2032results about How to "Suppress mutation" patented technology

Porous bioabsorbable, bioactive and load-bearing composite medical device structure includes a plurality of regular textile planar layers (1a, 1b . . . ) formed of continuous bioabsorbable polymer matrix and bioceramic fibers acting as reinforcements, both included in continuous fibrous elements (3) forming the textile layers. The layers are placed on top of each other to form a structure having two dimensions (x, y) at right angles to each other according to the two dimensions of the textile layer and a third dimension (z) perpendicular to them and resulting from the piling of the layers. A plurality of passages extend through the layers as a result of the openings (2) defined by portions of the continuous fibrous elements (3) extending substantially in the direction of the plane. The continuous fibrous elements (3) comprise both bioactive ceramic reinforcing fibers which form a reinforcing structure and a bioabsorbable polymer matrix material which forms a matrix which binds the layers together and also binds the portions of continuous fibers defining the openings together, thereby forming the passages and stiffening the structure. This bioactive and bioabsorbable composite structure is suitable to be used as a basic structure in medical devices, especially in osteochondral applications where the load-bearing properties of implant are required.

A pulse oximetry sensor comprises emitters configured to transmit light having a plurality of wavelengths into a fleshy medium. A detector is responsive to the emitted light after absorption by constituents of pulsatile blood flowing within the medium so as to generate intensity signals. A sensor head has a light absorbing surface adapted to be disposed proximate the medium. The emitters and the detector are disposed proximate the sensor head. A detector window is defined by the sensor head and configured so as to limit the field-of-view of the detector.

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

In a source driver (14) provided in an electroluminescent (EL) display device of the present invention, the gate voltage of a first-stage current source formed by a transistor (631) is applied to the gate of a transistor (632a) which is a second-stage current source situated next to the transistor (631) and, as a result, a current flowing through the transistor (632a) is transferred to a transistor (632b) which is a second-stage current source. In addition, the gate voltage of the transistor (632b) is applied to the gate of a transistor (633a) which is a third-stage current source situated next to the transistor (632b) and, as a result, a current flowing through the transistor (633a) is transferred to a transistor (633b) which is a third-stage current source. The gate of the transistor (633b) is provided with a large number of current sources (634) corresponding to the number of bits required.

A wireless power transfer system includes a power transmitter including a power transmission resonator composed of a power transmission coil and a resonant capacitance; and a power receiver including a power receiving resonator composed of a power receiving coil and a resonant capacitance. The system further includes a power transmission auxiliary device including an auxiliary resonator composed of an auxiliary coil and a resonant capacitance. The power transmission auxiliary device and the power transmission device oppose each other, forming a power receiving space for placing the power receiving coil between the power transmission coil and the auxiliary coil, and power transfer is performed in the power receiving space while involving a movement of the power receiving coil including at least one of a displacement and a rotation. The power transfer can be performed with stable efficiency in spite of the movement of the power receiver.

A communication device includes a case, a high frequency coupler that is disposed inwards from the surface of the case so as to be spaced apart from the surface and transmits and receives a signal of an induction electric field, and a surface wave transmission path that is disposed between the radiation surface of the induction electric field of the high frequency coupler and the surface of the case.

Disclosed are a conjugated diolefin (co) polymer rubber formed from either a conjugated diolefin or a conjugated diolefin and an aromatic vinyl compound, wherein the (co) polymer rubber has a primary amino group and an alkoxysilyl group which are bonded to a (co) polymer chain; a process for producing the same; a rubber composition; a composite; and a tire. The (co) polymer rubber has satisfactory processability, and can give an automotive tire tread having a balance among wear resistance, failure characteristics, low hysteresis loss and wet-skid characteristics.

This invention provides a display apparatus in which it is possible to have a light emitting element emitted light with constant luminance without coming under the influence of deterioration over time, and it is possible to realize accurate gray scale express, and yet, it is possible to speed up writing of a signal current to each pixel, and influence of noise of a leak current etc. is suppressed, and a driving method thereof. A plurality of pairs of switch parts and current source circuits are disposed in each pixel. Switching of each of a plurality of the switch parts is controlled by a digital video signal. When the switch part is turned on, by a current supplied from the current source circuit making a pair with the switch part, the light emitting element emits light. A current which is supplied from one current source circuit to the light emitting element is constant. A value of a current flowing through the light emitting element is comparable to a value of added currents which are supplied to the light emitting element from respective all current source circuits making pairs with the switch parts which are in the conductive states.

Upon formation of a layer such as an emissive layer of an organic EL element by attaching an emissive material onto a substrate (10), an evaporation mask (100) including an opening (110) corresponding to the layer formed to have a plurality of individual patterns and having an area, for example, smaller than the substrate is disposed between the substrate (10) and a material source (200). A relative position between the mask (100) and the material source (200), and the substrate (10) is slid by a predetermined pitch corresponding to the size of a pixel of the substrate (10), thereby forming a material layer (such as the emissive layer 64) in a predetermined region of the substrate. As a result, the material layer can be formed on the substrate through, for example, evaporation with a high accuracy.

A radio frequency IC device includes a radio frequency IC chip, a feeder circuit substrate, and a radiating plate. The feeder circuit substrate includes a feeder circuit that electrically connects to the radio IC chip and that includes a resonance circuit and / or a matching circuit including inductance elements. The feeder circuit substrate is bonded to the radiating plate, which radiates a transmission signal supplied from the feeder circuit and supplies a received signal to the feeder circuit. The inductance elements are arranged in spiral patterns wound in opposite directions and couple to each other in opposite phases. The radio frequency IC device is able to obtain a radio frequency IC device that is not susceptible to being affected by a usage environment, minimizes variations in radiation characteristics, and can be used in a wide frequency band.

A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.

A continuously variable transmission apparatus has clutch device having a low speed clutch; a high speed clutch; and, a controller switching the transmission state into any one of a low speed mode and a high speed mode by connecting any one of the clutches, wherein timings for signaling by the controller for switching the connected and disconnected states of the clutches vary according to the switching directions of the low speed and high speed modes; and, a timing for signaling for connecting the low speed clutch with respect to the moment for signaling for cutting off the connection of the high speed clutch in order to switch the high speed mode over to the low speed mode is set earlier than a timing for signaling for connecting the high speed clutch with respect to the moment for signaling for cutting off the connection of the low speed clutch.

A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities, whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.

A semiconductor device includes a semiconductor substrate; a diffusion region which is formed in the semiconductor substrate and serves as a region for the formation of a MIS transistor; an element isolation region surrounding the diffusion region; at least one gate conductor film which is formed across the diffusion region and the element isolation region, includes a gate electrode part located on the diffusion region and a gate interconnect part located on the element isolation region, and has a constant dimension in the gate length direction; and an interlayer insulating film covering the gate electrode. The semiconductor device further includes a gate contact which passes through the interlayer insulating film, is connected to the gate interconnect part, and has the dimension in the gate length direction larger than the gate interconnect part.

A main power source supplies current through path impedance to a power terminal of an integrated circuit device under test (DUT). The DUT's demand for current at the power input terminal temporarily increases following edges of a clock signal applied to the DUT during a test as transistors within the IC switch in response to the clock signal edges. To limit variation (noise) in voltage at the power input terminal, an auxiliary power supply supplies an additional current pulse to the power input terminal to meet the increased demand during each cycle of the clock signal. The magnitude of the current pulse is a function of a predicted increase in current demand during that clock cycle, and of the magnitude of an adaption signal controlled by a feedback circuit provided to limit variation in voltage developed at the DUT's power input terminal.

A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.