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7629 results about "Magnetization" patented technology
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In classical electromagnetism, magnetization or magnetic polarization is the vector field that expresses the density of permanent or induced magnetic dipole moments in a magnetic material. The origin of the magnetic moments responsible for magnetization can be either microscopic electric currents resulting from the motion of electrons in atoms, or the spin of the electrons or the nuclei. Net magnetization results from the response of a material to an external magnetic field. Paramagnetic materials have a weak induced magnetization in a magnetic field, which disappears when the magnetic field is removed. Ferromagnetic and ferrimagnetic materials have strong magnetization in a magnetic field, and can be magnetized to have magnetization in the absence of an external field, becoming a permanent magnet. Magnetization is not necessarily uniform within a material, but may vary between different points. Magnetization also describes how a material responds to an applied magnetic field as well as the way the material changes the magnetic field, and can be used to calculate the forces that result from those interactions. It can be compared to electric polarization, which is the measure of the corresponding response of a material to an electric field in electrostatics. Physicists and engineers usually define magnetization as the quantity of magnetic moment per unit volume. It is represented by a pseudovector M.
Magnetic rotary system for input devices
InactiveUS20110025311A1Easy to manufactureMagnetization is simpleDigital data processing detailsUsing electrical meansMagnetizationEngineering
Embodiments of the present invention include a roller for an input device, where the roller's absolute angular position is measured by a magnetic encoder. A magnet is attached to the roller, possibly inside the roller so as to make the embodiment more compact. In one embodiment, the magnetization is simple and low cost. Further, tight tolerances are not required, and such a system is easy to manufacture. In one embodiment, the sensor is covered by any non-ferromagnetic material, to protect it from foreign particles, and to reduce ESD. In one embodiment, the wheel consumes much less power than conventional wheels in input devices. In one embodiment, the tilting of the wheel is measured using the same sensor that is used for measuring the rotation of the wheel. In one embodiment, a ratcheting feel provided to the user when rotating the wheel is synchronized with the rotation signal.
Owner:LOGITECH EURO SA
Scan element for use in scanning light and method of making the same
A scan element includes a bobbin having a central axis about which is wound an electromagnetic wire coil and having a flange oriented generally transverse to the central axis. At least one elastomeric support has a first end coupled to the flange. A permanent magnet has first and second surfaces, a central axis, and a magnetization direction oriented generally transverse to the central axis of the permanent magnet. The magnet is supported by a second end of the elastomeric support. A mirror has a central axis and is mounted on the second surface of the magnet. The central axes of the mirror and magnet are coaxial with the central axis of the bobbin. The elastomeric support provides a return force when the magnet and the mirror are rotated at an angle from the central axis during energization of the electromagnetic wire coil.
Owner:METROLOGIC INSTR
Thermally-assisted magnetic random access memory (MRAM)
It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electrically conducting bit lines and electrically conducting word lines which form intersections therebetween, b) a storage cell disposed at each of said intersections, each storage cell comprising at least one reversible magnetic region or layer characterized by a magnetization state which can be reversed by applying thereto a selected external magnetic field, said reversible magnetic layer comprising a material whose magnetization state is more easily reversed upon a change in the temperature thereof, and c) a temperature change generator for changing the temperature of said reversible magnetic layer of only a selected one of said array of storage cells at any moment. To select a cell, it is preferable to select a cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.
Owner:IBM CORP
Magnetoresistive element
A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms<√{square root over ( )}{Jw / (6nAt)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.
Owner:KIOXIA CORP
Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
ActiveUS7035062B1Increase linear densityHigh sensitivityNanomagnetismNanoinformaticsMagnetic reluctanceMagnetization
The present invention provides a tunneling magneto-resistive read sensor structure that improves sensitivity and linear density of the sensor structure. The sensor includes first and second electrodes and a stack positioned between the electrodes. The stack includes first and second free layers with magnetization orientations that are biased relative to each other. A tunneling barrier (insulating layer) or non-magnetic metal spacer is positioned between the first and second free layers. A sense current is passed between the first and second free layers of the stack. The amount of current passing through the first and second free layer changes based upon the orientation of the first and second free layers relative to each other.
Owner:SEAGATE TECH LLC
Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
InactiveUS6950335B2Good reproducibilityEliminate errorsNanomagnetismMagnetic-field-controlled resistorsMagnetizationSemiconductor
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV / kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
Owner:RENESAS ELECTRONICS CORP +1
High speed low power magnetic devices based on current induced spin-momentum transfer
InactiveUS6980469B2Operational advantageReduce the required powerNanomagnetismNanoinformaticsMagnetic memoryMagnetization
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
Owner:NEW YORK UNIV
Magnetoresistive element and magnetic memory
InactiveUS20070297220A1Easily magnetizedNanomagnetismMagnetic-field-controlled resistorsIn planeInter layer
A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.
