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50results about How to "Extended working voltage range" patented technology
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Metal-insulator-metal capacitor structure having low voltage dependence
InactiveUS20070152295A1Extended working voltage rangeIncrease capacitance densityTransistorSemiconductor/solid-state device detailsCapacitanceLow voltage
A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.
Owner:TAIWAN SEMICON MFG CO LTD
Reference voltage generation circuit
ActiveCN103092253AReduce power consumptionExtended working voltage rangeElectric variable regulationVoltage referenceVoltage range
Provided is a reference voltage generation circuit. The reference voltage generation circuit comprises a current mirror unit, a first resistance, a second resistance and a temperature coefficient compensation unit. The temperature coefficient compensation unit comprises a first N-channel metal oxide semiconductor (NMOS) tube, a second NMOS tube and a third NMOS tube. A grid electrode and a drain electrode of the first NMOS tube are connected with each other, and are connected with a second end of the first resistance, and a source electrode of the first NMOS tube is connected with the ground. A grid electrode and a drain electrode of the second NMOS tube are connected with each other, and are connected with a first node of the current mirror unit, and a source electrode of the second NMOS tube is connected with the ground. A grid electrode and a drain electrode of the third NMOS tube are connected with each other, and are connected with a second end of the second resistance, and a source electrode of the third NMOS tube is connected with the ground. The first NMOS tube, the second NMOS tube and the third NMOS tube work in a subthreshold region or a saturation region. A first end of the first resistance is connected with a second node of the current mirror unit. A first end of the second resistance is connected with a third node of the current mirror unit. A work voltage range of the reference voltage generation circuit is wide, and energy consumption of the reference voltage generation circuit is low.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
High-efficiency intelligent high-side electronic load switch with wide voltage adaptability
ActiveCN104079276ARaise the voltage thresholdExtended working voltage rangeElectronic switchingInformation processingElectronic load
A high-efficiency intelligent high-side electronic load switch with wide voltage adaptability comprises a power supply module, a core control module, a self-boosting module, a voltage detection module, a current detection module and a switching module. The core control module is used for signal acquisition, information processing and storage and logic control; firstly, the core control module receives an external switch control input signal and detection signals output by the current detection module and the voltage detection module and processes and analyzes monitoring data according to an internally stored program to control the switching module to complete corresponding actions; secondly, the core control module provides a PWM control signal for the self-boosting module. The voltage detection module and the current detection module are used for detecting the real-time operating voltage and current of the switching module and transmitting data to the core control module for processing and analysis. The self-boosting module is used for providing a driving voltage for a switching tube in the switching module. The switching module is used for executing the on-off actions of a load. The high-efficiency intelligent high-side electronic load switch is wide in operating voltage range, high in operating frequency, high in efficiency, low in loss, safe, reliable and programmable.
Owner:LIUZHOU CHANGHONG MACHINE MFG
Electrode preparation method and battery
ActiveCN109841796AIncrease areal densityImprove structural stabilityElectrode manufacturing processesSecondary cellsLamellar crystalsInternal resistance
The invention discloses an electrode preparation method and a battery. The battery anode is prepared by pasting an electrode film prepared from an active substrate, a conductive agent and a binder toa current collector, the surface density of a pole piece is improved, the electrode capacity and the pole piece stability are improved, and the internal resistance is reduced. In the preparation process of the electrode film, lamellar crystals of the binder are stretched to paste the active substance and conductive agent, influence of expansion and contraction of the active substance caused by ionembedding and separating is reduced. The battery cathode is prepared by coating a slurry prepared from a pre-lithium active substance, a binder and a conductive agent on the current collector, the active substrate and conductive agent of the cathode are wetted rapidly, dispersed ultra-finely and homogeneous in a binder solution, the amount of the solvent for slurry dispersion is reduced, energy consumption for drying is reduced, the electrode process is shortened, and the load capacity of the cathode active substance is improved. The anode and cathode of the battery can be designed in an integrated way, and energy storage of the battery is improved. The electrode preparation method is simple, production and manufacture are realized by means of existing equipment, and the method is easy topopularize.
