1693results about How to "Lower average current" patented technology

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. A multi step epitaxial process can be used to extend the ridges with different dopant types, high mobility semiconductor, and or advanced multi-layer strutures. For CMOS integrated circuits a capping layer is formed over the a first region. Epitaxial layers are formed in a second region. Then the capping layer is removed from the first region and a capping layer is formed over the second region. Epitaxial layers can than be formed in the first region.

An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

A flexible lighting device, comprising an elongated flexible tube including a translucent tubular shell with opposed tube ends, a flexible helical circuit board positioned in said tube extending between said opposed tube ends, said flexible helical circuit board having an exterior surface spaced from said tubular shell. Electrical circuitry is mounted to the circuit board and is connected to an external input source and an output source of electrical power. A plurality of light emitting diodes (LEDs) is mounted to the exterior surface of the helical circuit board and is electrically connected to the electrical circuitry. The LEDs are positioned adjacent to the tubular wall. The invention includes a method of making the flexible lighting device including providing a parallelogram-shaped flat circuit board having long edges and short edges with acute angles and obtuse angles and further including a stiffening member embedded with said flat circuit board. Electrical circuitry mounted to the flat circuit board and LEDs mounted to the flat circuit board and to the electrical circuitry thereon, are all rolled and extended into a flexible cylindrical circuit board having spaced spirals and gaps that hold the LEDs, and then inserted into the flexible tubular housing. Power input and power output connectors are added to the electrical circuitry of the flexible helical circuit board, and connector end caps are secured to the opposed ends of the tubular housing.