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370 results about "Linear element" patented technology
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In an electric circuit, a linear element is an electrical element with a linear relationship between input current and output voltage. Resistors are the most common example of a linear element; other examples include capacitors, inductors, and transformers. Fundamentally nonlinear devices like transistors are often used to build approximately linear circuits. For example, an op-amp is designed to behave like a linear amplifier, as long as its input voltages remain within certain limits.
Method for controlling electro-optic display
Owner:E INK CORPORATION
Processes for forming backplanes for electro-optic displays
A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.
Owner:E INK CORPORATION
Display device
InactiveUS20100065840A1Improve conductivityGuaranteed uptimeTransistorSolid-state devicesJunction leakageLinear element
A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS20100065839A1Suitable structureAvoid defectsSolid-state devicesNon-linear opticsJunction leakageLinear element
A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Method for controlling electro-optic display
An electro-optic display comprises a bistable electro-optic medium, a plurality of pixel electrodes, with associated non-linear elements, and a common electrode, disposed on opposed sides of the electro-optic medium. The display has a writing mode, in which at least two different voltages are applied to different pixel electrodes, and a non-writing mode in which the voltages applied to the pixel electrodes are controlled so that any image previously written on the electro-optic medium is substantially maintained. The display is arranged to apply to the common electrode a first voltage when the display is in its writing mode and a second voltage, different from the first voltage, when the display is in its non-writing mode.
Owner:E INK CORPORATION
Linear quadrupole mass spectrometer
InactiveUS6403955B1Minimize feedbackLarge useful ion trapping volumeStability-of-path spectrometersSpectrometer detectorsTrappingLinear element
A quadrupole ion trap mass analyzer in which the trapping volume is defined by spaced linear rods in which linear elements located between the spaced linear rods produce image currents produced by motion of ions in the trapping volume.
Owner:THERMO FINNIGAN
System and method for computing parameters for a digital predistorter
ActiveUS20080130788A1Effective linearizationPower amplifiersMemory effect compensationComputational scienceLinear element
Digital predistortion system, methods and circuitry for adapting a predistortion system linearizing a non-linear element. The system is a multiply partitioned architecture that addresses long or “memory” effects, and separately addresses shorter duration effects. In a preferred method, the non-linear element is first modeled in software as a nonlinearity and a linearity in cascade form, preferably a Wiener model. The model is validated and adapted to minimize an observed error between the model and the non-linear element. The software model of the non-linear element is then used first to model a predistortion block that addresses short duration effects, and second to separately model a predistortion block that addresses longer duration effects. The models are software executable by an external processor in real time. Periodically the models are executed and used to update the adaptive parameters of the predistortion system without interrupting the system operation.
Owner:TEXAS INSTR INC
System and methods for digitally correcting a non-linear element using a digital filter for predistortion
ActiveUS20080130789A1Effective linearizationPower amplifiersMemory effect compensationEngineeringNonlinear element
System and methods for a digital linearization of a non linear element. Digital predistortion methods and circuitry for linearizing a non-linear element that address long or “memory” effects and shorter duration effects, these two predistortion functions are operated together in an adaptive fashion with the non-linear element to provide a highly linear system. A short duration predistortion block comprises an Nth order polynomial filter coupled to a programmable linear equalizer. The Nth order filter includes programmable non-linearities and variable delay taps. The Nth order filter may be configured to implement a non-sequential or a sequential ordered polynomial. The equalizer may, in a preferred embodiment, include circuitry for equalizing imbalances between real and complex signal values. The Nth order filter may implement a compound Volterra filter. The combined system of the predistortion circuitry and a non-linear element has a linear input-output signal response. Methods for initializing, parameterizing and adapting the system are disclosed.
Owner:TEXAS INSTR INC
Transmitter linearization using fast predistortion
InactiveUS6741662B1Amplifier modifications to reduce non-linear distortionAmplifier modifications to reduce noise influenceLinear elementEngineering
A method of generating values of a predistortion look up table for linearization of a transmitter. The method includes accumulating a plurality of pairs of values representing input and output values of samples entering one or more non-linear elements of the transmitter, fitting the pairs of values into a parameteric model of at least one of the one or more non-linear elements, so as to determine values for the parameters of the parameteric model, and generating values of the look up table responsive to the fitted parameteric model.