Owner:CHINA FIRST AUTOMOBILE
Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element
ActiveCN102495265AEliminate power lossExtended working voltage rangeCurrent/voltage measurementMOSFETHemt circuits
The invention discloses a current sampling circuit of a metal oxide semiconductor field effect transistor (MOSFET) switch element. A first end of the switch element is connected with a first input end of a sampling module and serves as a current input signal end, a second end of the switch element is connected with a second input end of the sampling module and serves as a current output signal end of the MOSFET switch element, and an output end of the sampling module serves as a sampling current output signal end. The sampling module directly samples voltage difference of the first end and the second end of the MOSFET switch element. Maximum voltage difference value allowed between the first input end and the second input end of the sampling module is a withstand voltage value between two input ends of the sampling module. A clamping module included in the sampling module increases the withstand voltage value of the sampling module so that a current path formed between the first input end and the second input end of the sampling module is blocked, and working voltage range of the current sampling circuit of the MOSFET switch element is improved.
Owner:HANGZHOU SILAN MICROELECTRONICS
Constant-transconductance rail-to-rail operational amplifier
ActiveCN107301308AExtended working voltage rangeImprove stabilityCAD circuit designDifferential amplifiersLoad circuitCapacitance
The invention relates to a constant-transconductance rail-to-rail operational amplifier. The constant-transconductance rail-to-rail operational amplifier comprises a rail-to-rail input stage, a gain stage and an output stage in sequential connection. The rail-to-rail input stage a PMOS (p-channel metal oxide semiconductor) differential pair, an NMOS (n-channel metal oxide semiconductor) differential pair, PMOS differential pair and NMOS differential pair tail current sources and an NMOS differential pair load circuit, and the PMOS differential pair and the NMOS differential pair are complementary. The gain stage comprises a self-bias cascade current mirror, and source electrodes of NMOS tubes and PMOS tubes of the PMOS differential pair and the NMOS differential pair are connected with the self-bias cascade current mirror. The output stage comprises a first PMOS tube, a first NMOS tube and a Miller compensator, the first PMOS tube and the first NMOS tube are in common-source connection, grid electrodes of the first PMOS tube and the first NMOS tube are connected with the self-bias cascade current mirror, and the Miller compensator is formed by series connection of a Miller compensation capacitor and a compensation resistor. The constant-transconductance rail-to-rail operational amplifier has advantages that input stage constant transconductance in a full voltage operating range can be guaranteed effectively, the whole circuit structure is high in stability, the operating voltage range of the operational amplifier is expanded, low-voltage application is realized, and the common-mode rejection ratio of the operational amplifier is increased.
Owner:SUZHOU KAIWEITE SEMICON
Hybrid super capacitor and manufacturing method thereof
InactiveCN104715934AExtended working voltage rangeIncrease energy valueHybrid capacitor electrolytesHybrid capacitor electrodesCapacitanceInternal resistance
The invention discloses a hybrid super capacitor and a manufacturing method thereof. According to the hybrid super capacitor and the manufacturing method thereof, a pseudo-capacitor mechanism and an electric double-layer capacitor mechanism are coordinately combined in an energy storage device, carbon materials are used as positive electrode electroactive materials, iron oxide materials are used as negative electrode electroactive materials, ionic liquid is used as electrolyte, and the hybrid super capacitor is assembled. The hybrid super capacitor has the double characteristics of an electric double-layer capacitor and a pseudo-capacitor and has the advantages of being high in charging and discharging speed, large in power density, small in internal resistance, long in cycle life and the like, and the hybrid super capacitor also has the advantages of being high in capacity, high in average voltage and large in energy density.
Molybdenum dioxide combined electrode and preparation method and application thereof
ActiveCN105355456AEvenly distributedReduce usageHybrid capacitor electrodesHybrid/EDL manufactureCapacitanceElectromotive force
The invention relates to a molybdenum dioxide combined electrode and a preparation method and applications thereof, and belongs to the technical field of electrochemistry. The method comprises the steps: preparing a mixed alkaline solution containing soluble molybdate and other types of metallic oxysalt; and forming a composite sedimentary deposit containing molybdenum dioxide and metal on the surface of a current collector of an electrode through electrochemical codeposition. In this way, a molybdenum dioxide combined electrode for a supercapacitor is obtained. The molybdenum dioxide combined electrode for a supercapacitor is obtained through electrochemical codeposition, one kind of metal is evenly distributed inside a molybdenum dioxide sedimentary deposit, the selected metal can exist stably without electrochemical corrosion within the working electromotive force range of molybdenum dioxide, and the metal exhibits high hydrogen over-electromotive force without affecting the charge and discharge efficiency of molybdenum dioxide. Therefore, the electronic conductivity and the electrochemical performance of the prepared electrode can be improved, and the electrode with the high specific capacitance characteristic can be obtained. The combined electrode is reasonable in structural design, is simple to prepare, can be prepared on a large scale, and can be applied to supercapacitors on a large scale.
