30results about How to "Improve voltage characteristics" patented technology

The invention discloses carbon fluoride and a preparation method and application thereof. The carbon fluoride is made by fluorinating carbon powder through a chemical reaction method. The carbon powder comprises elements, by mass percentage, 80-95% of C, 0-20% of N, 0-5% of H and 0-10% of O. The preparation method includes: (1) putting carbon powder in a fluorination apparatus; and (2) vacuuming the fluorination apparatus, leading a fluorine source in, and performing a reaction at 400-700 DEG under the pressure of 100-500 kPa for 6-24h to obtain carbon fluoride. According to the method, carbon powder and a fluorine source with different contents react in a certain condition to prepare carbon fluoride. The preparation method is simple, and carbon fluoride with high voltage characteristic and stable structure can be obtained. When carbon fluoride is taken as a negative electrode material of a lithium battery, the discharge voltage platform of carbon fluoride is higher than that of commercial fluoridized graphite in the prior art, so that the carbon fluoride has bright market application prospects.

A separator for an energy storage cell having a microporous matrix including a reversible porosity-controlling agent. The porosity-controlling agent is selected from the group consisting of agents that change size as a function of temperature, agents that change size as a function of electrolyte concentration, and agents that change size as a function of temperature and electrolyte concentration to provide a change in an overall porosity of the separator.

A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995≦m≦1.030, 0.1≦a≦2.0, 0.1≦b≦3.0, and 0.1≦c≦5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic. Consequently, a dielectric ceramic having a good AC voltage characteristic, maintaining a desired large dielectric constant and a good temperature characteristic, exhibiting a small dielectric loss, and being capable of ensuring the reliability and a monolithic ceramic capacitor including the dielectric ceramic are realized.

A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96≦m≦1.030, 0.05≦a≦3, 0.1≦b≦1.5, 0.1≦c≦1.0, 0.1≦d≦1.5, and 0.05≦e≦3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×1019 / cm3 or lower, a work function φms of a source electrode in contact with the oxide semiconductor, a work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd, and an area of contact between the drain electrode and the oxide semiconductor is larger than an area of contact between the source electrode and the oxide semiconductor. By electrically connecting a gate electrode and the drain electrode in the transistor, a non-linear element having a favorable rectification property can be achieved.

The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.

A fuel cell is provided which can enhance the CO resistance to thereby improve the voltage characteristics thereof. A fuel cell includes an electrolyte layer, a first electrode provided on one surface of the electrolyte layer, and a second electrode provided on the other surface of the electrolyte layer. In this fuel cell, a reaction fluid to be supplied to the first electrode contains carbon monoxide or carbon monoxide is generated from a reaction fluid having been supplied to the first electrode. The first electrode of the fuel cell includes a first catalyst material (Pt) having a function of extracting an electron from the reaction fluid, a second catalyst material (WAu) having a function of reducing the activation energy for conversion of carbon monoxide to carbon dioxide, and an oxygen-supplying material (Ru) supplying oxygen.

A reference voltage generator for improving setup voltage characteristics without an increase in a standby current and a method of controlling the same, in which the reference voltage generator includes: a reference voltage generation unit including a resistor connected between a power supply voltage and an output node, for dividing the power voltage, and generating a reference voltage fed to the output node thereof; a voltage detector receiving a feedback of the reference voltage and detecting a level of the reference voltage; and a bypass circuit connected in parallel to the resistor of the reference voltage generation unit and bypassing the resistor in response to an output signal of the voltage detector.

Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ≧50% relative to total voids; a V1 region having a void density of over 2×104 / cm3 and below 1×105 / cm3 is ≦20% of the total area of wafer; a V2 region having a void density of 5×102 to 2×104 / cm3 occupies ≧80% of the total area of the wafer; and bulk microdefect density is ≧5×108 / cm3.

