10930 results about "Anisotropy" patented technology

In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such thatthe direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel tothe direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on sidewalls and an upper surface of the first hard mask pattern, such that the third layer includes a top surface having a recess formed between two adjacent first line patterns. A second hard mask pattern including a plurality of second line patterns each extending in the first direction within the recess is formed. Then, the third layer is anisotropically etched to selectively expose an etch target layer between the first line patterns and the second line patterns. Then, the etch target layer is anisotropically etched using the first hard mask pattern and the second hard mask pattern as an etch mask.

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.

Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etching of self-aligned contact structures in various processes. Pulsing can be applied according to this invention to the flow rate of a gas such as an etchant gas, a gas that leads to the deposition of a protective layer, a gas that modifies the deposition of a protective layer, and a gas that modifies etching.

A process for trimming a photoresist layer during the fabrication of a gate electrode in a MOSFET is described. A bilayer stack with a top photoresist layer on a thicker organic underlayer is patternwise exposed with 193 nm or 157 nm radiation to form a feature having a width w1 in the top layer. A pattern transfer through the underlayer is performed with an anisotropic etch based on H2 / N2 and SO2 chemistry. The feature formed in the bilayer stack is trimmed by 10 nm or more to a width w2 by a HBr / O2 / Cl2 plasma etch. The pattern transfer through an underlying gate layer is performed with a third etch based on HBr / O2 / Cl2 chemistry. The underlayer is stripped by an O2 ashing with no damage to the gate electrode. Excellent profile control of the gate electrode is achieved and a larger (w1−w2) is possible than in prior art methods.

The present invention provides a method and apparatus for the production and labeling of objects in a manner suitable for the prevention and detection of counterfeiting. Thus, the system incorporates a variety of features that make unauthorized reproduction difficult. In addition, the present invention provides an efficient means for the production of labels and verification of authenticity, whereby a recording apparatus which includes a recording medium, having anisotrophic optical domains, along with a means for transferring a portion of the recording medium to a carrier, wherein a bulk portion of the recording medium has macroscopically detectable anisotrophic optical properties and the detecting apparatus thereon.

The present invention provides a method and apparatus for the production and labeling of objects in a manner suitable for the prevention and detection of counterfeiting. Thus, the system incorporates a variety of features that make unauthorized reproduction difficult. In addition, the present invention provides an efficient means for the production of labels and verification of authenticity, whereby a recording apparatus which includes a recording medium, having anisotrophic optical domains, along with a means for transferring a portion of the recording medium to a carrier, wherein a bulk portion of the recording medium has macroscopically detectable anisotrophic optical properties and the detecting apparatus thereon.

This invention is directed to a downhole method and apparatus for simultaneously determining the horizontal resistivity, vertical resistivity, and relative dip angle for anisotropic earth formations. The present invention accomplishes this objective by using an antenna configuration in which a transmitter antenna and a receiver antenna are oriented in non-parallel planes such that the vertical resistivity and the relative dip angle are decoupled. Preferably, either the transmitter or the receiver is mounted in a conventional orientation in a first plane that is normal to the tool axis, and the other antenna is mounted in a second plane that is not parallel to the first plane. This invention also relates to a method and apparatus for steering a downhole tool during a drilling operation in order to maintain the borehole within a desired earth formation. The steering capability is enabled by computing the difference or the ratio of the phase-based or amplitude-based responses of the receiver antennas which are mounted in planes that are not parallel to the planes of the transmitter antennas. Although this invention is primarily intended for MWD or LWD applications, this invention is also applicable to wireline and possibly other applications.

Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.

This invention is directed to a downhole method and apparatus for simultaneously determining the horizontal resistivity, vertical resistivity, and relative dip angle for anisotropic earth formations. The present invention accomplishes this objective by using an antenna configuration in which a transmitter antenna and a receiver antenna are oriented in non-parallel planes such that the vertical resistivity and the relative dip angle are decoupled. Preferably, either the transmitter or the receiver is mounted in a conventional orientation in a first plane that is normal to the tool axis, and the other antenna is mounted in a second plane that is not parallel to the first plane. Although this invention is primarily intended for MWD or LWD applications, this invention is also applicable to wireline and possible other applications.