Owner:CENT SOUTH UNIV
Finfet-based boosting supply voltage circuit and method
InactiveUS20150003174A1Improve performanceReduce circuit complexityDigital storageControl signalElectrical polarity
A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first transistor having a first polarity type and a second transistor having a second polarity type opposite the first transistor. The first transistor is a planar transistor, a source of the first transistor being connected with the voltage supply, and a gate of the first transistor receiving a control signal. The second transistor includes a gate formed in at least two planes. A source of the second transistor is connected with the voltage supply, a gate of the second transistor receives the control signal, and a drain of the second transistor is connected with a drain of the first transistor and forms an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.
Owner:IBM CORP
Compressed air microporous stirring device for surface treatment tank liquor
InactiveCN109680325APromote circulationNot prone to defects such as burningCellsAnodisationEngineeringPolymer
The invention belongs to the technical field of surface treatment of a part, and relates to a compressed air microporous stirring device for a surface treatment tank liquor, comprising an air inlet pipe, an air equalizing pipe, a microporous stirring pipe and a compressed air source; wherein the compressed air source communicates with the microporous stirring pipe through the air inlet pipe and the air equalizing pipe in sequence; the microporous stirring pipe is a PE polymer polyethylene microporous tube containing micron-sized pores. The invention provides a compressed air micropore stirringdevice for the surface treatment tank liquor, which has the advantages of constant tank liquor temperature, uniform concentration, good consistency between an anodized film layer and a plating layerfor surface treatment of parts and ability of preventing the heat of parts from being burnt effectively.
Owner:XIAN AERO ENGINE CONTROLS
Water system symmetrical electrochemical capacitor based on rice husk porous carbon
InactiveCN102709066AExtended working voltage rangeIncrease energy densityHybrid capacitor electrolytesElectrolytic capacitorsMass ratioPorous carbon
The invention belongs to the technical field of electrochemistry, and relates to a symmetrical electrochemical capacitor which uses a sulphate water system electrolyte and takes the rice husk porous carbon as an electrode material, and has the maximum working voltage of 1.6V-1.8V. The water system symmetrical electrochemical capacitor consists of a positive electrode, a negative electrode, a membrane, an electrolyte, a positive wire, a negative wire and a shell, wherein the active materials of the positive and the negative poles are rice husk porous carbon, and the electrolyte adopts one or the mixed liquor of sodium sulfate, potassium sulfate, lithium sulfate and other sulphate aqueous solutions. The mass ratio of the positive and the negative electrodes is (1:1)-(1.5:1). The sodium sulfate, potassium sulfate, lithium sulfate and other sulphate aqueous solutions are adopted as the electrolyte, compared with adopting sulfate and potassium hydroxide electrolytes, the maximum working voltage of the electrochemical capacitor can be increased to 1.6-1.8V from about 1V, so the energy density of the water system symmetrical electrochemical electrical double-layer capacitor is greatly increased, and moreover, good stability is obtained; and compared with the organic electrolyte, the symmetrical electrochemical capacitor has the characteristics of low prices, no toxicity, no pollution, simplicity in operation and the like.
Owner:JILIN UNIV
Metal-insulator-metal capacitor structure having low voltage dependence
InactiveUS7763923B2Extended working voltage rangeIncrease capacitance densityTransistorSemiconductor/solid-state device detailsCapacitanceLow voltage
A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.
