The present invention discloses
rare earth-doped
semiconductor infrared radiation thick-film electronic paste and a preparation method therefor. The electronic paste comprises, in percentage by weight, 10%-90% of an organic vehicle and 10%-90% of a functional phase. The organic vehicle comprises, in percentage by weight, 50%-95% of an
organic solvent,1%-40% of a
thickening agent, and 0%-5% of an organic additive. The functional phase comprises, in percentage by weight, 40%-95% of a
rare earth-doped
infrared radiation semiconductor material, 5%-60% of a conductive material, and 0%-20% of a functional additive. According to the electronic paste, the selecting range of a base material is wide, the
heating temperature range is wide, the
heating efficiency is high, the temperature of a heating body itself is low, and the bidirectional
thermoelectric conversion can be achieved. The preparation method comprises: a, mixing the
thickening agent, the organic additive and the
organic solvent to prepare the organic vehicle; b, mixing and
grinding the organic vehicle and the functional phase to prepare the electronic paste; c, printing the electronic paste on a substrate by means of
screen printing, and performing curing or
sintering to form a film.