A STT-RAM MTJ is disclosed with a MgO
tunnel barrier formed by a
NOX process, a CoFeB / FeSiO / CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin
scattering effect and increase dR / R. Good
write margin is achieved by modifying the
NOX process to afford a RA less than 10
ohm-μm2 and good read margin is realized with a dR / R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free
layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient
diameter to bridge the distance between upper and lower CoFeB
layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high
damping constant in the upper CoFeB free layer.