Owner:TAIWAN SEMICON MFG CO LTD
Preparation method and application of polymer-based solid electrolyte
InactiveCN110828906ALess restraintPrevent crystallizationFinal product manufactureElectrolyte accumulators manufactureSolid state electrolytePolymer electrolytes
The invention provides a preparation method and application of a polymer-based solid electrolyte, and belongs to the technical field of preparation of lithium ion battery materials. An inorganic matter is added into an organic polymer solid electrolyte of a garnet system to regulate and control a polymer crystallization process, so that the morphology structure and crystallinity of the polymer electrolyte are improved, and the problem that the polarization current of the polymer electrolyte is increased under a high voltage is solved. The method is simple in process and low in cost. The cyclicvoltammetry current of the lithium ion battery assembled by adopting the polymer solid electrolyte can still be controlled at 0A when the potential is as high as 5V, i.e., the lithium ion battery based on the electrolyte disclosed by the invention can still work stably under a relatively high voltage.
Owner:四川贝克特瑞科技有限公司
Electromagnetic actuator mounted on high-pressure gas integrated cylinder valve
ActiveCN105822809APrevent abrupt changes in air pressureImprove air tightnessOperating means/releasing devices for valvesButt jointProduct gas
The invention relates to an electromagnetic actuator mounted on a high-pressure gas integrated cylinder valve. The electromagnetic actuator comprises a shell assembly, a pilot head assembly (1), an electromagnetic coil (4), an armature assembly (6) and an end cover (8). A gas flow channel is formed in the axial direction of the pilot head assembly (1). One end of the pilot head assembly (1) is used for being connected with the integrated cylinder valve in a butt joint mode, and the other end of the pilot head assembly (1) is movably connected with one end of the armature assembly (6). The other end of the armature assembly (6) is connected with one end of the end cover (8) through an elastic structure, and the other end of the end cover (8) is fixedly connected with the shell assembly. The electromagnetic coil (4) is wound outside the armature assembly (6) and the end cover (8), and the shell assembly wraps the pilot head assembly (1) and the electromagnetic coil (4). Compared with the prior art, the electromagnetic actuator has the advantages of being good in airtightness, controllability and stability, high in reliability and long in service life.
Owner:上海舜华新能源系统有限公司
E/D NMOS reference voltage source and low-dropout voltage regulator
PendingCN113126683AAvoid volatilityExtended working voltage rangeElectric variable regulationCapacitanceDropout voltage
The invention provides an E / D NMOS reference voltage source and a low-dropout voltage regulator. In the E / D NMOS reference voltage source, no matter how the external power supply voltage changes, the pre-reference output voltage can be stabilized to be a fixed value through the pre-reference source circuit based on the N-channel junction field effect transistor, the range of the pre-reference output voltage is wide, and the process is convenient to adjust; due to the fact that the pre-reference source circuit bears withstand voltage and initial voltage stabilization, the input voltage of the E / D NMOS reference source circuit is slightly changed by power supply voltage, the wide input voltage range and the power supply rejection ratio of the E / D NMOS reference source circuit are greatly improved, and the E / D NMOS reference source circuit has the E / D NMOS reference micro-power-consumption property at the same time. The E / D NMOS reference voltage source is simple and reasonable in circuit structure, a triode, a resistor, a capacitor and the like are not needed, the manufacturing process of the E / D NMOS reference voltage source is only based on the silicon gate P well E / D CMOS process, manufacturing of the N-channel junction field effect transistor is added, only the threshold voltage of the N-channel junction field effect transistor needs to be adjusted in the process, the process is greatly simplified, and cost is reduced.
Owner:NO 24 RES INST OF CETC
Liquid crystal pixel circuit of liquid crystal display panel and driving method thereof
ActiveUS20150277177A1Extended voltage rangeExtended working voltage rangeCathode-ray tube indicatorsNon-linear opticsLiquid-crystal displayCapacitor
A liquid crystal (LC) pixel circuit of a LC display panel includes a first, a second, a third and a fourth switches, a LC capacitor and a storage capacitor. A first and a control terminals of the first switch respectively receive a common voltage and a first gate signal. A first and a control terminals of the second switch respectively receive a data voltage and a second gate signal. The storage capacitor and the LC capacitor electrically connect between second terminals of the first and second switches. A first and a control terminals of the third switch respectively receive the common voltage and a third gate signal. A first and a control terminals of the fourth switch respectively receive a set voltage and a fourth gate signal. Second terminals of the third and the fourth switches respectively connect to the second terminals of the second and the first switches.
