482results about How to "Reduced life-time" patented technology

The present invention relates to a web processing device, comprising a plurality of pads Pi revolving around a axis X1, a cutter 30 for cutting a continuous web W, and a plurality of anvils Ai for receiving the cutter 30. The pads Pi receive the continuous web W, and the cutter 30 cuts the continuous web W into a cut-off web W2 together with the anvil Ai positioned at a first relative level L1. The pad Pi revolves around the axis X1 while changing an attitude of the pad Pi by turning about a line extending from the first axis toward the pad Pi, thereby carrying the cut-off web W2 while changing an attitude of the cut-off web W2. When the pad Pi changes its attitude, the anvil Ai relatively moves to a second relative level L2 so as not to hinder the pad Pi changing its attitude.

An EUV photon source includes a plasma chamber filled with a gas mixture, multiple electrodes within the plasma chamber defining a plasma region and a central axis, a power supply circuit connected to the electrodes for delivering a main pulse to the electrodes for energizing the plasma around the central axis to produce an EUV beam output along the central axis, and a preionizer for ionizing the gas mixture in preparing to form a dense plasma around the central axis upon application of the main pulse from the power supply circuit to the electrodes. The EUV source preferably includes an ionizing unit and precipitator for collecting contaminant particulates from the output beam path. A set of baffles may be disposed along the beam path outside of the pinch region to diffuse gaseous and contaminant particulate flow emanating from the pinch region and to absorb or reflect acoustic waves emanating from the pinch region away from the pinch region. A clipping aperture, preferably formed of ceramic and / or Al2O3, for at least partially defining an acceptance angle of the EUV beam. The power supply circuit may generates the main pulse and a relatively low energy prepulse for homogenizing the preionized plasma prior to the main pulse. A multi-layer EUV mirror is preferably disposed opposite a beam output side of the pinch region for reflecting radiation along the central axis for output along the beam path of the EUV beam. The EUV mirror preferably has a curved contour for substantially collimating or focusing the reflected radiation. In particular, the EUV mirror may preferably have a hyperbolic contour.

Two embodiments of a heat exchanger assembly for cooling an electronic device are shown respectively in FIGS. 1 and 3 and each comprises a housing, a plurality of high fins, a plurality of low fins, a nozzle plate, an inlet, at least one outlet, a primary nozzle, and a plurality of secondary nozzles. In the first embodiment shown in FIG. 1, the housing and the nozzle plate are circular in shape. In the second embodiment shown in FIG. 3, the housing and the nozzle plate are rectangular in shape. Both embodiments include a plurality of secondary nozzles that are aligned outwardly of the primary nozzle and the center axis of the nozzle plate. The secondary nozzles direct the flow of the cooling liquid outwardly of the primary nozzle from the center thus creating an overall system pressure drop lower than that of other assemblies without a plurality of secondary nozzles.

The method and system herein pertain to an EUV photon source which includes a plasma chamber filled with a gas mixture, multiple electrodes within the plasma chamber defining a plasma region and a central axis, a power supply circuit connected to the electrodes for delivering a main pulse to the electrodes for energizing the plasma around the central axis to produce an EUV beam. The system can also include a preionizer for ionizing the gas mixture in preparing to form a dense plasma around the central axis upon application of the main pulse from the power supply circuit to the electrodes. A set of baffles may be disposed along the beam path outside of the pinch region to diffuse gaseous and contaminant particulate flow emanating from the pinch region and to absorb or reflect acoustic waves emanating from the pinch region away from the pinch region.

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.

An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core / shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core / shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.

A connecting member has a slider with rotation shafts and a contact combined with the slider. The contact has contact portions for connection to a connection object and pressing portions connected to the contact portions, respectively. By rotating the slider about the rotation shafts to press the pressing portions, the contact portions are displaced to be connected to the connection object. It may be configured to press the pressing portions by moving the slider in a straight or curved line. Further, it may be configured that the slider presses the pressing portions to thereby displace the contact portions in directions away from the connection object.

An apparatus is described, including: a signal processing circuit adapted to process an input signal to obtain an output signal; a sensor element for sensing a predetermined physical quantity, wherein the sensor element is adapted to generate a sensor signal in response to the predetermined physical quantity; wherein the signal processing unit is adapted to process the input signal to obtain the output signal depending on the sensor signal; and wherein the apparatus further comprises an evaluation circuit adapted to evaluate the sensor signal and to generate an indication signal indicating an abnormal operating condition in case the sensor signal does not fulfill a predetermined normal operation criterion.

A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals.

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

Two embodiments of a heat exchanger assembly for cooling an electronic device are shown respectively in FIGS. 1 and 3 and each comprises a housing, a plurality of high fins, a plurality of low fins, a nozzle plate, an inlet, at least one outlet, a primary nozzle, and a plurality of secondary nozzles. In the first embodiment shown in FIG. 1, the housing and the nozzle plate are circular in shape. In the second embodiment shown in FIG. 3, the housing and the nozzle plate are rectangular in shape. Both embodiments include a plurality of secondary nozzles that are aligned outwardly of the primary nozzle and the center axis of the nozzle plate. The secondary nozzles direct the flow of the cooling liquid outwardly of the primary nozzle from the center thus creating an overall system pressure drop lower than that of other assemblies without a plurality of secondary nozzles.

A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.