Method for a memory including a first, second, third and fourth cells include applying a read, program, or erase
voltage, the first and second cells coupled to a first top interconnect, the third and fourth cells coupled to a second top interconnect, the first and third cells coupled to a first bottom interconnect, the second and fourth cells are to a second bottom interconnect, each
cell includes a switching material overlying a non-
linear element (NLE), the
resistive switching material is associated with a first conductive
threshold voltage, the NLE is associated with a lower, second conductive
threshold voltage, comprising applying the read
voltage between the first top and the first bottom
electrode to switch the NLE of the first
cell to conductive, while the NLEs of the second, third, and the fourth cells remain non-conductive, and detecting a read current across the first
cell in response to the read
voltage.