Owner:AU OPTRONICS CORP
Double-ion battery based on molybdenum selenide-graphite and preparation method thereof
ActiveCN110635112AExtended working voltage rangeImprove cycle stabilityGraphiteCell electrodesPhosphomolybdic acidHigh rate
The invention discloses a double-ion battery based on molybdenum selenide-graphite and a preparation method of the double-ion battery. The gel containing phosphomolybdic acid is obtained through a simple sol-gel method. The preparation method comprises steps of calcining to synthesize the molybdenum selenide / nitrogen-doped carbon (MoSe2 / NC) compound, and designing the molybdenum selenide-graphite-based dual-ion battery by taking the MoSe2 / NC compound as a negative electrode material of the dual-ion battery and taking graphite as a positive electrode material. The method is advantaged in that the battery designed by the method is low in cost, the working voltage range of the assembled dual-ion battery is as high as 2-5V, and the assembled dual-ion battery is good in cycling stability, relatively high in reversible capacity and good in high-rate performance, the capacity is 86 mA h / g after 100 times of circulation under 2C multiplying power, and the 76 mA h / g reversible capacity can still be provided after circulation under 20 C super-large multiplying power.
Owner:FUZHOU UNIV
Multi-gap vacuum switch based on plasma jet triggering
ActiveCN110225641AFast recoveryIncrease jet speedSpark gap detailsPlasma techniqueCapacitancePlasma jet
The invention relates to a multi-gap vacuum switch based on plasma jet triggering, which comprises a plurality of electrodes with central openings, an intermediate electrode internally equipped with electric spark discharge plasma jet, insulating supports, ring-shaped voltage sharing ceramic capacitors, shielding covers, an insulating sleeve and a high-voltage pulse triggering and freewheeling circuit. The electrodes with central openings and the intermediate electrode internally equipped with electric spark discharge plasma jet constitute a plurality of vacuum gaps connected in series. The intermediate electrode internally equipped with electric spark discharge plasma jet is internally composed of upper and lower plasma jet nozzles, a discharge sphere gap provided with a low-boiling-pointsolid material inside and provided with a gas hole in the center, and a plasma chamber. The plasma jet of the invention adopts a freewheeling circuit to produce more abundant plasmas. Through the propulsion of the gasification of the low-boiling-point solid material, the height of the plasma nozzles is increased, and the reliability of the trigger system is improved. Through series connection ofa plurality of vacuum gaps, the voltage level of the switch is improved.
Owner:ZHENGZHOU UNIV
SCR electrostatic protection structure and forming method thereof
ActiveCN111785717AIncrease holding voltageIncrease working voltageTransistorSolid-state devicesEngineeringMechanical engineering
The invention discloses an SCR electrostatic protection structure and a forming method thereof. The structure comprises: a first unit and a second unit, wherein the first unit comprises a first P-typedoped region positioned at the top in a first N-type well, and a first N-type doped region positioned at the top in a first P-type well, and the second unit comprises a second P-type doped region positioned at the top in a second N-type well, and a second N-type doped region and a third P-type doped region which are located at the top in a second P-type well; a bridging doping group, wherein thebridging doping group comprises a plurality of fourth P-type doped regions arranged along a second direction, each fourth P-type doped region is located at the top of part of the second N-type well and extends to the top of part of the second P-type well, the second direction is perpendicular to the first direction, and a fourth N-type doped region is arranged between the adjacent fourth P-type doped regions; and a conductive structure electrically connected with the fourth N-type doped region and the fourth P-type doped region. According to the invention, the performance of the SCR electrostatic protection structure is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Three-phase sine wave inverter control method having high DC voltage utilization ratio
InactiveCN104967351ASolve the technical problems of online pressure regulation difficultiesImprove DC voltage utilizationAc-dc conversionVoltage amplitudeLow voltage
The invention discloses a three-phase sine wave inverter control method having a high DC voltage utilization ratio, and aims to solve the technical problem of difficulty in online voltage regulation in the prior art. The technical scheme is that through the mixing of switching node preset PWM and unipolar SPWM, the purpose of regulating output voltage by adjusting the modulation ratio of a unipolar SPWM wave is achieved; and meanwhile, when the modulation ratio M of the unipolar SPWM wave is equal to 0, the control method provided by the invention is degraded to the switching node preset PWM, thereby retaining the characteristic of high DC voltage utilization ratio. With the combination of the switching node preset PWM and the unipolar SPWM, the technical problem of difficulty in online voltage regulation for the switching node preset PWM is solved. According to the invention, the output voltage fundamental voltage amplitude and the modulation ratio M are in linear relationship that U1=-1.7299*M+1.0134, and thus the inverter applying the method is allowed to work at low voltage.
