The invention discloses a preparation method of a P-type
crystal silicon double-sided
cell. The preparation method comprises the following steps of felting and
chemical cleaning, PN
junction formation, antireflection film deposition performed on two sides, film splitting performed on a back surface,
cell positive and negative pole preparation and
sintering. Compared with the prior art, and according to the preparation method of the P-type
crystal silicon double-sided
cell of the invention, only one-time
doping is required, and therefore, a preparation process can be simpler; and original processes such as frequent high-temperature
doping and
mask manufacture can be avoided, and therefore, preparation steps can be simplified, and preparation cost can be saved. The double-sided cell prepared by using the preparation method provided by the technical schemes of the invention can fully utilize
scattered light of
sunlight on the ground, and therefore, the
utilization rate of the
sunlight can be improved, power generation amount of the cell can be increased.