7584 results about "Perovskite" patented technology

A perovskite-based thin film structure includes a semiconductor substrate layer, such as a crystalline silicon layer, having a top surface cut at an angle to the (001) crystal plane of the crystalline silicon. A perovskite seed layer is epitaxially grown on the top surface of the substrate layer. An overlayer of perovskite material is epitaxially grown above the seed layer. In some embodiments the perovskite overlayer is a piezoelectric layer grown to a thickness of at least 0.5 μm and having a substantially pure perovskite crystal structure, preferably substantially free of pyrochlore phase, resulting in large improvements in piezoelectric characteristics as compared to conventional thin film piezoelectric materials.

The invention relates to a perovskite / polymer composite luminescent material and a preparation method thereof, which belong to the technical field of composite materials and luminescent materials, wherein the structural formula of the perovskite is R1NH3AB3 or (R2NH3)2AB4, A and B form a ligand octahedral structure, R1NH3 or R2NH3 are filled into gaps of the ligand octahedral structure which is formed through the A and the B, R1 is methyl, R2 is a long-chain organic molecular group, the A is any one of metal Ge, Sn, Pb, Cu, Mn, Sb and Bi, the B is any one of Cl, Br and I. The perovskite / polymer composite luminescent material which is made through the preparation method is high in luminescent intensity, high in luminescent color purity, excellent in light and thermal stability and excellent chemical resistant property and mechanical property, and lays the foundation for theory research and application of the perovskite / polymer composite luminescent material in high-performance photoluminescence devices, flexible display, lasers, nonlinear optical devices. The preparation method can obtain composite materials which can cover a whole visible region through luminescent wavelengths, and has wide application prospect in the fields of wide gamut light emitting diode (LED) and high performance displays and the like.

A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and / or a transition metal oxide.

A solid state membrane for a reforming reactor is disclosed which comprises at least one oxygen anion-conducting oxide selected from the group consisting of hexaaluminates, cerates, perovskites, and other mixed metal oxides that are able to adsorb and dissociate molecular oxygen. The membrane adsorbs and dissociates molecular oxygen into highly active atomic oxygen and allows oxygen anions to diffuse through the membrane, to provide high local concentration of oxygen to deter formation and deposition of carbon on reformer walls. Embodiments of the membrane also have catalytic activity for reforming a hydrocarbon fuel to synthesis gas. Also disclosed are a reformer having an inner wall containing the new membrane, and a process of reforming a hydrocarbon feed, such as a high sulfur-containing diesel fuel, to produce synthesis gas, suitable for use in fuel cells.

A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed halide perovskite of the formula (I) [A][B][X]3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.

Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0≦a≦1, 0≦b≦1.

Perovskite-type catalyst consists essentially of a metal oxide composition is provided. The metal oxide composition is represented by the general formula A.sub.1-x B.sub.x MO.sub.3, in which A is a mixture of elements originally in the form of single phase mixed lanthanides collected from bastnasite; B is a divalent or monovalent cation; M is at least one element selected from the group consisting of elements of an atomic number of from 22 to 30, 40 to 51, and 73 to 80; and x is a number defined by 0.ltoreq.x<0.5.

The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.

Structures and methods for in service programmable logic arrays with low tunnel barrier interpoly insulators are provided. The in-service programmable logic array includes a first logic and a second logic plan having a number of logic cells arranged in rows and columns that are interconnected to produce a number of logical outputs such that the in service programmable logic array implements a logical function. The logic cell includes a first source / drain region and a second source / drain region separated by a channel region in a substrate. A floating gate opposing the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of PbO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5 and / or a Perovskite oxide tunnel barrier.

To provide a grain oriented ceramic capable of exerting excellent piezoelectric properties, a production method thereof, and a piezoelectric material, a dielectric material, a thermoelectric conversion element and an ion conducting element each using the grain oriented ceramic, there is provided a grain oriented ceramic comprising, as the main phase, an isotropic perovskite-type compound which is represented by formula (1): {Lix(K1−yNay)1−x}(Nb1−z−wTazSbw)O3 in which x, y, z and w are in respective composition ranges of 0≦x≦0.2, 0≦y≦1, 0≦z≦0.4, 0≦w≦0.2 and x+z+w>0. The main phase comprises a polycrystalline body containing from 0.0001 to 0.15 mol of any one or more additional element selected from metal elements, semimetal elements, transition metal elements, noble metal elements and alkaline earth metal elements belonging to Groups 2 to 15 of the Periodic Table, per mol of the compound represented by formula (1). A specific crystal plane of each crystal grain constituting said polycrystalline body is oriented.