Owner:KK TOSHIBA
Hybrid write mechanism for high speed and high density magnetic random access memory
A method of writing to a magnetic random access memory comprising: producing a magnetic field along a magnetically hard axis of a free layer of a magnetoresistive element; and passing current through the magnetoresistive element to change a direction of magnetization of the free layer by spin momentum transfer. A magnetic random access memory that operates in accordance with the method is also included.
Owner:SEAGATE TECH LLC
Magnetic tunnel junction memory device
InactiveUS6845038B1Improve permeabilityLow resistivityDigital storageBit linePerpendicular magnetization
A memory cell for magnetic random access memory devices based on a magnetic tunnel junction (MTJ) memory element with a perpendicular orientation of magnetization in pinned and free magnetic layers, and a tunnel barrier layer sandwiched between the pinned and free layers. The memory cell can include the MTJ memory element, a magnetic flux guide in series with selection devices, such as a bit line, a word line, and a transistor. The magnetic flux guide can have two electrically conductive magnetic portions with the MTJ memory element positioned between the magnetic portions. The MTJ memory element is magnetically isolated from the magnetic flux guide by thin non-magnetic conductive spacers. The MTJ memory element is arranged in a vertical space between the intersecting bit and word lines at their intersection region. The memory cell also includes write and excitation lines. The write line is parallel to the bit line and the excitation line is parallel to the word line. The write and excitation lines also intersect each other and define a corner. The MTJ memory element is positioned in the corner of the intercepting write and excitation lines.
Owner:SHUKH ALLA MIKHAILOVNA
Magnetically-controllable delivery system for therapeutic agents
InactiveUS20060041182A1Enhanced magnetizationReduce penetrationStentsElectrotherapyMagnetic gradientMagnetization
A magnetic delivery system for delivering a magnetizable particle to a location in a body, the device includes a magnetizable object implanted in the body, wherein the magnetizable object includes a plurality of segments distributed throughout the magnetizable object and wherein the segments are configured to provide a magnetic gradient for attracting the magnetizable particle and an external source of a magnetic field capable of (i) magnetizing the magnetizable particle and (ii) increasing a degree of magnetization of the magnetizable object and thereby creating the magnetic gradient. A drug delivery system including the magnetic delivery system and a magnetizable particle associated with a therapeutic agent and / or a cell. A cell delivery system based on the magnetic delivery system and a magnetizable particle associated with a cell. A method of using the magnetic delivery system for delivery of a therapeutic agent and / or a cell to a targeted location in a body.
Owner:DREXEL UNIV
Method and system for providing a magnetic transducer having a high moment bilayer magnetic seed layer for a trailing shield
ActiveUS8582241B1Record information storageHeads for perpendicular magnetisationsMagnetic transducersMagnetization
A method and system for providing a magnetic read transducer is described. The magnetic recording transducer includes a write pole, a nonmagnetic gap, a magnetic seed layer, a trailing shield and coil(s) that energize the write pole. The write pole is configured to write to a media. The nonmagnetic gap is between the write pole and the magnetic seed layer. The magnetic seed layer includes a high moment layer and a magnetic buffer layer. The high moment layer is between the nonmagnetic gap and the magnetic buffer layer. The high moment layer has a saturation magnetization greater than 2.3 T and a first corrosion potential. The magnetic buffer layer has a second corrosion potential less than the first corrosion potential. The magnetic seed layer is between the trailing shield and the nonmagnetic gap layer. The magnetic buffer layer is between the trailing shield and the high moment layer.
Owner:WESTERN DIGITAL TECH INC
High performance MTJ element for STT-RAM and method for making the same
ActiveUS20090027810A1Low angular dispersionEasy to operateNanomagnetismMagnetic-field-controlled resistorsSpin angular momentum of lightDamping factor
We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR / R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
Owner:TAIWAN SEMICON MFG CO LTD
Magnetic coupling using halbach type magnet array
InactiveUS6841910B2Reduce leakageIncrease the magnetic field strengthMagnetic circuit rotating partsPermanent-magnet clutches/brakesCouplingMagnetization
A magnetic coupling having two opposed annular arrays of angularly spaced permanent magnets magnetized to create magnetic north poles and magnetic south poles alternately spaced about each array. The north-pole and south-pole magnets of each array are tapered in cross-section from their surfaces at the gap to an annular surface of the array spaced from the gap, and permanent magnet spacer magnets completely fill in the space between the north-pole and south-pole magnets from the annular surface of the array at the gap to the spaced annular surface with the spacer magnets being magnetized generally transversely to the direction of magnetization of the adjacent north-pole, south-pole magnets so that the magnetic field created by the permanent magnets extends across the gap and annularly through each array to cause one of the arrays to rotate in synchronism with the other array.
