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5649 results about "Crystalline silicon" patented technology

Crystalline silicon (c-Si) is the crystalline forms of silicon, either multicrystalline silicon (multi-Si) consisting of small crystals, or monocrystalline silicon (mono-Si), a continuous crystal. Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight.

Semiconductor device and method for fabricating the same

A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.
Owner:SEMICON ENERGY LAB CO LTD

Solar cell

The present invention provides a thin film amorphous silicon-crystalline silicon back heterojunction and back surface field device configuration for a heterojunction solar cell. The configuration is attained by the formation of heterojunctions on the back surface of crystalline silicon at low temperatures. Low temperature fabrication allows for the application of low resolution lithography and/or shadow masking processes to produce the structures. The heterojunctions and interface passivation can be formed through a variety of material compositions and deposition processes, including appropriate surface restructing techniques. The configuration achieves separation of optimization requirements for light absorption and carrier generation at the front surface on which the light is incident, and in the bulk, and charge carrier collection at the back of the device. The shadowing losses are eliminated by positioning the electrical contacts at the back thereby removing them from the path of the incident light. Back contacts need optimization only for maximum charge carrier collection without bothering about shading losses. A range of elements/alloys may be used to effect band-bending. All of the above features result in a very high efficiency solar cell. The open circuit voltage of the back heterojunction device is higher than that of an all-crystalline device. The solar cell configurations are equally amenable to crystalline silicon wafer absorber as well as thin silicon layers formed by using a variety of fabrication processes. The configurations can be used for radiovoltaic and electron-voltaic energy conversion devices.
Owner:KHERANI NAZIR P +1

Photovoltaic cell and method of fabricating the same

An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.
Owner:SANYO ELECTRIC CO LTD

System and method of fabricating micro cavities

A system and method for manufacturing micro cavity packaging enclosure at the wafer level using MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed from epoxy-bonded single-crystalline silicon wafer as its cap, epoxy and deposited metal or insulator as at least part of its sidewall, on substrate wafers.
Owner:WAN CHANG FENG

Surface cleaning and texturing process for crystalline solar cells

Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate.
Owner:APPLIED MATERIALS INC

Method of multiple pulse laser annealing to activate ultra-shallow junctions

A method for forming a highly activated ultra shallow ion implanted semiconductive elements for use in sub-tenth micron MOSFET technology is described. A key feature of the method is the ability to activate the implanted impurity to a highly active state without permitting the dopant to diffuse further to deepen the junction. A selected single crystalline silicon active region is first amorphized by implanting a heavy ion such as silicon or germanium. A semiconductive impurity for example boron is then implanted and activated by pulsed laser annealing whereby the pulse fluence, frequency, and duration are chosen to maintain the amorphized region just below it's melting temperature. It is found that just below the melting temperature there is sufficient local ion mobility to secure the dopant into active positions within the silicon matrix to achieve a high degree of activation with essentially no change in concentration profile. The selection of the proper laser annealing parameters is optimized by observation of the reduction of sheet resistance and concentration profile as measured on a test site. Application of the method is applied to forming a MOS FET and a CMOS device. The additional processing steps required by the invention are applied simultaneously to both n-channel and p-channel devices of the CMOS device pair.
Owner:CHARTERED SEMICONDUCTOR MANUFACTURING

Electric conductive silver paste and manufacturing method thereof

The invention discloses electric conductive silver paste and a manufacturing method of the electric conductive silver paste. The electric conductive silver paste comprises, by mass percentage, 35 - 65 % of micron-sized silver powder, 1-10 % of nanometer-sized silver powder of or 1-20 % of nanometer-sized silver and other metal alloy powder, and 1-10 % of an organic carrier; for ceramics, solar cell silver paste comprises 2-15 % of unleaded glass powder, each component is manufactured in parts, weighed, mixed and stirred or mixed and rapidly scattered, and ultrasonic-vibrated or fine adjusted of viscosity of solvent, and therefore the electric conductive silver paste is obtained. Due to the fact that the nanometer-sized silver powder or the nanometer-sized silver alloy powder is mixed with the micron-sized silver powder, intensity of conductivity and a circuit is improved, adhesive force of crushing resistance and a base plate is improved, at the same time unleaded slurry good in thixotropy, low in contacting resistance and low in piece-needed slurry amount replaces lead slurry materials, the electric conductive silver paste is used for manufacturing crystalline silicon solar cells, improves photoelectric conversion efficiency, accords with environmental-protection ideas, and can be produced in large scales continuously.
Owner:SHENZHEN CHENGGONG CHEM

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
Owner:SEMICON ENERGY LAB CO LTD
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