30results about How to "Improve voltage characteristics" patented technology

A separator for an energy storage cell having a microporous matrix including a reversible porosity-controlling agent. The porosity-controlling agent is selected from the group consisting of agents that change size as a function of temperature, agents that change size as a function of electrolyte concentration, and agents that change size as a function of temperature and electrolyte concentration to provide a change in an overall porosity of the separator.

A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995≦m≦1.030, 0.1≦a≦2.0, 0.1≦b≦3.0, and 0.1≦c≦5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic. Consequently, a dielectric ceramic having a good AC voltage characteristic, maintaining a desired large dielectric constant and a good temperature characteristic, exhibiting a small dielectric loss, and being capable of ensuring the reliability and a monolithic ceramic capacitor including the dielectric ceramic are realized.

A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96≦m≦1.030, 0.05≦a≦3, 0.1≦b≦1.5, 0.1≦c≦1.0, 0.1≦d≦1.5, and 0.05≦e≦3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

A fuel cell is provided which can enhance the CO resistance to thereby improve the voltage characteristics thereof. A fuel cell includes an electrolyte layer, a first electrode provided on one surface of the electrolyte layer, and a second electrode provided on the other surface of the electrolyte layer. In this fuel cell, a reaction fluid to be supplied to the first electrode contains carbon monoxide or carbon monoxide is generated from a reaction fluid having been supplied to the first electrode. The first electrode of the fuel cell includes a first catalyst material (Pt) having a function of extracting an electron from the reaction fluid, a second catalyst material (WAu) having a function of reducing the activation energy for conversion of carbon monoxide to carbon dioxide, and an oxygen-supplying material (Ru) supplying oxygen.

A reference voltage generator for improving setup voltage characteristics without an increase in a standby current and a method of controlling the same, in which the reference voltage generator includes: a reference voltage generation unit including a resistor connected between a power supply voltage and an output node, for dividing the power voltage, and generating a reference voltage fed to the output node thereof; a voltage detector receiving a feedback of the reference voltage and detecting a level of the reference voltage; and a bypass circuit connected in parallel to the resistor of the reference voltage generation unit and bypassing the resistor in response to an output signal of the voltage detector.

Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ≧50% relative to total voids; a V1 region having a void density of over 2×104 / cm3 and below 1×105 / cm3 is ≦20% of the total area of wafer; a V2 region having a void density of 5×102 to 2×104 / cm3 occupies ≧80% of the total area of the wafer; and bulk microdefect density is ≧5×108 / cm3.

The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.

There is provided a membrane electrode assembly including an anode gas diffusion layer included in an anode and a cathode gas diffusion layer included in a cathode, wherein the anode gas diffusion layer includes an anode gas diffusion substrate and an anode microporous layer disposed on a first surface of the anode gas diffusion substrate, wherein the cathode gas diffusion layer includes a cathode gas diffusion substrate and a cathode microporous layer disposed on a first surface of the cathode gas diffusion substrate, and wherein at least one of a strike-through ratio on a second surface of the anode gas diffusion substrate and a strike-through ratio on a second surface of the cathode gas diffusion substrate is larger than 0.2%.

The invention discloses a photovoltaic material. The molecular formula of the photovoltaic material is CuAl(1-y)Se(2-y)X2y, the photovoltaic material adopts an orthorhombic chalcopyrite-type structure similar to CuAlSe2, X substitutes the lattice positions of partial Al atoms and Se atoms, y is equal to 0.05-0.2, and X is a V-group element. The material can absorb both near-infrared sunlight and visible-band sunlight. When the novel material is taken as an absorbed layer to manufacture a photovoltaic device, the material has the high voltage characteristic of a wide band gap semiconductor and also has the high current characteristic of a narrow band gap material, so that the photovoltaic device has higher conversion efficiency. Moreover, the photovoltaic material does not contain indium and gallium, so that the cost is reduced.