Owner:QUADRANT TECH CORP
Non-volatile MEMS micro-relays using magnetic actuators
InactiveUS6124650AElectrostatic generators/motorsElectromagnetic relay detailsRelative displacementElectrical conductor
An actuation device employing square-loop latchable magnetic material having a magnetization direction (polarization) capable of being changed in response to exposure to an external magnetic field is disclosed. The magnetic field is created by a conductor assembly with non-solenoid configuration. Once the magnetization direction of the material is so changed, the external magnetic field is no longer required to maintain the new magnetization direction. The latchable magnetic material is disposed on the mobile electrode of a switching device, and another magnetic material is disposed in spaced relation to the latchable magnetic material on a stationary electrode or surface. By applying an electrical current to a conductor assembly arranged proximate the latchable material, a magnetic field is created about the latchable magnetic material, to change the magnetization direction and thereby enable the attraction or repulsion of another magnetic material located on the stationary electrode. The resulting relative displacement of the mobile and stationary electrodes effects the selective connection or disconnection of electrical contacts carried on or associated with the respective electrodes of the actuation device without requiring additional power in order to maintain the switched state of the electrodes.
Owner:WSOU INVESTMENTS LLC +1
Method and system for providing high sensitivity giant magnetoresistive sensors
InactiveUS6888704B1Improve performanceSmall thicknessRecord information storageManufacture of flux-sensitive headsMagnetizationMagnetoresistive sensor
A method and system for providing a magnetoresistive sensor and a read head that includes the magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a nonmagnetic spacer layer and a composite sensor layer. The pinned layer has a first magnetization that is pinned in a particular direction. The nonmagnetic spacer layer resides between the composite sensor layer and the pinned layer. The composite sensor layer includes a CoFe layer and a composite layer adjacent to the CoFe layer. The composite layer includes CoFe and at least one of Ta, Hf, Ti, Nb, Zr, Au, Ag, Cu, B, C, O2, H2 and N2.
Owner:WESTERN DIGITAL TECH INC
Rotating and pivoting magnet for magnetic navigation
A magnet assembly comprising a magnet mounted for pivoting about a first axis spaced from the magnet, and rotating about a second axis that is perpendicular to and intersects with the first axis. The magnet comprising a plurality of segments each with a magnetization direction such that through a combination of pivoting and rotating the magnet projects a magnetic field in any direction at an operating point spaced from the front of the assembly. The segmented construction with segments of different magnetization directions allows small changes in the orientation of the magnet to substantially change the magnet field direction at a system operating point.
Owner:STEREOTAXIS
Rotating and pivoting magnet for magnetic navigation
InactiveUS6975197B2High strengthMinimize inclusionPermanent magnetsMagnetic materialsOperating pointMagnetization
A magnet assembly comprising a magnet mounted for pivoting about a first axis spaced from the magnet, and rotating about a second axis that is perpendicular to and intersects with the first axis. The magnet comprising a plurality of segments each with a magnetization direction such that through a combination of pivoting and rotating the magnet projects a magnetic field in any direction at an operating point spaced from the front of the assembly. The segmented construction with segments of different magnetization directions allows small changes in the orientation of the magnet to substantially change the magnet field direction at a system operating point.
Owner:STEREOTAXIS
Magnetic sensor, magnetic field sensing method, semagnetic recording head, and magnetic memory device
ActiveUS20050219771A1Modification of read/write signalsNanomagnetismFrequency filteringMagnetization
A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter connected to the magnetoresistance element and having its transmittance decreased or increased in substantially the frequency of the magnetic field to output a signal corresponding substantially to the peak of the thermal fluctuation strength of magnetization, and a detector connected to the frequency filter to detect the magnetic field based on the signal of the frequency filter.
