342results about How to "Improve semiconductor device performance" patented technology

A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board.

First active region and second and third active regions are defined in a semiconductor substrate within a memory cell area and a logic circuit area, respectively. First to third MOS transistors are formed in the first to third active regions, respectively. As viewed from above, the length of the first and second active regions along the gate width is not greater than the length of the third active region along the gate width. In the isolation insulation film, the upper surface of a peripheral portion provided around the first active region is positioned below the upper surface thereof, and the upper surface of a peripheral portion provided around the second active region is positioned below the upper surface thereof. A gate electrode is formed on the upper surfaces of the first to third active regions and the side surfaces of the first and second active regions.

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

A crystalline semiconductor film having crystal grains of large grain size or crystal grains in which the position and the size are controlled is formed to manufacture a TFT, whereby a semiconductor device that enables a high-speed operation is realized. First, a reflecting member is provided on a rear surface side of a substrate on which a semiconductor film is formed (semiconductor film substrate). When a front surface side of the semiconductor film substrate is irradiated with a laser beam that penetrates the semiconductor film substrate, the laser beam is reflected by the reflecting member to irradiate the semiconductor film from the rear surface side. With this method, an effective energy density is raised in the semiconductor film, and an output time is made long. Thus, the cooling rate of the semiconductor film is made gentle and crystal grains of large grain size are formed. Further, the front surface side of the semiconductor film substrate is irradiated with the laser beam by using a substrate on which a reflecting layer is partially formed as the reflecting member, whereby the semiconductor film is partially irradiated with the laser beam from the rear surface side. Thus, a temperature distribution is generated in the semiconductor film, and the location where a lateral growth is generated and the lateral direction can be controlled. Therefore, the crystal grains of large grain size can be obtained.

The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

There is provided an SOI-MISFET including: an SOI layer; a gate electrode provided on the SOI layer interposing a gate insulator; and a first elevated layer provided higher in height from the SOI layer than the gate electrode at both sidewall sides of the gate electrode on the SOI layer so as to constitute a source and drain. Further, there is also provided a bulk-MISFET including: a gate electrode provided on a silicon substrate interposing a gate insulator thicker than the gate insulator of the SOI MISFET; and a second elevated layer configuring a source and drain provided on a semiconductor substrate at both sidewalls of the gate electrode. A the first elevated layer is thicker than the elevated layer, and the whole of the gate electrodes, part of the source and drain of the SOI-MISFET, and part of the source and drain of the bulk-MISFET are silicided.

An electronic circuit includes a first semiconductor device (4) and a second semiconductor device (3) on a mounting substrate. The mounting substrate includes a plurality of mounting substrate lines (201 to 204) which are connected in common with external terminals of a plurality of bits of the first semiconductor device and external terminals of a plurality of bits of the second semiconductor device for every bit. The mounting substrate lines have lengths thereof from the external terminals of the first semiconductor device to the external terminals of the second semiconductor device made unequal for respective bits. Assembling lines (361 to 364) which reach connecting electrodes of a semiconductor chip from the external terminals of the second semiconductor device have made lengths thereof unequal for respective bits. Here, the unequal lengths of the mounting substrate lines have a relationship which offsets the unequal lengths of the assembling lines. According to such a constitution, it is unnecessary to set lengths between the external terminals of the second semiconductor device and the connecting electrodes of the semiconductor chip equal.

A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.

In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×10¹⁶ spins/cm³ and a carrier density lower than 1×10¹⁵/cm³. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

Packaging performance of a semiconductor device is improved. A semiconductor device has a package substrate having a base material formed of resin; a semiconductor chip mounted on a main surface of the package substrate; a tape substrates being stacked on the package substrate in several stages, and electrically connected to a substrate at a lower stage via a plurality of solder balls; a second-stage chip, third-stage chip, and fourth-stage chip mounted on the tape substrates at respective stages; and a plurality of solder balls provided on a back surface of the package substrate; wherein a sealing body, which resin-seals the semiconductor chip and is formed by resin molding, is formed on a main surface of a package substrate disposed at the lowest stage, and the sealing body is disposed between the package substrate at the lowest stage and the tape substrate stacked thereon.

To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap.

A semiconductor device has a first MOS transistor formed on first active region of the first conductivity type, having first gate electrode structure, first source/drain regions, recesses formed in the first source/drain regions, and semiconductor buried regions buried and grown on the recesses for applying stress to the channel under the first gate electrode structure, and a second MOS transistor formed on second active region of the second conductivity type, having second gate electrode structure, second source/drain regions, and semiconductor epitaxial layers formed on the second source/drain regions without forming recesses and preferably applying stress to the channel under the second gate electrode structure. In a CMOS device, performance can be improved by utilizing stress and manufacture processes can be simplified.

A semiconductor device comprises a metal gate electrode, a passive device and a hard mask layer. The passive device has a poly-silicon element layer. The hard mask layer is disposed on the metal gate electrode and the passive electrode and has a first opening and a second opening substantially coplanar with each other, wherein the metal gate electrode and the poly-silicon element layer are respectively exposed via the first opening and the second opening; and there is a distance between the first opening and the metal gate electrode substantially less than the distance between the second opening and the poly-silicon element layer.

Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.

A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes.

In a manufacturing process of a semiconductor device having a CMISFET, first, a silicon film and a first metal film made of a first metal are reacted with each other through heat treatment, thereby forming a gate electrode of a p-channel type MISFET and a dummy gate electrode of an n-channel type MISFET, which are formed of metal silicide. Subsequently, an insulating film is formed so as to cover the gate electrode but expose the dummy electrode, and then, a metal film formed of a second metal having a work function lower than that of the first metal. The metal film contacts with the dummy gate but not with the gate electrode due to the insulating film interposing therebetween. Thereafter, through heat treatment, the dummy gate electrode and the metal film are reacted with each other to form a gate electrode of the n-channel type MISFET.

A method for manufacturing metal lines in a semiconductor device is provided. The method includes steps of: providing a substrate; forming a first barrier layer on the substrate; forming a sacrificial layer on the first barrier layer; forming an opening penetrating through the sacrificial layer to expose a portion of the first barrier layer; depositing a metal material on the exposed first barrier layer to form a metal line in the opening; removing the sacrificial layer and forming a second barrier layer over the resulting structure; etching the second barrier layer and the first barrier layer while remaining a barrier spacer on a sidewall of the metal line; and forming an insulating layer on the substrate and the barrier spacer. A semiconductor device having the metal lines produced by the method is also provided.

The present invention provides a method for manufacturing a semiconductor device, which comprises: providing an SOI substrate, which comprises a base layer, an insulating layer located on the base layer and a active layer located on the insulating layer; forming a gate stack on the SOI substrate; etching the active layer, the insulating layer and a part of the base layer of the SOI substrate with the gate stack as a mask, so as to form trenches on both sides of the gate stack; forming a crystal dielectric layer within the trenches, wherein the upper surface of the crystal dielectric layer is lower than the upper surface of the insulating layer and not lower than the lower surface of the insulating layer; and forming source/drain regions on the crystal dielectric layer. The present invention further provides a semiconductor device. The present invention is capable of eliminating pathway for leakage current between source/drain regions and SOI substrate at the meantime of reducing contact resistance at source/drain regions.