791 results about "Magnetic anisotropy" patented technology

A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

In a magnetic disk having at least a glass substrate, a plurality of underlayers formed over the glass substrate, and a magnetic layer formed over the plurality of underlayers, at least one of the underlayers is an amorphous underlayer containing a VIa group element and carbon and, given that the remanent magnetization in a circumferential direction of the disk is Mrc and the remanent magnetization in a radial direction of the disk is Mrr, the magnetic disk has a magnetic anisotropy in which Mrc / Mrr being a ratio between Mrc and Mrr exceeds 1.

The reversible transverse susceptibility of magnetic nanoparticles is used to achieve magnetic flux amplification in magnetic resonance settings. Nanoparticles having substantially uniaxial or unidirectional magnetic anisotropy and a reversible transverse susceptibility in the presence of the high DC magnetic field provide either or both of an amplification of the generated signal of an inductive coil or the detected signal of an inductive coil.

A method of forming an MTJ memory cell and / or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

A magnetic tunnel transistor (MTT) having a pinned layer that has no antiferromagnetic material in an active area of the sensor. The MTT can include a layer of antiferromagnetic material that is exchange coupled with the pinned layer in an area outside of the active area of me sensor, such as outside the track-width, beyond the stripe height, or both outside the track-width and beyond the stripe height. The pinned layer can also be pinned without any exchange coupling at all. In that case, pinning can be assisted by shape enhanced magnetic anisotropy, by extending the pinned layer beyond the stripe height.

A magnetoresistive sensor having an MR stack biased by high anisotropy hard bias elements thereby reducing distortion in sensor operation and improving head to head operational values. The high anisotropy hard bias elements are formed from a hard magnetic material deposited in a thin film having a substantially axial preferred direction of magnetic anisotropy prior to application of a setting field. The magnetic anisotropy in the hard magnetic material is formed by oblique deposition in a direction approximately normal to the preferred direction of anisotropy in the resulting hard bias element.

A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.