The invention discloses lithium-enriched anti-perovskite sulfides and a solid electrolyte material. The general formula of the lithium-enriched anti-perovskite sulfides is (LimMn)3-xS1-y(XaYb)1-z, wherein m is more than 0 and less than or equal to 1, n is more than or equal to 0 and less than to 0.5, (m+n) is less than or equal to 1, a is more than 0 and less than or equal to 1, b is more than or equal to 0 and less than 1, (a+b) is less than or equal to 1, x is more than or equal to 0 and less than or equal to 0.5, y is more than or equal to 0 and less than or equal to 0.5, z is more than or equal to 0 and less than or equal to 0.5 and x=2y+z; M is H, Na, K, Rb, Mg, Ca, Sr, Ba, Y, La, Ti, Zr, Zn, B, Al, Ga, In, C, Si, Ge, P, S or Se; and X is Fe, Cl, Br or I, and Y is a negative ion. The solid electrolyte material has high ion conductivity and thermal stability and a wide working temperature range, and can be applied to lithium ion batteries, rechargeable metal lithium batteries, lithium liquid flow batteries or lithium ion capacitors.

Structures and methods for programmable memory address and decode circuits with low tunnel barrier interpoly insulators are provided. The decoder for a memory device includes a number of address lines and a number of output lines wherein the address lines and the output lines form an array. A number of logic cells are formed at the intersections of output lines and address lines. Each of the logic cells includes a floating gate transistor which includes a first source / drain region and a second source / drain region separated by a channel region in a substrate. A floating gate opposes the channel region and is separated therefrom by a gate oxide. A control gate opposing the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of PbO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5 and / or a Perovskite oxide tunnel barrier.

The invention relates to a perovskite solar battery and a preparing method thereof. The perovskite solar battery comprises a transparent electrode, a hole transmission layer, a perovskite light absorption layer, an electronic transmission layer and a metal electrode. The hole transmission layer comprises at least one of PEDOT: PSS, P3HT, PTAA, PThTPTI, metallic oxide and graphene oxide. The electronic transmission layer comprises at least one of 58 pi-electronic fullerene PCBM, 56 pi-electronic fullerene OQMF, 54 pi-electronic fullerene OQBMF, PFN, PEIE, ZnO, TiO2, doped or modified ZnO or TiO2. The perovskite solar battery is high in energy exchange efficiency and low in cost and can be produced on a large scale, and the preparing method is simple in technology.

The invention discloses a high-yield preparing method for inorganic halogen perovskite fluorescent quantum dots at the room temperature. The fluorescent quantum dots are CsPbX3, wherein X is equal to AxB1-x and is larger than or equal to 0 and smaller than or equal to 1, and A and B are any one of Cl, Br and I. The method comprises the following steps that firstly, lead halide and cesium halide are dissolved into dimethyl formamide, surfactant oleylamine and oleic acid are added, the mixture is stirred until complete dissolution, and a precursor solution is obtained; secondly, the precursor solution is dripped into a poor solvent at the speed of 0.08-0.13 mL / s and stirred evenly at the uniform speed, and the inorganic halogen perovskite fluorescent quantum dots CsPbX3 are obtained. The preparing method is implemented at the room temperature, protection gas is not needed, equipment is simple, mass production can be achieved, and full visible light band shining can be achieved by selecting halogen and adjusting the proportion of halogen. The full width at half maximum of the inorganic halogen perovskite fluorescent quantum dots prepared through the preparing method ranges from 16 nm to 39 nm, the fluorescence quantum efficiency is close to 90%, and the inorganic halogen perovskite fluorescent quantum dots can be stably stored for more than three months, and can be used in the field of solar cells, lasers, light detectors, light-emitting diodes and the like.