An apparatus comprises a fingerprint sensor having a set of capacitive elements configured for capacitively coupling to a user fingerprint. The fingerprint sensor may be disposed under a control button or display element of an electronic device, for example one or more of a control button and a display component. A responsive element is responsive to proximity of the user fingerprint, for example one or both of a first circuit responsive to motion of the control button, and a second circuit responsive to a coupling between the fingerprint and a surface of the display element. The fingerprint sensor is disposed closer to the fingerprint than the responsive element. The control button or display component may include an anisotropic dielectric material, for example sapphire.

There is provided an optical device, including a light waves-transmitting substrate having two major surfaces and edges, optical means for coupling light into the substrate by total internal reflection, and a plurality of partially reflecting surfaces (22a, 22b) carried by the substrate wherein the partially reflecting surfaces (22a, 22b) are parallel to each other and are not parallel to any of the edges of the substrate, and wherein one or more of the partially reflecting surfaces (22a, 22b) is an anisotropic surface.

Medical diagnostic apparatus and methods are disclosed. Ultrasound radiation pressure selectively modulates a target area within a body. One or more pulses of radiation containing temporally correlated groups of photons are generated. The photons are characterized by two or more different wavelengths that are selected to have specific interaction with a target chromophore. The two or more different wavelengths are also selected to have substantially similar scattering cross-sections and anisotropy parameters in the target and its surroundings. The pulses of radiation are injected into the body proximate the target area being modulated by the radiation pressure field. Photon groups at each of the different wavelengths that are backscattered from the target area are detected in temporal coincidence. Time-gated background-free amplification of the return signal is used to exclude photons which could not by virtue of their arrival time have interacted with the radiation-pressure-modulated target. Photon groups are selected with a modulation component at the modulation frequency of the radiation pressure modulation field, or at a harmonic of the modulation frequency. From the arrival rate of the detected temporally correlated photon pairs or multiplets, chemical information about the target area, such as an oxygenation or pH level can be inferred. Cardiac output may be computed from measurements of venous and / or arterial oxygenation using this technique.

A heat sink assembly for an electronic device or a heat generating device(s) is constructed from an ultra-thin graphite layer. The ultra-thin graphite layer exhibits thermal conductivity which is anisotropic in nature and is greater than 500 W / m° C. in at least one plane and comprises at least a graphene layer. The ultra-thin graphite layer is structurally supported by a layer comprising at least one of a metal, a polymeric resin, a ceramic, and a mixture thereof, which is disposed on at least one surface of the graphite layer.

Anisotropic film laminates for use in image-preserving reflectors such as rearview automotive mirror assemblies, and related methods of fabrication. A film may comprise an anisotropic layer such as a light-polarizing layer and other functional layers. The film having controlled water content is heated under omnidirectional pressure and vacuum to a temperature substantially equal to or above a lower limit of a glass-transition temperature range of the film so as to be laminated to a substrate. The laminate is configured as part of a mirror structure so as to increase contrast of light produced by a light source positioned behind the mirror structure and transmitted through the mirror structure towards a viewer. The mirror structure is devoid of any extended distortion and is characterized by SW and LW values less than 3, more preferably less than 2, and most preferably less than 1.

A novel on-the-fly data processing technique is useful for extracting signals from the azimuthal variation of the directional measurements acquired by a logging tool within a borehole. The relevant boundary, anisotropy and fracture signals are extracted from the formation response through fitting of the azimuthal variation of the measured voltages to some sinusoidal functions. The orientation of the bedding is also obtained as a result. The extracted directional signals are useful for obtaining boundary distances and making geosteering decisions. Two techniques involving inversion and cross-plotting may be employed, depending on the nature of the boundary. A Graphical User Interface (GUI) is part of a system to facilitate flexible definition of inversion objectives, for improving the inversion results, and for visualization of the formation model as well as inversion measurements.

