Methods (100) are provided for fabricating a ferroelectric capacitor in a semiconductor device wafer, comprising forming (118) a lower electrode, depositing (126) PZT ferroelectric material on the lower electrode at a temperature below 450 degrees C., and forming (128) an upper electrode on the PZT. Methods are also provided for fabricating a ferroelectric memory cell in a semiconductor device wafer, comprising forming (106) a transistor in the wafer, forming (108) a nickel silicide structure on the gate or a source / drain of the transistor, forming (110) a dielectric over the transistor, forming (112) a conductive contact extending through the dielectric to the silicide structure, forming (114, 116, 118, 120) a lower electrode on at least a portion of the conductive contact, forming (126) PZT ferroelectric material above and in contact with the lower electrode at a temperature below 450 degrees C., forming (128, 132) an upper electrode above and in contact with the PZT, and patterning (134) the upper electrode, the PZT, and the lower electrode to form a patterned ferroelectric capacitor.