Owner:INTEL CORP
Display device
InactiveUS20100072470A1Improve conductivityGuaranteed uptimeTransistorSolid-state devicesJunction leakageLinear element
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
Display device
ActiveUS20100072471A1Improve conductivityGuaranteed uptimeTransistorElectroluminescent light sourcesJunction leakageLinear element
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Structure for rigidly connecting solar panels to a fixture
InactiveUS20110302859A1Reduce water penetrationImprove sealingPhotovoltaic supportsSolar heating energyRoof pitchLinear element
A device for integrating solar panels on a fixture, in particular a roofing framework, that includes a plurality of frames intended to accommodate the solar panels, added to the fixture, said frames being defined by a peripheral edge fitted with linear elements that project relative to the plane in which the frames are set; tightening means for holding said panels on the frames; and means for securing the frames to the fixture. The frames are openwork and cover or partially overlap each other on the edges which define them, laterally on the one hand and in the direction of the roof pitch on the other hand, the projecting linear elements with which they are fitted cooperating with each other to form a barrier seal.
Owner:INSTITUT DE RECH FONDAMENTALE & TECH SOLAIRES - IRFTS
Distortion suppression in high-level capable audio amplification circuit
ActiveUS20120121106A1Enhances small signal transfer function matchingEasy to controlGain controlSemiconductor electrostatic transducersAudio power amplifierLinear element
The present invention relates to an audio amplification circuit comprising a first preamplifier for receipt of an audio input signal and a second preamplifier comprising a first differential input for receipt of an attenuated audio input signal. The attenuated audio input signal is generated by an attenuator coupled to the audio input signal. A non-linear element is coupled to a first input of the first preamplifier thereby distorting the audio input signal at the first input at large signal levels. A distortion compensation network is adapted to supply a distortion compensation signal from the first input of the first preamplifier to a second differential input of the second preamplifier such that distortion in the output signal of the second preamplifier is cancelled or attenuated. The invention further relates to a corresponding method of compensating an audio amplification circuit for distortion induced by a non-linear element.
Owner:INVENSENSE
Display device
ActiveUS8368066B2High field-effect mobilitySimple manufacturing processTransistorSolid-state devicesLinear elementScan line
A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS20100084654A1Small sizeReduce contact resistanceTransistorSolid-state devicesScan lineLinear element
In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS7989815B2High field-effect mobilitySimple manufacturing processTransistorElectroluminescent light sourcesScan lineLinear element
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Switching device having a non-linear element
ActiveUS20120305879A1High densityFast switching speedSolid-state devicesCode conversionLinear elementNonlinear element
A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.
Owner:CROSSBAR INC
Non-linear element, display device including non-linear element, and electronic device including display device
ActiveUS20110127526A1Improve voltage characteristicsMake up bulkyTransistorSolid-state devicesHydrogen concentrationElectricity
A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×1019 / cm3 or lower, a work function φms of a source electrode in contact with the oxide semiconductor, a work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd, and an area of contact between the drain electrode and the oxide semiconductor is larger than an area of contact between the source electrode and the oxide semiconductor. By electrically connecting a gate electrode and the drain electrode in the transistor, a non-linear element having a favorable rectification property can be achieved.
Owner:SEMICON ENERGY LAB CO LTD
Switching device having a non-linear element
ActiveUS8502185B2High densityFast switching speedTransistorSolid-state devicesLinear elementNonlinear element
A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.
Owner:CROSSBAR INC
Fill material for direct-contact heat/mass exchangers
InactiveUS20150048528A1Reduced dysfunctionSmall sizeAdditive manufacturing apparatusUsing liquid separation agentFilling materialsLinear element
Fill material for a direct contact heat exchanger wherein the fill material has flow pathways bounded by an array of linear elements, namely a mesh. The invention intentionally uses surface tension and capillary action to anchor the fluid / fluid interface in a desired location. The heat exchanger is wick or collector in direct contact with the fill material (matrix) to extract fluid without formation of large droplets. The mesh is made from a neutrally wetting material.