A fuel cell is provided which can enhance the CO resistance to thereby improve the voltage characteristics thereof. A fuel cell includes an electrolyte layer, a first electrode provided on one surface of the electrolyte layer, and a second electrode provided on the other surface of the electrolyte layer. In this fuel cell, a reaction fluid to be supplied to the first electrode contains carbon monoxide or carbon monoxide is generated from a reaction fluid having been supplied to the first electrode. The first electrode of the fuel cell includes a first catalyst material (Pt) having a function of extracting an electron from the reaction fluid, a second catalyst material (WAu) having a function of reducing the activation energy for conversion of carbon monoxide to carbon dioxide, and an oxygen-supplying material (Ru) supplying oxygen.

An ink nozzle and making method and ink jet type recorder comprises a plurality of actuator blocks having a vibration plate, a common electrode, a piezoelectric element, and a separate electrode, are produced, and the plurality of actuator blocks are transferred onto a single pressure chamber plate. The actuator blocks are arranged in a zigzag pattern so that adjacent actuator blocks are spaced apart from each other in the scanning direction while partially overlapping with each other with respect to the head width direction.

The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.

There is provided a membrane electrode assembly including an anode gas diffusion layer included in an anode and a cathode gas diffusion layer included in a cathode, wherein the anode gas diffusion layer includes an anode gas diffusion substrate and an anode microporous layer disposed on a first surface of the anode gas diffusion substrate, wherein the cathode gas diffusion layer includes a cathode gas diffusion substrate and a cathode microporous layer disposed on a first surface of the cathode gas diffusion substrate, and wherein at least one of a strike-through ratio on a second surface of the anode gas diffusion substrate and a strike-through ratio on a second surface of the cathode gas diffusion substrate is larger than 0.2%.

The invention discloses a photovoltaic material. The molecular formula of the photovoltaic material is CuAl(1-y)Se(2-y)X2y, the photovoltaic material adopts an orthorhombic chalcopyrite-type structure similar to CuAlSe2, X substitutes the lattice positions of partial Al atoms and Se atoms, y is equal to 0.05-0.2, and X is a V-group element. The material can absorb both near-infrared sunlight and visible-band sunlight. When the novel material is taken as an absorbed layer to manufacture a photovoltaic device, the material has the high voltage characteristic of a wide band gap semiconductor and also has the high current characteristic of a narrow band gap material, so that the photovoltaic device has higher conversion efficiency. Moreover, the photovoltaic material does not contain indium and gallium, so that the cost is reduced.

The invention discloses a photovoltaic material. The molecular formula of the photovoltaic material is CuAl(1-y)Se(2-y)X2y, the photovoltaic material adopts an orthorhombic chalcopyrite-type structure similar to CuAlSe2, X substitutes the lattice positions of partial Al atoms and Se atoms, y is equal to 0.05-0.2, and X is a V-group element. The material can absorb both near-infrared sunlight and visible-band sunlight. When the novel material is taken as an absorbed layer to manufacture a photovoltaic device, the material has the high voltage characteristic of a wide band gap semiconductor and also has the high current characteristic of a narrow band gap material, so that the photovoltaic device has higher conversion efficiency. Moreover, the photovoltaic material does not contain indium and gallium, so that the cost is reduced.

The present invention discloses a device and a method for raising the loading transient voltage of a zinc-silver reserve battery and relates to the technical field of reserve batteries and storage batteries. The device comprises a battery pack (1) formed by connecting a plurality of zinc-silver reserve battery single bodies in series and is characterized by further comprising an activation circuit and a current-limiting resistor (4), wherein the activation circuit is formed by connecting an activation power supply (2) and a time relay (3) in parallel; the activation circuit is connected in series with the current-limiting resistor (4) to form a series circuit; and the battery pack (1) and the series circuit are connected in parallel with each other. According to the technical scheme, the device can be used for effectively raising the loading transient voltage of the zinc-silver reserve battery, in particular to the loading transient voltage after dry storage. The technical scheme can be also applied to other reserve battery systems with the problem of voltage delay but is not limited to the zinc-silver reserve batteries.