The present invention generally relates to
nanotechnology and sub-microelectronic devices that can be used in circuitry, and, in particular, to nanoscale wires and other nanostructures able to
encode data. One aspect of the present invention is directed to a device comprising an electrical
crossbar array comprising at least two crossed wires at a
cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a
crystal (e.g.,
crystalline silicon) and the shell may be at least partially amorphous (e.g.,
amorphous silicon). In certain embodiments, the
cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the
cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive
voltage, and the cross point may exhibit a second conductance at a
negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.