Owner:BARTON SEAN ANDERSON
Processes for forming backplanes for electro-optic displays
A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.
Owner:E INK CORPORATION
Method and apparatus for radiance capture by multiplexing in the frequency domain
An external mask-based radiance camera may be based on an external, non-refractive mask located in front of the main camera lens. The mask modulates, but does not refract, light. The camera multiplexes radiance in the frequency domain by optically mixing different spatial and angular frequency components of light. The mask may, for example, be a mesh of opaque linear elements, which collectively form a grid, an opaque medium with transparent openings, such as circles, or a pinhole mask. Other types of masks may be used. Light may be modulated by the mask and received at the main lens of a camera. The main lens may be focused on a plane between the mask and the main lens. The received light is refracted by the main lens onto a photosensor of the camera. The photosensor may capture the received light to generate a radiance image of the scene.
Owner:ADOBE SYST INC
Display device
ActiveUS20100084652A1Small sizeReduced footprintSolid-state devicesNon-linear opticsScan lineLinear element
A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Adaptive high-order nonlinear function approximation using time-domain volterra series to provide flexible high performance digital pre-distortion
ActiveUS20150381220A1Secret communicationTransmitter/receiver shaping networksTime domainLinear element
A method is described for predistorting an input signal to compensate for non-linearities caused to the input signal in producing an output signal. The method comprises: providing an input for receiving a first input signal as a plurality of signal samples, x[n], to be transmitted over a non-linear element; providing at least one digital predistortion block comprising, a plurality of IQ predistorter cells coupled to the input, each comprising a lookup table (LUT) for generating an LUT output The at least one digital predistortion block block is configured to apply interpolation between LUT entries for the, plurality of LUTs; and generate an output signal, y[n], by each of the plurality of IQ predistorter cells by adaptively modifying the first input signal using interpolated LUT entries to compensate for distortion effects in the non-linear element. A combiner may be provided configured to combine the output signal samples, yQ, from the plurality of IQ predistorter cells into a combined signal to generate the output signal, y[n], for transmission to the non-linear element. An error calculation block may be coupled to a digital predistortion adaptation block to determine and modify a predistortion performance.
Owner:NXP USA INC
IQ mismatch cancellation
A method of assigning values to parameters for IQ mismatch cancellation. The method includes providing values to a processing path of a communication device, passing the provided values through an IQ modulator, at least one non-linear element and an IQ demodulator, to produce distorted values, and estimating at least one parameter for cancellation of IQ mismatch effects of the communication device responsive to the provided values and to the distorted values.
Owner:INTEL CORP
Light emitting diode device
A light emitting diode device includes a light emitting diode and a non-linear element which are arranged on a substrate. The non-linear element is composed of an organic compound layer.
Owner:CANON KK
Dynamically configurable logic gate using a non-linear element
ActiveUS7453285B2Reduce power consumptionLess componentsElectric pulse generatorLogic circuits using elementary logic circuit componentsControl signalLinear element
A dynamically configurable logic gate includes an input summer for receiving a first input signal and a second input signal to generate a summed input signal. Further the dynamically configurable logic gate includes a nonlinear element that applies a nonlinear function to the summed input signal to produce a nonlinear output signal. The dynamically configurable logic gate output signal corresponds to one of a plurality of different logic gates responsive to adjusting the summed input signal and / or the nonlinear function. In another embodiment, the dynamically configurable logic gate includes feedback to one of the inputs. The dynamically configurable logic gate receives the two inputs and operates as one of a plurality of different logic gate types so as to produce an output signal that corresponds to a memory latch according to a selection of the control signal. An array structure of dynamically configurable logic elements is also disclosed.
Owner:CHAOLOGIX INC
Adaptive high-order nonlinear function approximation using time-domain volterra series to provide flexible high performance digital pre-distortion
ActiveUS9628119B2Secret communicationTransmitter/receiver shaping networksEngineeringNonlinear element
Owner:NXP USA INC
Semiconductor device, power diode, and rectifier
ActiveUS20120061662A1Improve pressure resistanceLower average currentSemiconductor devicesPower semiconductor devicePower flow
An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
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