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4658results about "From normal temperature solutions" patented technology

Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same

The present invention provides new compositions containing naearly monodisperse colloidal core / shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core / shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ARKANSAS

Aqueous treatment apparatus utilizing precursor materials and ultrasonics to generate customized oxidation-reduction-reactant chemistry environments in electrochemical cells and/or similar devices

An electrochlorination and electrochemical system for the on-site generation and treatment of municipal water supplies and other reservoirs of water, by using a custom mixed oxidant and mixed reductant generating system for the enhanced destruction of water borne contaminants by creating custom oxidation-reduction-reactant chemistries with real time monitoring. A range of chemical precursors are provided that when acted upon in an electrochemical cell either create an enhanced oxidation, or reduction environment for the destruction or control of contaminants. Chemical agents that can be used to control standard water quality parameters such as total hardness, total alkalinity, pH, total dissolved solids, and the like are introduced via the chemical precursor injection subsystem infrequently or in real time based on sensor inputs and controller set points.
Owner:GLOBAL WATER INVESTMENTS LLC

Bulk nitride mono-crystal including substrate for epitaxy

The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
Owner:AMMONO SP Z O O (PL) +1
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