Owner:NORTHWESTERN POLYTECHNICAL UNIV
Ballast circuit and gas discharge lamp
InactiveCN101765281AImprove power factorExtended working voltage rangeTransformersElectric lighting sourcesCapacitanceTransformer
Applicable to the field of electric illumination, the invention provides a ballast circuit and a gas discharge lamp. The ballast circuit comprises a transformer, a capacitor and a trigger; the primary winding of the transformer is connected with an alternating-current power supply, and the secondary winding of the transformer is connected with the lamp; the capacitor is connected in series between the primary winding and the secondary winding of the transformer; the trigger is connected in series between the secondary winding of the transformer and the ground; the trigger converts the voltage signals outputted by the secondary winding of the transformer into high-voltage pulse signals which are outputted to the lamp; and the transformer is a leakage step-up autotransformer. Since the ballast circuit adopts the leakage step-up autotransformer and the capacitor connected in series between the primary winding and the secondary winding of the transformer, the power factor of the circuit is increased, the working voltage range of the circuit is broadened, and the capability of controlling the stability of the lamp is enhanced.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +1
FinFET-based boosting supply voltage circuit and method
InactiveUS9036430B2Extended working voltage rangeImprove performanceDigital storageControl signalMemory circuits
A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first transistor having a first polarity type and a second transistor having a second polarity type opposite the first transistor. The first transistor is a planar transistor, a source of the first transistor being connected with the voltage supply, and a gate of the first transistor receiving a control signal. The second transistor includes a gate formed in at least two planes. A source of the second transistor is connected with the voltage supply, a gate of the second transistor receives the control signal, and a drain of the second transistor is connected with a drain of the first transistor and forms an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.
Owner:INT BUSINESS MASCH CORP
Electricity storage device
InactiveUS20170345584A1Low viscosityImprove conductivityHybrid capacitor separatorsHybrid capacitor electrolytesElectricityIonic liquid
This electricity storage device which is configured to contain an ionic liquid represented by formula (1) in, for example, an electrolyte or an electrode has the advantage of being usable in a low-temperature environment in spite of the ionic liquid contained therein.(In the formula, each of R1 and R2 independently represents an alkyl group having 1-5 carbon atoms; and n represents 1 or 2.)
Owner:HISSHINBO HOLDINGS INC
Liquid crystal pixel circuit of liquid crystal display panel and driving method thereof
ActiveUS9653032B2Extended voltage rangeExtended working voltage rangeCathode-ray tube indicatorsLiquid-crystal displayCapacitor
Owner:AU OPTRONICS CORP
Resistance-capacitance power supply for tri-manganin electric energy meter
ActiveCN102338816AImprove reliabilityLow costConversion without intermediate conversion to dcTime integral measurementMicrocontrollerCapacitance
The invention discloses a resistance-capacitance power supply for a tri-manganin electric energy meter. A voltage-stabilizing module, a first voltage-stabilizing diode, first and second diodes, a safety regulation capacitor and a current-limiting resistor are arranged between a phase A and a neutral wire N, between a phase B and the neutral wire N and between a phase C and the neutral wire N, wherein a first diode unit is connected with an input end of a phase wire voltage-stabilizing module connected with a phase wire; a second diode unit is connected with an input end of a neutral wire voltage-stabilizing module connected with the neutral wire; the safety regulation capacitor and the current-limiting resistor are connected in series between the first diode unit and the second diode unit; the anode of the first voltage-stabilizing diode is connected with the phase wire, and the cathode of the first diode is connected with the input end of the phase wire voltage-stabilizing module; the anode of the second voltage-stabilizing diode is connected with the neutral wire, and the cathode of the second diode is connected with the input end of the neutral wire voltage-stabilizing module; and the output voltage of the neutral wire voltage-stabilizing module is loaded on a singlechip of the electric energy meter, and the output voltage of the phase wire voltage-stabilizing module is loaded on a metering chip of the electric energy meter. The resistance-capacitance power supply has the advantages that: a printed circuit board (PCB) resource is not occupied, the reliability is high, and the cost is low.
