263results about How to "Increase capacitance density" patented technology

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

An electric double layer capacitor includes, contained in a casing, an electrolyte, a positive electrode and a negative electrode each being an electrode containing carbon black, to form an electric double layer at the interface with the electrolyte, and a separator interposed between the positive electrode and the negative electrode. At least one electrode of the positive electrode and the negative electrode has protruded portions or bent portions formed continuously in the height direction against the bottom face of the casing. Further, a space due to the height of the protruded portions or the bent portions is formed between the at least one electrode and the separator.

An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.

A capacitor including a first and second component capacitor structure disposed on a substrate. A component capacitor structure includes an upright arm, a transverse arm, and a via. The upright arm has a top end and a bottom end that extend at substantially right angles to a central axis of the upright arm. The transverse arm has a left and right end that extend at substantially right angles to a central axis of the transverse arm. The upright arm and the transverse arm intersect to form a cross-like pattern and the top, bottom, left and right ends all extend in the same rotary direction. The via is electrically coupled to an area of intersection of the upright and transverse arms.

A flip-chip packaging process is disclosed. The present invention is featured in forming a copper pillar on a wafer, forming a solder on a substrate; and enabling the solder to substantially cover the entire externally-exposed surface of the copper pillar, thereby connecting the copper pillar to the substrate. The copper pillar of the present invention can be such as a prism or a cylinder.

Control circuitry handles inrush current, and may provide under voltage and / or over voltage monitoring and handling, as well as remote enable handling. The circuitry may advantageously employ a sense capacitor in parallel with an input capacitor (e.g., bulk input filter capacitor), and a current mirror to produce a signal proportional to input current. A clamp circuit may control a series pass device to regulate current in response to the proportional signal, or to interrupt current flow in response to an under voltage or over voltage condition or receipt of a signal indicative of a disable state. An enable signal may be summed into a comparator that handles under voltage condition determination.

A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.

An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane and the fingers thereof extend toward the second mirror plane. The linear plate is located at the second mirror plane and connected to one finger of the combs of the second electrode. The first and second mirror planes are orthogonal. The fingers of the combs of the first and second electrodes are interdigitized.

An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane and the fingers thereof extend toward the second mirror plane. The linear plate is located at the second mirror plane and connected to one finger of the combs of the second electrode. The first and second mirror planes are orthogonal. The fingers of the combs of the first and second electrodes are interdigitized.

An organic / inorganic oxide mixture has high capacitance density so as to realize a capacitor material that can be self-contained in a substrate. The mixture film made of inorganic oxide particle has a mean particle size of less than 90 nm dispersed in organic polymer, of which relative dielectric constant is more than 10 and thickness is less than 900 nm.

A Metal Insulator-Metal (MIM) capacitor is formed on a semiconductor substrate with a base comprising a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. An ancillary MIM capacitor plate is selected either a lower electrode formed on the STI region in the semiconductor substrate or a doped well formed in the top surface of the semiconductor substrate. A capacitor HiK dielectric layer is formed on or above the MIM capacitor lower plate. A second MIM capacitor plate is formed on the HiK dielectric layer above the MIM capacitor lower plate.

The invention discloses a plate capacitor and polymer-matrix composite dielectric material which can be filled with reactive nano particles, belonging to the technical field of the electronic materialand the electronic component. The reactive nano particles are conductive nano particles in core shell structures, the surface of each conductive nano particle is coated with a layer of insulating coating, and the surface of the insulating coating can carry reactive functional groups. The nano particles can be organically combined with polymer through the reactive functional groups and can be evenly dispersed in the matrix of the polymer. The polymer-matrix composite dielectric material which can be filled with the conductive nano particles can be used as the dielectric layer and flexible foilsheets can be used the upper electrode and the lower electrode of the plate capacitor.

