3608 results about "Compound semiconductor" patented technology

A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.

A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

A complementary metal-oxide-semiconductor field effect transistor structure includes ion implants in only one of the two complementary devices. The transistor structure generally includes a compound semiconductor substrate and an epitaxial layer structure that includes one or more donor layers that establish a conductivity type for the epitaxial layer structure. The ion implants function to “invert” or “reverse” the conductivity type of the epitaxial layer structure in one of the complementary devices. In the example embodiment, p-type acceptor implants are utilized in the p-channel device, while the n-channel device remains implant-free.

A semiconductor light-emitting device comprises a multilayer structure and a glass substrate. The multilayer structure includes a plurality of laminated compound semiconductor layers and generates light. The multilayer structure has a light exit face for emitting the generated light, whereas the glass substrate optically transparent to the light is bonded to the light exit face by a film made of silicon oxide.