A multilayered high performance capacitor formed of two or more conductors with a dielectric layer and one or more a dielectric-conductor interface layer sandwiched in between the conductors. The capacitor may be fabricated using many thin layers, at the nano level, providing a nanocapacitor. The capacitor may employ an interleaved structured where numerous conductor layers are interleaved with other conductor layers. The dielectric layers may be multilayered or a single layer and may consist of materials with high dielectric constants ranging from 800 to over 1 million, including materials in the perovskite-oxide family. The capacitor can be shaped, sized and the appropriate materials selected to obtain breakdown voltages within the range of 0.1 to over 11 MV / cm and to obtain specific energies and energy densities equivalent to or exceeding the power characteristics of known capacitors, fuel cells, and batteries. The nanocapacitor may be combined with other nanocapacitors to form stacks, packs, or grids of cells where the cells may be connected in series, parallel or both to provide increased energy or power characteristics

The invention discloses a perovskite type electroluminescence device. The device comprises a substrate, a cathode, an electronic transmission-hole blocking layer, a luminescent layer, a hole transmission-electron blocking layer and an anode, wherein the luminescent layer is made of a material of a perovskite structure; the structure of the device can effectively promote injection and transmission of the charge carriers, restrict the sufficient recombination luminescence of the charge carriers / excitons, and adjust the emission color from the near ultraviolet light band, the visible light band to the near-infrared band by means of changing the components of the luminescent material. The electroluminescence device provided by the invention is high in efficiency, low in turn-on voltage, excellent in color saturation and stable in spectrum changed along with the voltage, meanwhile, the perovskite type electroluminescence device is simple in process, low in cost and is suitable for being widely used in the products of the display and illumination field, in particular suitable for the large-sized industrial production of the high-performance electroluminescence devices with low cost and flexible substrate.

A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

A monolithic multi-junction (tandem) photo-voltaic (PV) device includes one or more PV subcells epitaxially formed on a compliant silicon substrate (102). The compliant silicon substrate (102) includes a base silicon layer (108), a conductive perovskite layer (112), and an oxide layer (110) interposed between the base silicon layer (108) and the conductive perovskite layer (112). A PV subcell is formed within the base silicon layer (108) of the conductive silicon substrate (102). The conductive perovskite layer (112) facilitates the conduction of charge carriers between the PV subcell formed in the compliant silicon substrate (102) and the one or more PV subcells formed on the compliant silicon substrate (102).

An electrolyzer cell is disclosed which includes a cathode to reduce an oxygen-containing molecule, such as H2O, CO2, or a combination thereof, to produce an oxygen ion and a fuel molecule, such as H2, CO, or a combination thereof. An electrolyte is coupled to the cathode to transport the oxygen ion to an anode. The anode is coupled to the electrolyte to receive the oxygen ion and produce oxygen gas therewith. In one embodiment, the anode may be fabricated to include an electron-conducting phase having a perovskite crystalline structure or structure similar thereto. This perovskite may have a chemical formula of substantially (Pr(1-x)Lax)(z-y)A′yBO(3-∂), wherein 0≦x≦0.5, 0≦y≦0.5, and 0.8≦z≦1.1. In another embodiment, the cathode includes an electron-conducting phase that contains nickel oxide intermixed with magnesium oxide.

A method of forming a dielectric layer containing dielectric filler, which is excellent in film thickness uniformity, from a polyimide electrodeposition liquid containing dielectric filler. In particular, a method of forming a polyimide coating container dielectric filler on a surface of metallic material according to the electrodeposition coating technique, characterized in that as the dielectric filler, use is made of dielectric powder of perovskite structure in approximately spherical form which has an average particle diameter (D1A) of 0.05 to 1.0 μm and a weight cumulative particle diameter (D50), measured in accordance with the laser diffraction scattering type particle size distribution measuring method, of 0.1 to 2.0 μm and further exhibits an aggregation degree, in terms of D50 / D1a wherein D50 and D1a represent a weight cumulative particle diameter and an average particle diameter obtained by image analysis, respectively, of 4.5 or less.

Provided is a composite luminescent material. The composite luminescent material comprises: a matrix; and perovskite nanoparticles. The perovskite nanoparticles are dispersed in the matrix, wherein the mass ratio of the perovskite nanoparticles matrix to the perovskite nanoparticles is 1:(1-50).

There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1):(Bi,Ba)(M,Ti)O3  (1)in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.