235 results about "Spin current" patented technology

A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

The invention relates to an electrospinning direct-writing closed-loop control system and a control method, which relate to electrospinning direct writing equipment. The invention provides the electrospinning direct-writing closed-loop control system which is capable of realizing the controllable adjustment of the electrospinning direct-writing nano fibre diameter and improves the jet injection stability of spinning and the uniformity of nano fibre diameter and the control method of the electrospinning direct-writing closed-loop control system. The system comprises a liquid storage tank, a liquid feeder, a spinning nozzle, a collecting plate, a weak current detector, a temperature sensor, a humidity sensor, a data collector, a control computer, a direct current high voltage power supply and an adjustable frame. The system establishes a fuzzy controller to obtain the jet injection state by detecting the spinning current, adjusts the applied voltage and the flow rate of the feeding liquid according to the change of the spinning current so as to avoid the influence of various interference factors and realize long time stable jet of the spinning jet flow. The set current of the fuzzy controller is adjusted to control the electrospinning direct-writing nano fibre diameter. The electrospinning direct-writing closed-loop control system is beneficial to improving the controllability of the electrospinning direct-writing nano fibre diameter and well promoting the industrialized application of the electrospinning direct-writing technology.

Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

The present invention has the purpose of providing an electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element that utilizes magnetization reversal based on pure spin current. The electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element of the present invention includes a first ferromagnetic metal layer with a varying magnetization direction; spin-orbit torque wiring that adjoins the first ferromagnetic metal layer and that extends in a second direction in a plane orthogonal to a first direction normal to the first ferromagnetic metal layer; and electric-current-generated magnetic field assist wiring that is arranged so as to be electrically insulated from the first ferromagnetic metal layer by an insulating layer and in which flows an electric current I0 for forming a magnetic field H0 that assists magnetization reversal of the first ferromagnetic metal layer.