A capacitor structure is fabricated by forming a pattern of first dielectrics over a foil, forming first electrodes over the first dielectrics, and co-firing the first dielectrics and the first electrodes. Co-firing of the dielectrics and the electrodes alleviates cracking caused by differences in thermal coefficient of expansion (TCE) between the electrodes and the dielectrics. Co-firing also ensures a strong bond between the dielectrics and the electrodes. In addition, co-firing allows multi-layer capacitor structures to be constructed, and allows the capacitor electrodes to be formed from copper.

A three-dimensional integrated capacitance structure comprises at least two arrays of “unit cells” on respective layers of an IC, with each unit cell comprising a center conductor and a conducting ring which surrounds the center conductor. Each array comprises a plurality of unit cells, tiled on a given IC layer at a predetermined pitch. The arrays are arranged vertically such that adjacent vertical arrays are offset in the x and y dimensions by a predetermined fraction—preferably ½—of the unit cells' pitch. The structure includes vias arranged to interconnect the arrays such that each center conductor is connected to a conducting ring of the array immediately above and / or below the center conductor, and such that each conducting ring is connected to a center conductor of the array immediately above and / or below the conducting ring.

A capacitor element includes a pair of conductive layer, a plurality of first electrodes and second electrodes, and insulation caps for insulating these electrodes from the conductive layers. By anodizing a metal substrate in two stages, holes filled with the first electrodes and holes filled with the second electrodes are randomly distributed

A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

A micro electro-mechanical system (MEMS) variable capacitor is described, wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate and are independently actuated. The electrodes are formed in an interdigitated fashion to maximize capacitance. The MEMS variable capacitor includes CMOS manufacturing steps in combination with elastomeric material selectively used in areas under greatest stress to ensure that the varactor will not fail as a result of stresses that may result in the separation of dielectric material from the conductive elements. The combination of a CMOS process with the conducting elastomeric material between vias increases the overall sidewall area, which provides increased capacitance density.

The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance film, a fabricated upper electrode, and a third metal interconnect. The MIM capacitor is realized by forming an interlayer dielectric film comprising silicon oxide so as to cover the first metal interconnect, then forming a first opening in the interlayer dielectric film to a region corresponding to a via hole layer in the interlayer dielectric film just above the first metal interconnect so as not to expose the upper surface of the first metal interconnect, then forming a second opening to the inside of the first opening so as to expose the surface of the first metal interconnect and then forming a capacitance film and a third metal interconnect.

A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielectric using the same process as the other interconnects on that level of the back end (preferably dual damascene). Some versions of the capacitors have perforations in the plates and vertical conductive members connecting all plates of the same polarity, thereby increasing reliability, saving space and increasing the capacitive density compared with solid plates.

An electronic assembly (98) includes a substrate (20), a capacitor having first and second conductors (38,54) formed over the substrate, a first set of conductive members (76) formed over the substrate and being electrically connected to the first conductor of the capacitor, and a second set of conductive members (78) formed over the substrate and being electrically connected to the second conductor of the capacitor.

The invention discloses an energy saving system of an elevator. In the system, a super capacitor group is utilized as a regenerative braking energy storage device of an elevator sub-system and a power supply source for operating the elevator sub-system, energy is stored in the braking process of operating the elevator sub-system, a power source switching control circuit is controlled by a system controller to realize the switching between the super capacitor group and an external alternating current network for supplying the electricity to the elevator sub-system so as to achieve the purpose of saving energy. The system fully utilizes the characteristics of heavy current discharge of a super capacitor, lowers the requirements on the level of the external alternating current network and can synchronously satisfy a peak value power generated when the elevator sub-system is operated, and the super capacitor presents the advantages of long service life, short charging and discharging time, large capacitance density and the like. The system saves energy and synchronously improves the safety of the elevator operation and has very high social benefit and economic benefit.

Disclosed is a polyradical compound which can be used as an electrode active material for at least one of a positive electrode and a negative electrode. The polyradical compound has a repeating unit represented by general formula (1) and is crosslinked using a bifunctional crosslinking agent having two polymerizing groups in the molecule represented by general formula (2), wherein R1 to R3 each independently represent hydrogen or methyl group; R4 to R7 each independently represent C1 to C3 alkyl group; X represents single bond, linear, branched or cyclic C1 to C15 alkylenedioxy group, alkylene group, phenylenedioxy group, phenylene group or structure represented by general formula (3); and R8 to R13 each independently represent hydrogen or methyl group, and k represents an integer of 2 to 5.

