1978results about "Muffle furnaces" patented technology

An apparatus for heating a substrate of a semiconductor device includes a hot plate, on which a semiconductor substrate is placed, and a heater for heating the hot plate. The hot plate is preferably a composite plate including a plurality of plates having different thermal conductivities from each other. For example, a first plate adjacent to the heater can be made of aluminum, which has a relatively high thermal conductivity. A second plate, laminated on top of the first plate, can be made of titanium or stainless steel, which both have a thermal conductivity lower than aluminum. A composite hot plate as disclosed herein is better able to maintain a constant temperature and a uniform temperature distribution in order to more uniformly heat a substrate and to reduce an amount of energy required for the heating process. In addition, the reliability and productivity of the semiconductor device manufactured by the apparatus can be improved.

An apparatus for supporting a substrate is described that has a ball adapted to minimize damage between the substrate support and the substrate supported thereon. In one embodiment, an apparatus for supporting a substrate includes ball disposed on an inclined ball support surface. The ball support surface is adapted to bias the ball toward one side of the ball support surface thereby providing space for the ball to roll as the substrate supported thereon changes in length when exposed to thermal influences. In another embodiment, the apparatus further comprises a cage adapted to capture the ball to the ball support surface.

A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

A susceptor is formed with a cavity having a tapered surface and a receiving surface. The gradient α of the tapered surface with respect to the receiving surface is set to at least 5° and less than 30°, so that a semiconductor wafer received by the susceptor can be located on the receiving surface through the tapered surface while the semiconductor wafer can be protected against excess stress also when the surface of the wafer abruptly thermally expands due to flashlight irradiation and can be prevented from cracking in thermal processing. Thus provided are a thermal processing susceptor and a thermal processing apparatus capable of preventing a substrate from cracking in thermal processing.

A thermal control device for wafer processing which comprises a) a platform for placement of an object of various sizes to be heated, b) at least a shaft extending substantially transverse to the platform; and c) a plurality of resistance heating elements patterned in a plurality of circuits defining at least one zone for independent controlled heating of objects of varying sizes on the platform.

Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1 / f).

A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and / or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having a passage, through which substrates are transferred, in one side thereof, the chamber body having opened upper and lower portions, an inner reaction tube disposed above the chamber body to provide a process space in which a process with respect to the substrates is performed, the inner reaction tube having an opened lower portion, a substrate holder disposed in the opened lower portion of the chamber to move between a stacking position at which the substrates transferred through the passage are vertically stacked and a process position at which the substrate holder ascends toward the process space to perform the process with respect to the stacked substrates, a blocking plate connected to a lower portion of the substrate holder to ascend or descend together with the substrate holder, the blocking plate closing the opened lower portion of the inner reaction tube at the process position, a connection cylinder vertically disposed on a lower portion of the blocking plate to ascend or descend together with the blocking plate, and a blocking member connected between the opened lower portion of the chamber body and the connection cylinder to isolate the opened lower portion of the chamber body from the outside.

Processes are described for the extraction and recovery of alkali metal from the char that results from catalytic gasification of a carbonaceous material. Among other steps, the processes of the invention include a hydrothermal leaching step in which a slurry of insoluble particulate comprising insoluble alkali metal compounds is treated with carbon dioxide and steam at elevated temperatures and pressures to effect the conversion of insoluble alkali metal compounds to soluble alkali metal compounds. Further, processes are described for the catalytic gasification of a carbonaceous material where a substantial portion of alkali metal is extracted and recovered from the char that results from the catalytic gasification process.

Processes are described for the extraction and recovery of alkali metal from the char that results from catalytic gasification of a carbonaceous material. Among other steps, the processes of the invention include a hydrothermal leaching step in which a slurry of insoluble particulate comprising insoluble alkali metal compounds is treated with carbon dioxide and steam at elevated temperatures and pressures to effect the conversion of insoluble alkali metal compounds to soluble alkali metal compounds. Further, processes are described for the catalytic gasification of a carbonaceous material where a substantial portion of alkali metal is extracted and recovered from the char that results from the catalytic gasification process.

A low-temperature gasification system comprising a horizontally oriented gasifier is provided that optimizes the extraction of gaseous molecules from carbonaceous feedstock while minimizing waste heat. The system comprises a plurality of integrated subsystems that work together to convert municipal solid waste (MSW) into electricity. The subsystems comprised by the low-temperature gasification system are: a Municipal Solid Waste Handling System; a Plastics Handling System; a Horizontally Oriented Gasifier with Lateral Transfer Units System; a Gas Reformulating System; a Heat Recycling System; a Gas Conditioning System; a Residue Conditioning System; a Gas Homogenization System and a Control System.

Production of synthetic liquid hydrocarbon fuel from carbon containing moieties such as biomass, coal, methane, naphtha as a carbon source and hydrogen from a carbon-free energy source is disclosed. The biomass can be fed to a gasifier along with hydrogen, oxygen, steam and recycled carbon dioxide. The synthesis gas from the gasifier exhaust is sent to a liquid hydrocarbon conversion reactor to form liquid hydrocarbon molecules. Unreacted CO & H2 can be recycled to the gasifier along with CO2 from the liquid hydrocarbon conversion reactor system. Hydrogen can be obtained from electrolysis of water, thermo-chemical cycles or directly by using energy from carbon-free energy sources.

A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.

Methods for carrying out high temperature reactions such as biomass pyrolysis or gasification using solar energy. The biomass particles are rapidly heated in a solar thermal entrainment reactor. The residence time of the particles in the reactor can be 5 seconds or less. The biomass particles may be directly or indirectly heated depending on the reactor design. Metal oxide particles can be fed into the reactor concurrently with the biomass particles, allowing carbothermic reduction of the metal oxide particles by biomass pyrolysis products. The reduced metal oxide particles can be reacted with steam to produce hydrogen in a subsequent process step.

The present invention concerns a process and an apparatus for thermal conversion of biomass and organic wastes. According to the invention, the feedstock is fed into a fluidized-bed reactor, wherein the feed is converted at an elevated temperature under the influence of particulate matter kept in a fluidized state by a fluidizing gas, the particulate matter is transferred from the reactor to a regenerator for regeneration and then recirculated to the reactor after the regeneration, and the converted hydrocarbon products are recovered from the reactor. Both the reactor and the regenerator comprise risers having an axially annular cross section and being equipped with multi-inlet cyclones for the separation of particulate matter. By means of the invention, it is possible to producer pyrolysis oil, the quality of which is higher than that of oil produced with the processes of the prior art. The incorporation of multi-inlet cyclones into the reactor configuration reduces gas velocities, reduces the physical size of the cyclone and shortens the residence time of gases in the cyclone.

Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

The present invention provides a method for carrying out high temperature thermal dissociation reactions requiring rapid-heating and short residence times using solar energy. In particular, the present invention provides a method for carrying out high temperature thermal reactions such as dissociation of hydrocarbon containing gases and hydrogen sulfide to produce hydrogen and dry reforming of hydrocarbon containing gases with carbon dioxide. In the methods of the invention where hydrocarbon containing gases are dissociated, fine carbon black particles are also produced. The present invention also provides solar-thermal reactors and solar-thermal reactor systems.

A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.