5701 results about "Ceramic substrate" patented technology

In one embodiment, an endoscopic camera for a robotic surgical system includes a stereo camera module mounted to a robotic arm of a patient side cart. The optical and electro-optic components of the camera module are hermetically sealed within a first housing. Signals from an electro-optic component travel through traces in a ceramic substrate forming one side of the hermetically sealed first housing. A second housing surrounds the first housing and optical fibers are dispersed between the housings to provide lighting in a body cavity. The camera module may be sterilized by an autoclave.

The present invention provides a method for producing a high-density multi-layer ceramic substrate with stable characteristics, the substrate incorporating therein a passive component such as a high-precision capacitor or inductor. The method comprises the steps of providing compact blocks containing a green ceramic functional material to form the passive components; providing a composite green laminate having a plurality of ceramic green sheets comprising a ceramic insulating material and in which the compact blocks are built in pre-disposed spaces and a paste containing a metal inducing, during firing, oxidation reaction accompanied by expansion is provided in space between inside walls of the spaces and the compact blocks; firing the composite green laminate in a state in which the laminate is sandwiched by the sheet-like supports formed of green ceramics that cannot be sintered at the sintering temperature, so as to prevent shrinkage of the laminate; and removing the unsintered sheet-like supports.

The present invention relates to apparatus, compositions and methods of fabricating high performance thin-film batteries on metallic substrates, polymeric substrates, or doped or undoped silicon substrates by fabricating an appropriate barrier layer composed, for example, of barrier sublayers between the substrate and the battery part of the present invention thereby separating these two parts chemically during the entire battery fabrication process as well as during any operation and storage of the electrochemical apparatus during its entire lifetime. In a preferred embodiment of the present invention thin-film batteries fabricated onto a thin, flexible stainless steel foil substrate using an appropriate barrier layer that is composed of barrier sublayers have uncompromised electrochemical performance compared to thin-film batteries fabricated onto ceramic substrates when using a 700° C. post-deposition anneal process for a LiCoO₂ positive cathode.

A miniaturized antenna is described with at least a ceramic substrate (10) and a metallization, particularly designed for use in the high-frequency and microwave ranges. The antenna is characterized in that the metallization is a surface metallization which is formed by a feed terminal (12) for electromagnetic energy to be radiated, by at least a first metallization structure (30), and by a conductor track (20) extending along at least part of the circumference of the substrate (10), which track connects the feed terminal to the at least one first metallization structure (30), which first metallization structure (30) comprises a first conductor track portion (31) extending from a side of the substrate lying opposite the feed terminal (12) towards the feed terminal and a first metallization pad (32). The antenna can be provided on a printed circuit board by surface mounting and has a great impedance and radiation bandwidth, so that it is particularly suitable for use in mobile telephones operating in the GSM and UMTS bands.

A novel antenna system for receiving transmissions in the VHF and UHF frequency bands particularly suitable as a miniaturized antenna for UHF reception, such as of digital video broadcasting transmissions. The antenna system utilizes a combination of three techniques including (1) the use of dialect loading using a high dielectric constant ceramic substrate; (2) an antenna dielectrically loaded and tuned to a significantly higher frequency than desired; and (3) use of a tuning circuit to compensate for the frequency offset of the antenna thereby shifting the resonant frequency to cover the entire band. The antenna is intentionally designed to be too small to radiate at the frequency of interest. The antenna element is then ‘forced’ to be tuned to the desired lower frequency using passive (or active) reactive components as part of a tuning circuit. Multi-band operation is achieved by providing a bypass switch to connect the antenna element either to (1) a first receiver without the tuning circuit (i.e. high frequency tuning) or (2) a second receiver with the tuning circuit (i.e. low frequency tuning).

A waveguide bandpass filter for use in microwave and millimeter-wave satellite communications equipment is presented. The filter is based on a substrate integrated waveguide (SIW) having several cascaded oversized SIW cavities. The filter is implemented in a printed circuit board (PCB) or a ceramic substrate using arrays of standard metalized via holes to define the perimeters of the SIW cavities. Transmission lines of a microstrip line, a stripline or coplanar waveguide are used as input and output feeds. The transmission lines have coupling slots for improved stopband performance. The filter can be easily integrated with planar circuits for microwave and millimeter wave applications.

A highly reliable copper circuit-joined board that, in mounting a semiconductor element, a lead frame or the like on a ceramic substrate, enables the semiconductor element, the lead frame or the like to be strongly joined to the substrate without breaking or deformation of the substrate found in conventional joining methods, such as brazing and joining using a copper/copper oxide eutectic crystal. Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1000.degree. C. or below, comprising Ni, Fe, Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board. The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.