Owner:KK TOSHIBA
High speed low power annular magnetic devices based on current induced spin-momentum transfer
InactiveUS20080112094A1Operational advantageReduce the required powerRecord information storageManufacture of flux-sensitive headsElectrical resistance and conductanceMagnetization
A high speed and low power method to control and switch the magnetization direction and / or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and / or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
Owner:NEW YORK UNIV
High-frequency oscillation element, magnetic information recording head, and magnetic storage device
ActiveUS20050023938A1Increase temperatureIncrease speedPiezoelectric/electrostriction/magnetostriction machinesSolid-state devicesMagnetic storageResonance
A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons, a magnetic material which is laminated on the nonmagnetic conductive material, generates magnetic resonance upon injection of the conduction electrons, and imparts magnetic dipole interaction to magnetization of a neighboring magnetic area by means of magnetic vibration stemming from the magnetic resonance, a first electrode electrically coupled with the first magnetic material, and a second electrode electrically coupled with the second magnetic material.
Owner:KK TOSHIBA
Voltage-controlled magnetic memory element with canted magnetization
ActiveUS20140169085A1High tunneling magnetoresistance (TMRImprove adjustabilitySolid-state devicesGalvano-magnetic material selectionStable stateMagnetic memory
A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.
Owner:RGT UNIV OF CALIFORNIA
Magneto-resistance effect element and magnetic memory
InactiveUS20060227465A1Lower average currentNanomagnetismMagnetic-field-controlled resistorsMagnetizationMagnetic memory
It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
Owner:KK TOSHIBA
Magnetoresistive element and magnetic memory
A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.
Owner:KIOXIA CORP
Magnetically shielded conductor
A magnetically shielded conductor assembly with a conductor device and a film of nanomagnetic material located above the conductor device. The conductor device has a resistivity of from about 1 to about 2,000 micro ohm-centimeters. The film of nanomagnetic material has a thickness of from about 100 nanometers to about 10 micrometers and a magnetic shielding factor of at least about 0.5. The nanomagnetic material has a mass density of at least about 0.01 grams per cubic centimeter, a saturation magnetization of from about 1 to about 36,000 Gauss, a coercive force of from about 0.01 to about 5,000 Oersteds, a relative magnetic permeability of from about 1 to about 500,000, and an average particle size of less than about 100 nanometers.
Owner:BIOPHAN TECH
Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
ActiveUS7518835B2Improve switching characteristicsLower average currentRecord information storageManufacture of flux-sensitive headsMagnetic memoryBias field
Owner:SAMSUNG SEMICON
Nanomagnetically shielded substrate
A shielded substrate assembly that contains a magnetic shield with a layer of magnetic shielding material; the magnetic shield has a magnetic shielding factor of at least about 0.5. The magnetic shield contains nanomagnetic material nanomagnetic material with a mass density of at least about 0.01 grams per cubic centimeter, a saturation magnetization of from about 1 to about 36,000 Gauss, a coercive force of from about 0.01 to about 5,000 Oersteds, a relative magnetic permeability of from about 1 to about 500,000, and an average particle size of less than about 100 nanometers. The nanomagnetic material contains magnetic material with a coherence length of from about 0.1 to about 100 nanometers.
Owner:BIOPHAN TECH
Magnetically shielded assembly
A shielded assembly containing a substrate and a shield. The shield contains both nanomagnetic material and a material with an electrical resistivity of from about 1 microohm-centimeter to about 1×1025 microohm centimeters. The nanomagnetic material has a mass density of at least about 0.01 grams per cubic centimeter, a saturation magnetization of from about 1 to about 36,000 Gauss, a coercive force of from about 0.01 to about 5000 Oersteds, a relative magnetic permeability of from about 1 to about 500,000, and an average particle size of less than about 100 nanometers.
Owner:BIOPHAN TECH
Easy axis magnetic amplifier
InactiveUS20050117389A1Improve semiconductor device performanceDigital storageDevice materialMagnetization
Techniques for improved semiconductor device performance are provided. In one aspect, a semiconductor device is provided. The device comprises at least one free magnetic layer, and a magnetic amplifier interacting with the free magnetic layer comprising two or more magnetic layers with at least one nonmagnetic layer therebetween. The nonmagnetic layer may be configured to provide parallel exchange coupling J of the magnetic layers in a range of 0<J<4π t2MS2nyb,the magnetic layers having a long axis and a short axis, wherein t is a thickness of each magnetic layer, Ms is magnetization, ny is a demagnetizing factor defined along the short axis of the magnetic layers and b is a diameter along a short axis of the magnetic layers. A method for switching a semiconductor device having at least one free magnetic layer is also provided.
Owner:IBM CORP
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