The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

Anisotropic film laminates for use in image-preserving reflectors such as rearview automotive mirror assemblies, and related methods of fabrication. A film may comprise an anisotropic layer such as a light-polarizing layer and other functional layers. The film having controlled water content is heated under omnidirectional pressure and vacuum to a temperature substantially equal to or above a lower limit of a glass-transition temperature range of the film so as to be laminated to a substrate. The laminate is configured as part of a mirror structure so as to increase contrast of light produced by a light source positioned behind the mirror structure and transmitted through the mirror structure towards a viewer. The mirror structure is devoid of any extended distortion and is characterized by SW and LW values less than 3, more preferably less than 2, and most preferably less than 1.

A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co / Ni)x multilayer. The (Co / Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co / Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.

A magnetic element is disclosed that has a composite free layer with a FM1 / moment diluting / FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

In a first aspect of the invention, an image display device, in which one or more groups of particles or liquid powders are sealed between opposed two substrates, at least one of two substrates being transparent, and, in which the particles or the liquid powders, to which an electrostatic field produced by two groups of electrodes having different potentials is applied, are made to move so as to display an image, has a construction such that a member for transmitting a signal, which is applied to circuits for an image display, is provided to the substrate by means of an anisotropic conductive film and members such as the electrode are provided to a substrate opposed to a transparent substrate. In second to sixth aspects of the invention, an image display device has a construction such that the electrode is arranged to a surface of the substrate through a transparent elastic member, or, an anti-reflection layer is arranged, or, a connection operation between two substrates through a partition wall is optimized.

An interlayer insulating film composed of an organic compound film containing an organic component as a main constituent is deposited on a semiconductor substrate. Then, etching is performed with respect to the interlayer insulating film by using a plasma derived from an etching gas containing an ammonia gas as a main constituent. As a result, active hydrogen is generated in the plasma derived from the ammonia gas to decompose the organic component into hydrogen cyanide, whereby etching proceeds. Since a surface of the organic compound film is efficiently nitrided by nitrogen generated from the ammonia gas, the sidewalls of a depressed portion in the organic compound film are protected so that an excellent anisotropic property is provided. Since the etching gas does not contain a component which oxidizes the organic compound film, the problem does not occur that a gas is generated from the organic compound film in a subsequent heat treatment process.

The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

A plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma are provided. Small amounts of nitrogen (5% up to 10%) can be added to a BCl3 comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.

An adaptive optic for refractive lens exchange or cataract patients. The intracapsular implant comprises an elastomeric monolith with an equilibrium memory shape that imparts to the capsular sac's periphery the natural shape of the capsule in an accommodated state. In one embodiment, the monolith carries a recessed deformable central lens portion having an ultralow modulus that allows for high accommodative amplitude in response to equatorial tensioning. In a preferred embodiment, the adaptive optic defines an anisotropic modulus with a plurality of on-axis, rotationally symmetric elastomer block portions each having a different Young's modulus. The invention further provides composite materials for enhancing deformation of lens curvature, including the use of auxetic polymeric materials and negative stiffness materials. In preferred embodiments, at least a portion of the lens is fabricated of a shape memory polymer that provides a memory shape and a temporary shape with a reduced cross-sectional shape for introduction into the patient's eye.

A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

A method and structure for a non-volatile magnetic random access memory (MRAM) device that has a stable magnetic electrode, an oxide layer adjacent the stable magnetic electrode, and a free magnetic electrode. The oxide layer is between the stable magnetic electrode and the free magnetic electrode. In the invention, a conductor is connected to a stable magnetic electrode. The oxide layer has a resistance at levels to allow sufficient power dissipation to lower the anisotropy of the free magnetic electrode through current induced heating. Current-induced heating is used in combination with spin-transfer torque or a magnetic field to switch the free magnetic electrode.