Light-emitting diode (LED) packages with improved heat transfer paths for LED dies encased therein when compared to conventional LED packages are provided. For some embodiments, the LED package includes a ceramic substrate having a top cavity with one or more LED dies disposed within and having a bottom cavity for receiving a metallic insert to dissipate heat away from the LED dies. For other embodiments, an LED package is provided that includes a ceramic substrate having a heat spreader coupled to thermal vias filled with a highly thermally conductive composite.

A circuit board assembly with a substrate having a laminate construction of ceramic layers, such as an LTCC ceramic substrate. The substrate is configured for the purpose of improving the thermal management of power circuit devices mounted to the substrate. Thermally-conductive vias extend through the substrate from a first surface thereof to a second surface thereof. A circuit device is mounted to the first surface of the substrate and is electrically interconnected to conductor lines of the substrate. The device is also thermally coupled to the thermally-conductive vias with a first solder material. A heat sink located adjacent the second surface of the substrate is bonded to the thermally-conductive vias with a second solder material, such that the first solder material, the thermally-conductive vias, and the second solder material define a thermal path from the device to the heat sink.

A ceramic substrate comprising a metallic layer on its surface, wherein said metallic layer includes: a silver layer containing silver; a gold layer containing gold; and a nickel layer containing nickel, in this order from an outermost layer of said metallic layer.

Method for forming a transformer (118) in a ceramic substrate. The method can include the steps of forming at least one conductive coil (119a, 119b) comprising a plurality of turns about an unfired ceramic toroidal core region (120a, 120b) defined within an unfired ceramic substrate (100). The method can also include the step of co-firing the unfired ceramic toroidal core region (120a, 120b), the unfired ceramic substrate (100), and the conductive coil (119a, 119b) to form an integral ceramic substrate structure with the conductive coil at least partially embedded therein.

A light-emitting device with high heat-dissipating efficiency, includes a ceramic substrate having at least one pair of power-supply circuits mounted at a specific location of the substrate, a light-emitting die fixedly mounted on the ceramic substrate by flip-chip mounting, wherein the two electrodes of the light-emitting die are electrically connected to a corresponding power-supply circuit, respectively, and an optical reflector which is adjacently mounted in the periphery of the light-emitting die and made up of a metallic material or a material with a high coefficient of thermal conductivity for increasing the heat-dissipating area and providing a light-guiding mechanism.

A LED (light emitting diode) illumination device includes a ceramic substrate to integrate a plurality of LED dies and a control circuit together so that a volume of the LED illumination device can be reduced and the heat dissipation of the LED illumination device can be enhanced. The LED illumination device utilizes sound control to change the light emitted from each LED die, so that the illuminating light mixed from the emitting light of the LED dies of the LED illumination device can vary in color and brightness according to the tempo and volume of music, for example, to provide more cheerful and joyful feeling.

A multilayered coating system consisting of a multicomponent zirconia-base or hafnia-base oxide top layer, an interlayer comprised of a plurality of sublayers and a bond coat layer is provided. The multilayered coating system of the present invention, with an interlayer comprised of a plurality of sublayers, provides a protective coating solution for silicon-base ceramic components exposed to very high temperatures and/or high gas flow velocity water vapor combustion environments. The plurality of sublayers affords for a multitude of interfaces that aid in phonon scattering within the coating system and thereby reduces its thermal conductivity. Furthermore, the plurality of interlayer sublayers afford a strain tolerant buffer between the top layer and substrate and thereby accommodate the thermal expansion mismatch between the oxide top layer (coefficient of thermal expansion (CTE) up to ˜8-10×10⁻⁶ m/m-C) and the silicon-base ceramic substrate (CTE≈4-5×10⁻⁶ m/m-C).

The invention pertains to a processing insert comprised of a body with a hard metal or ceramic substrate and with a multilayer coating and the manufacture of same. In order to have a highly fracture-tough insert with a relatively thick coating, it is suggested that an external layer (protective layer) be applied according to the CVD process, said layer being either a monophase or multiphase layer of Zr-based or Hf-based carbide nitride or carbonitride, and presenting internal compressive stresses. The layer(s) underlying the external layer, also applied according to the CVD process, also present(s), without any exception, internal compressive stresses, while at least one of them, maybe the only one laying under the protective layer is made of TiN, TiC and/or TiCN. The coating is applied according to a continuous CVD process at temperatures of 900° C. to 1100° C. and involves a specific modification of the gas compounds.