9024 results about "Contact hole" patented technology

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), or Ti{OCH(CH3)2}4 avoids halide contamination from a titanium halide precursor and is safer to handle than a titanium nitrate. After a monolayer of the titanium precursor is deposited on a substrate, a nitrogen containing reactant is introduced to form a TiN monolayer which is followed by a second purge. For TiSiN, a silicon source gas is fed into the process chamber after the TiN monolayer formation. The process is repeated several times to produce a composite layer comprised of a plurality of monolayers that fills a contact hole. The ALD method is cost effective and affords an interconnect with lower impurity levels and better step coverage than conventional PECVD or CVD processes.

A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. With this configuration it is possible to prevent an increase in an aspect ratio of a contact hole formed in an insulation layer in a region in which a transferred device is formed, the semiconductor device including a substrate on which the transferred device and a deposited device coexist.

A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode through the contact hole and allowing the first insulation film to be exposed; patterning the exposed first insulation film and allowing a channel region of the oxide semiconductor layer to be exposed; and increasing the channel region in resistance by forming the second insulation film on the surface including the channel region of the oxide semiconductor layer in the atmosphere including an oxidized gas.

In projection exposure of isolated pattern such as a contact hole, in order to increase the depth of focus a coherence reducing member is disposed on a Fourier transform plane in an image-forming optical path between a mask and a sensitized base, so that coherence is reduced between image-forming beams respectively passing through a plurality of different, concentric regions around the optical axis of the projection optical system on the Fourier transform plane. The coherence reducing member may be a polarization state control member for making a difference in polarization state, a member for making a difference in optical path length, or space filters with different shapes.

A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.