The invention relates to a vertical-type capacitor structure and a manufacturing method of the vertical-type capacitor structure, and belongs to the technical field of micro-electronic passive devices. The vertical-type capacitor structure structurally and specifically comprises a deep-groove structure, insulating layers, conducting layers and a dielectric layer, wherein the deep-groove structure is located inside a wafer substrate, the insulating layers and the conducting layers are sequentially deposited on the inner side wall of a deep groove, and the dielectric layer is filled between the conducting layers. The insulating layers, the conducting layers, the dielectric layer and the deep groove are the same in height. On the basis of the principle that the area of a capacitor is expanded in the direction perpendicular to the substrate, the area of an plate electrode in the perpendicular direction is utilized, the processes such as sputtering and electroplating are adopted to manufacture a metal plate electrode, and the plate electrode is made of low electrical resistivity materials, like metal. With the combination of a silicon through hole technology, the vertical-type capacitor with a large depth-to-width ratio is achieved. With the combination of a substrate back thinning technology, the vertical-type capacitor structure penetrates through the substrate, the vertical-type capacitor structure can be used as a high-frequency channel between multi-layer chips, the area of the plate can be greatly saved, and the integration level of an integrated circuit is improved.

The invention discloses a linear secure high-energy-density supercapacitor and a preparation method thereof. The method comprises the following steps of 1) respectively taking two conducting fibers which are in core-shell structures as the anode and the cathode of the linear supercapacitor and twisting the two conducting fibers together to form the intertwisted anode and cathode; 2) coating gel electrolyte onto the surface of the anode and cathode and curing the gel electrolyte to form a gel electrolyte layer; 3) connecting the intertwisted anode and cathode coated with the gel electrolyte layer with lead wires respectively through conductive adhesive bonding or tin scolding methods. The preparation method is simple and is low in cost, strong in applicability, and suitable for large-scale industrial production. The produced linear supercapacitor is characterized by lightweight, security, high energy density, good flexibility, intertwining capability, and the like. The produced linear supercapacitor is applicable to flexible energy storage devices, lightweight portable electronic devices, military-use electronic clothes, and other fields.

Disclosed are embodiments of a capacitor with inter-digitated vertical plates and a method of forming the capacitor such that the effective gap distance between plates is reduced. This gap width reduction significantly increases the capacitance density of the capacitor. Gap width reduction is accomplished during back end of the line processing by masking connecting points with nodes, by etching the dielectric material from between the vertical plates and by etching a sacrificial material from below the vertical plates. Etching of the dielectric material from between the plates forms air gaps and various techniques can be used to cause the plates to collapse in on these air gaps, once the sacrificial material is removed. Any remaining air gaps can be filled by depositing a second dielectric material (e.g., a high k dielectric), which will further increase the capacitance density and will encapsulate the capacitor in order to make the reduced distance between the vertical plates permanent.

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

The invention provides a carbon nanotube / graphene composite gel. In the carbon nanotube / graphene composite gel, carbon nanotubes are inserted into the graphene gel to form three-dimensional porous structure, thereby contributing to prevention of graphene interlayer agglomeration, increasing surface area, and improving the electrochemical performance of the carbon nanotube / graphene composite gel. A method for preparing the carbon nanotube / graphene composite gel comprises adding carbon nanotubes to a graphene oxide aqueous solution and dispersing the carbon nanotubes uniformly by a hydrothermal method; obtaining the carbon nanotube / graphene oxide composite gel by using thermal treatment; and obtaining the carbon nanotube / graphene composite gel by using reducing, cleaning, and drying methods. An experiment testifies that the carbon nanotube / graphene composite gel has higher conductivity than graphene gel and can be used as an electrode material. Used as the electrode material of a super capacitor, the carbon nanotube / graphene composite gel increases the specific capacitance and the power density of the super capacitor.