The present invention is to provide a
phase change memory device having a new structure which can be easily manufactured by
mass-production with a high
yield rate, therefore, reducing the cost of process and providing reliable device characteristics, and a manufacturing method thereof. The present invention provides a phase-change memory device comprising: a lower
dielectric layer; a lower
electrode, at least a part of the lateral surface of the lower
electrode being surrounded by the lower
dielectric layer; a thin
dielectric layer including a pore having smaller area than the top surface of the lower
electrode, aligned to the top surface of the lower electrode and extending to the top surface of the lower electrode; and a phase-change
resistor filling the pore and formed on the thin
dielectric layer. In the proposed structure of the present invention, the pores or local damaged spots can provide a micro path of current and localize the phase-changing volume in the phase-change
resistor. Thus, the phase-change memory device can be operated with very low power.