1577 results about "Logic state" patented technology

A sense amplifier circuit for use in a semiconductor memory device has complemented logic states at opposite sides of the latch circuit in the sense amplifier circuit determinate all the time in operation. The sense amplifier circuit takes advantage of a current mirror circuit for ascending or descending a voltage level at the gate of a transistor by charge accumulation or charge dissipation, which turns on or off the transistor so as to control the logic states at opposite sides of the latch circuit in the sense amplifier circuit.

There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of the invention, the memory cell includes two transistors which store complementary data states. That is, the two-transistor memory cell includes a first transistor that maintains a complementary state relative to the second transistor. As such, when programmed, one of the transistors of the memory cell stores a logic low (a binary “0”) and the other transistor of the memory cell stores a logic high (a binary “1”). The data state of the two-transistor complementary memory cell may be read and / or determined by sampling, sensing measuring and / or detecting the polarity of the logic states stored in each transistor of complementary memory cell. That is, the two-transistor complementary memory cell is read by sampling, sensing measuring and / or detecting the difference in signals (current or voltage) stored in the two transistors.

Building programmable resistive devices in contact holes at the crossover of a plurality of conductor lines in more than two vertical layers is disclosed. There are plurality of first conductor lines and another plurality of second conductor lines that can be substantially perpendicular to each other, though in two different vertical layers. A diode and / or a programmable resistive element can be fabricated in the contact hole between the first and second conductor lines. The programmable resistive element can be coupled to another programmable resistive device or shared between two programmable devices whose diodes conducting currents in opposite directions and / or coupled to a common conductor line. The programmable resistive memory can be configured to be programmable by applying voltages to conduct current flowing through the programmable resistive element to change its resistance for a different logic state.

A non-volatile semiconductor memory device includes a memory cell array, a data hold circuit, and a controller A program control function applies a program voltage to a selected memory cell to let data shift from a first logic state to a second logic state. A program verify control function verifies that a programmed data of the selected memory cell shifted to the second logic state. An erratic program verify control function checks that a threshold voltage of a memory cell to be held in the first logic state does not exceed a third value set as an upper limit value of a variation of the first logic state. An over-program verify control function checks that a threshold voltage of the selected memory cell shifted to the second logic state does not exceed a fourth value set as an upper limit thereof.

A probe card provides signal paths between integrated circuit (IC) tester channels and probes accessing input and output pads of ICs to be tested. When a single tester channel is to access multiple (N) IC pads, the probe card provides a branching path linking the channel to each of the N IC input pads. Each branch of the test signal distribution path includes a resistor for isolating the IC input pad accessed via that branch from all other branches of the path so that a fault on that IC pad does not substantially affect the voltage of signals appearing on any other IC pad. When a single tester channel is to monitor output signals produced at N IC pads, the resistance in each branch of the signal path linking the pads of the tester channel is uniquely sized to that the voltage of the input signal supplied to the tester channel is a function of the combination of logic states of the signals produced at the N IC pads. The tester channel measures the voltage of its input signal so that the logic state of the signals produced at each of the N IC output pads can be determined from the measured voltage.

A method is disclosed for the automated synthesis of phase shifters. Phase shifters comprise circuits used to remove effects of structural dependencies featured by pseudo-random test pattern generators driving parallel scan chains. Using a concept of duality, the method relates the logical states of linear feedback shift registers (LFSRs) and circuits spacing their inputs to each of the output channels. The method generates a phase shifter network balancing the loads of successive stages of LFSRs and satisfying criteria of reduced linear dependency, channel separation and circuit complexity.

A probe board provides signal paths between an integrated circuit (IC) tester and probes accessing terminals on the surfaces of ICs formed on a semiconductor wafer for receiving test signals form the IC tester. A branching signal path within the probe board distributes a test signal produced by one channel of the IC tester to several probes. Resistors within the branching signal path resistively isolate the probes from one another so that a fault occurring at any one IC terminal will not affect the logic state of the test signal arriving at any other IC terminal. The isolation resistors are sized relative to signal path characteristic impedances so as to substantially minimize test signal reflections at the branch points.

An output buffer for driving a capacitively-terminated transmission line produces a waveform which comprises a first portion during which the waveform transitions from a voltage V1 to a voltage V2; a second portion during which it remains fixed at V2; a third portion during which it transitions to a voltage V3; and a fourth portion during which it remains fixed at V3. The waveform is created within a unit interval whenever successive data bits transition between logic states. The first and second portions are generated with circuitry arranged such that V2 is maximized by reducing the buffer's output impedance. The fourth portion is generated with circuitry which has a non-zero output impedance preferably equal to the transmission line's characteristic impedance, to absorb transitions reflected back to the source circuitry by the capacitive termination.

Method and apparatus for sampling a high-speed digital signal include providing a data signal to a differential data input circuit, an offset control signal, and a strobe pulse. In response to the strobe pulse, the data signal is resolved into an output logic state based to a relatively greater extent on the differential data signal and to a relatively lesser extent on the offset control signal.

A method an apparatus for providing channel state information in a receiver are described. In the method, direct channel state information may be generated based on a calculated error signal, and indirect channel state information may be generated based on a magnitude of a channel frequency response. A channel state selection control signal is generated based on the calculated error signal and magnitude of the channel frequency response. One of the direct channel state information and indirect channel state information may be output based on a logic state of the channel state selection control signal.

A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.

Apparatus and methods sense or measure an input current, such as a current indicating a logic state of a memory cell. A sensing circuit includes an amplifier, a capacitor, a current source circuit, a clocked comparator and a clocked counter. The current source circuit operates responsive to an output of the comparator to supply or withdraw current to and from the capacitor during respective charging and discharging intervals. The count in the clocked counter results from periodic comparisons of the capacitor voltage with a reference voltage and is, therefore, related to the logic state of the memory cell. The magnitude of current supplied during charging is less than the magnitude withdrawn during discharging, allowing use of a smaller counter.