A method of
processing a thin
film structure on a
semiconductor substrate using an optically writable
mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a
light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing
mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF
plasma current in a reentrant path that includes a
process zone overlying the workpiece by
coupling plasma RF source power to an external portion of the reentrant path, (c)
coupling RF
plasma bias power or bias
voltage to the workpiece. The method further includes optically writing on the carbon-containing
mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or
opacity of the optically writable
mask layer and exposing through the
mask layer the target layer with reading light of a characteristic different from that of the writing light.