100704 results about "Hemt circuits" patented technology

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

A data path for coupling data between a memory cell and an input / output (IO) line sense amplifier. An IO line coupling circuit is coupled to a pair of global data lines and a pair of local data lines to couple and decouple each of the global data lines to and from a voltage supply based on the voltage levels of the local data lines for the memory read operation. For the memory write operation, the IO line coupling circuit couples and decouples each of the global data lines to and from a respective one of the local data lines. The data path also includes a first precharge circuit coupled to the global data lines to couple the global data lines to ground to precharge the signal lines prior to a memory read or write operation, and can further include a test compression circuit coupled to the global data lines.

A sense amplifier circuit for use in a semiconductor memory device has complemented logic states at opposite sides of the latch circuit in the sense amplifier circuit determinate all the time in operation. The sense amplifier circuit takes advantage of a current mirror circuit for ascending or descending a voltage level at the gate of a transistor by charge accumulation or charge dissipation, which turns on or off the transistor so as to control the logic states at opposite sides of the latch circuit in the sense amplifier circuit.

A touch screen including display pixels with capacitive elements is provided. The touch screen includes first common voltage lines connecting capacitive elements in adjacent display pixels, and a second common voltage line connecting first common voltage lines. The pixels can be formed as electrically separated regions by including breaks in the common voltage lines. The regions can include a drive region that is stimulated by stimulation signals, a sense region that receives sense signals corresponding to the stimulation signals. A grounded region can also be included, for example, between a sense region and a drive region. A shield layer can be formed of a substantially high resistance material and disposed to shield a sense region. A black mask line and conductive line under the black mask line can be included, for example, to provide low-resistance paths between a region of pixels and touch circuitry outside the touch screen borders.

An organic light emitting diode (OLED) display includes an array of OLEDs, each OLED having two terminals; a voltage sensing circuit for each OLED including a transistor in each circuit connected to one of the terminals of a corresponding OLED for sensing the voltage across the OLED to produce feedback signals representing the voltage across the OLEDs; and a controller responsive to the feedback signals for calculating a correction signal for each OLED and applying the correction signal to data used to drive each OLED to compensate for the changes in the output of each OLED.

A sense amplifier circuit senses and amplifies a signal read from memory cells arranged at intersections of word-lines and bit-lines. A write circuit reads first data held in a first memory cell of the memory cells, and writes second data corresponding to the first data in a second memory cell different from the first memory cell. A data latch circuit holds data read from the first memory cell. A logic operation circuit performs a logic operation using data read from the second memory cell and data held in the data latch circuit as input values and outputs third data as an operation value. A write-back circuit writes the third data back to the first memory cell.

Embedded dynamic random access memory (eDRAM) sense amplifier circuitry in which a bit line connected to each of a first plurality of eDRAM cells is controlled by cell control lines tied to each of the cells. During a READ operation the eDRAM cell releases its charge indicating its digital state. The digital charge propagates through the eDRAM sense amplifier circuitry to a mid-rail amplifier inverter circuit which amplifies the charge and provides it to a latch circuit. The latch circuit, in turn, inverts the charge to correctly represent at its output the logical value stored in the eDRAM cell being read, and returns the charge through the eDRAM sense amplifier circuitry to replenish the eDRAM cell.

A semiconductor memory device capable of preventing or minimizing bit line disturbance and performing a low-voltage high-speed operation includes a read data path circuit including a bit line sense amplifier, a local input / output line sense amplifier, a column selecting unit to operationally connect bit lines connected to the bit line sense amplifier to local input / output lines connected to the local input / output line sense amplifier in response to a column selection signal, and a local input / output line precharging unit to precharge the pair of local input / output lines by a first precharging unit, equalizing the pair of local input / output lines by an equalizing unit, and to precharge the local input / output lines by a second precharging unit following an elapsed time after the bit line sense amplifier is activated, while the column selection is deactivated.

Disclosed is a semiconductor memory apparatus, including: a memory cell array configured to include a plurality of memory cells; a switching unit configured to be coupled to data input and output pads and control a data transfer path of data applied to the data input and output pads in response to a test mode signal; a write driver configured to drive data transferred from the switching unit and write the data in the memory cell array at a normal mode; and a controller configured to transfer the data from the switching unit to the memory cell at a test mode.

A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.

An electroluminescent device having a plurality of current driven pixels arranged in rows and columns, such that when current is provided to a pixel it produces light, including each pixel having first and second electrodes and current responsive electroluminescent media disposed between the first and second electrodes; at least one chiplet having a thickness less than 20 micrometers; including transistor drive circuitry for controlling the operation of at least four pixels, the chiplet being mounted on a substrate and having connection pads; a planarization layer disposed over at least a portion of the chiplet; a first conductive layer over the planarization layer and connected to at least one of the connection pads; and a structure for providing electrical signals through the first conductive layer and at least one of the connection pads of the chiplet so that the transistor drive circuitry of the chiplet controls current to the four pixels.

A switched resonant power amplifier system for ultrasonic transducers is disclosed. The system includes an amplifier that receives and processes a driver output signal for generating a drive signal that is provided to an ultrasonic device for controlling output of the ultrasonic device. An output control circuit receives and processes a signal related to a feedback signal generated by the ultrasonic device and a divider reference signal, and generates a compensated clock signal that is adjusted for at least one of phase and frequency differences between the received feedback signal and the divider reference signal. A compensated drive circuit receives and processes the compensated clock signal for generating the divider reference signal, and for generating the driver output signal.

A nonvolatile SRAM array has an array of integrated nonvolatile SRAM circuits arranged in rows and columns on a substrate. Each of the integrated nonvolatile SRAM circuits includes an SRAM cell, a first and second nonvolatile memory element. The SRAM cell has a latched memory element in communication first and second nonvolatile memory elements to receive and permanently retain the digital signal from the latched memory element. A power detection circuit detects a power interruption and a power initiation and communicates the detection of the power interruption and power initiation to the plurality of integrated nonvolatile SRAM circuits. The SRAM cell, upon detection of the power interruption, transmits the digital signal to the first and second nonvolatile memory elements. The SRAM cell of each of the nonvolatile static random access memories upon detection of the power initiation, receives the digital signal from the first and second nonvolatile memory elements.

A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second terminal serves as storage node, third terminal is floating, and fourth terminal serves as bit line, wherein back channel effect is suppressed adding additional ions in the bottom side of third terminal or applying negative voltage in the well or substrate. A capacitor plate couples to second terminal, which plate has no coupling region to first, third and fourth terminal. With no coupling, the inversion layer of plate in the storage node is isolated from the adjacent nodes. In doing so, the plate can swing ground level to positive supply level to write. As a result, no negative generator is required for controlling plate. Word line and bit line keep ground level during standby, and rise to supply level for read or write operation. In this manner, no holding current is required during standby, and operating current is dramatically reduced with no negative generator. Write has a sequence to clear the state of cell before writing to store data regardless of previous state. Refresh cycle is periodically asserted to sustain data. The present invention can be applied for destructive read, or for nondestructive read adding pull-down device to bit line. The height of cell is almost same as control circuit on the bulk or SOI wafer.