one of the reflective layer and the recording layer.

A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second wiring line electrically connected to an upper part of the laminated structure, wherein a high Young's modulus region having a Young's modulus of a higher value than that of a Young's modulus of a material forming the recording layer is provided close to a side surface of the laminated structure.

Provision is made to perform a write trial process in a stable manner at all times in a write trial area for the purpose of determining optimum recording power. Sub-areas of the write trial area are used successively from an inner circumference side of the medium to an outer circumference side of the medium with respect to the spiral direction that extends from the outer circumference side of the medium to the inner circumference side of the medium, and the sub-areas of the write trial area are used successively from the outer circumference side of the medium to the inner circumference side of the medium with respect to the spiral direction that extends from the inner circumference side of the medium to the outer circumference side of the medium With this provision, the write trial process is performed by accessing a sub-area portion of interest without accessing the sub-area portion having undergone the write trial, no matter which record layer is used. Servo control and address read can thus be stabilized. As a result, a seek operation toward the sub-area of interest is also stabilized, thereby achieving a stable write trial process.

Metal alloy heatsink films for magnetic recording media are disclosed. The metal alloy heatsink films possess both high thermal conductivity and improved mechanical properties such as relatively high hardness. The metal alloy heatsink films also have controlled microstructures which are compatible with subsequently deposited crystalline magnetic recording layers. The films may comprise single phase CuZr or AgPd alloys having a selected crystal structure and orientation. The combination of high thermal conductivity, good mechanical properties and controlled microstructures makes the metal alloy heatsink films suitable for various applications including heat assisted magnetic recording systems.

Provided are a magnetic disk comprising a granular magnetic recording layer which causes less noise even with a recording capacity thereof of 250 G or more bits per square inch; and a method for manufacturing the same. The magnetic disk according to the present invention comprises: a granular magnetic recording layer (20) which is formed on a disk substrate 10 directly or via an intermediate layer and which has non-magnetic regions between granular columnar particles; and an auxiliary recording layer (22) which is formed on the granular magnetic recording layer 20 and which causes exchange interaction among the granular columnar particles, wherein the auxiliary recording layer (22) contains 0.1 to 3 moles of oxygen.

An information recording medium and a supporter used for the information recording medium capable of recording a land / groove recording by using a high density recording technique such as a super-resolution, resulting in a high density recording. An information recording medium B has a supporter 1A, on which a recording layer 5 is formed. On the supporter 1A, lands 2 and groove 3 are alternately formed as a minute track pattern. A crevice 4 having a depth Dc larger than a depth Dg of the respective grooves 3 is formed in the respective grooves 3 at one end of the respective grooves 3 in a width direction of the respective grooves.

In a phase-change recording medium, a recording medium is provided with a barrier layer including Ge-N, Ge-N-O between a recording layer and a dielectric protective layer in order to prevent a chemical reaction and an atom diffusion between the recording layer and the dielectric protective layer. A barrier material can be also applied to the protective layer itself. Thereby, it is possible to considerably suppress a reduction of a reflectivity and a reduction of a signal amplitude due to the repeat of recording and erasing, such reductions being observed in a conventional phase-change optical information recording medium, and thereby the number of overwriting times can be increased.

A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines word lines; a read / write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read / write circuit; and third vertical wirings disposed to connect the word lines to the read / write circuit, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

A magnetic recording medium (10) has a substrate (12) and a perpendicular magnetic recording layer (30) formed over the substrate (12). The perpendicular magnetic recording layer (30) has a granular layer (20) in which a magnetic signal is recorded and a continuous film layer (24) magnetically coupled to the granular layer (20). The continuous film layer (24) has hard magnetic portions (204) formed in positions corresponding to the recording regions where magnetic signals are recorded in the granular layer (20) and magnetic shield portions (202) formed between the hard magnetic portions (204), each having a magnetization curve whose slope is larger than those of the hard magnetic portions in the region where the applied magnetic filed is zero when the magnetization curve is measured, and each having a residual magnetic polarization smaller than those in the hard magnetic portions.