Owner:HANGZHOU SUNRISE TECH
High-end over-current protection circuit
ActiveCN103022963BAchieve normal workReduce conduction voltage dropArrangements responsive to excess currentElectrical resistance and conductanceCurrent threshold
The invention provides a high-end over-current protection circuit which comprises a power switch tube, a detection resistor, a detection unit and a first control unit. When the detection unit detects that current on a resistor with a known resistance value exceeds a preset threshold value, a level signal is sent to the first control unit; and the first control unit receives the signal and controls a power switch to be switched off. According to the high-end over-current protection circuit, dedicated driver chips are not required, driving can be achieved only by using convention devices, and low costs are achieved; voltage difference required by the detection unit during working is basically fixed so that a current threshold value is adjusted by adjusting a resistance value of the detection resistor during over-current protection; and connection pressure drop of the power switch tube is extremely small so that when input voltage is low, the power switch tube can still be connected to enable the whole circuit to normally work, and large work voltage ranges are achieved.
Owner:BEIJING JINGWEI HIRAIN TECH CO INC
Write-in driving method for plasma display
An addressing driving method for a plasma display is described. The plasma display comprises at least a scan line and at least a common electrode. The addressing driving method uses the following driving scheme. Initially the plasma display is in a reset period, a scanning voltage is used to drive the scan line to equalize the wall charge distribution in cell. When the plasma display is in an addressing period, a time-varying common voltage is applied to the common electrode. Finally, the plasma display is in a sustain period, the display cells are sustained in discharge condition. The driving scheme not only discharge lag for high speed addressing but the voltage margin of the panel voltage is also increased.
Owner:CHUNGHWA PICTURE TUBES LTD
Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element
ActiveCN102495265BEliminate power lossExtended working voltage rangeCurrent/voltage measurementMOSFETHemt circuits
The invention discloses a current sampling circuit of a metal oxide semiconductor field effect transistor (MOSFET) switch element. A first end of the switch element is connected with a first input end of a sampling module and serves as a current input signal end, a second end of the switch element is connected with a second input end of the sampling module and serves as a current output signal end of the MOSFET switch element, and an output end of the sampling module serves as a sampling current output signal end. The sampling module directly samples voltage difference of the first end and the second end of the MOSFET switch element. Maximum voltage difference value allowed between the first input end and the second input end of the sampling module is a withstand voltage value between two input ends of the sampling module. A clamping module included in the sampling module increases the withstand voltage value of the sampling module so that a current path formed between the first input end and the second input end of the sampling module is blocked, and working voltage range of the current sampling circuit of the MOSFET switch element is improved.
Owner:HANGZHOU SILAN MICROELECTRONICS
A method of reducing the leakage current of lithium ion capacitor
ActiveCN108962613BIncrease working voltageWide operating voltage rangeDouble layer capacitorsShort-circuit testingMaterials scienceElectrical current
The invention relates to a method for reducing leakage current of a lithium ion capacitor. The method comprises the steps of chagrining the lithium ion capacitor to voltage Ucharge by using constant current, applying constant voltage Ucharge to the positive electrode and the negative electrode of the lithium ion capacitor, and retaining for the constant voltage Ucharge for 5-180 minutes, wherein the relation of the applied constant voltage Ucharge and the rated voltage UR of the lithium ion capacitor satisfies that UR + 0.1 V <= Ucharge <= UR + 0.2 V. The leakage current of a lithium ion capacitor can be remarkably reduced.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Electrode preparation method and battery
ActiveCN109841796BIncrease areal densityImprove structural stabilityElectrode manufacturing processesSecondary cellsLamellar crystalsElectrical battery
Owner:CHINA FIRST AUTOMOBILE
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