179results about How to "Increased polarization" patented technology

We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR / R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

The present invention provides various methods / systems of optical imaging of subsurface anatomical structures and biomolecules utilizing red and infrared radiant energy. Also provided are various applications of such methods / systems in medical diagnosis and treatment.

An undersampled microstrip array using multilevel and space-filling shaped patch elements based on a fractal geometry achieves within the same electrical area, the same directivity than can be obtained using conventional elements as square or circular-shaped patches. However, the number of elements for the fractal-based array is less, reducing the complexity of the feeding network and overall array. Mutual coupling can be reduced avoiding radiation pattern distortions. Higher gain than that obtained using classical patch elements within the same electrical can be achieved due to the less complexity in the feeding network.

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB / NCC / CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

The present invention relates to an anode material excellent in its charging and discharging characteristics and a secondary battery excellent in its charging and discharging cyclic characteristics. An anode active material is used for a nonaqueous electrolyte secondary battery including an anode having the anode active material, a cathode having a cathode active material and a nonaqueous electrolyte. The capacity of the anode is expressed by the sum of a capacity component obtained when light metal is doped and dedoped in an ionic state and a capacity component obtained when the light metal is deposited and dissolved. The light metal includes an anode base material capable of doping and dedoping the light metal in an ionic state and a fibrous material having an electric conductivity.

A bipolar, filter press-like electrochemical cell stack comprising a plurality of electrochemical cells, where each electrochemical cell is supplied with a gaseous anodic reactant and either supplied with a gaseous cathodic reactant or produces a gaseous cathodic product, and where each electrochemical cell avoids drying out the ion exchange membrane polymer electrolyte, avoids flooding at the cathode, facilitates recovery of liquid water at the anode, and reduces water losses from at least one of the electrodes. A water retention barrier is variously positioned, such as between a gas diffusion electrode and a fluid flow field. The barrier may be either: (i) a thin, gas permeable, liquid water impermeable membrane; (ii) a thin, porous sheet of material; or (iii) a thin, substantially solid sheet of material except for a plurality of small through-holes that penetrate from one side of the sheet to an opposing side of the same sheet. The barrier is advantageously used at the cathode and facilitates air cooling of the cell.

An illuminating device includes: a light source; a light guide plate which converts light emitted from the light source into a surface light ray and emits the surface light ray through a front surface of the light guide plate; and an optical sheet which changes a propagation direction of the surface light ray emitted from the light guide plate. The light source is arranged in end surface different from the front surface in the light guide plate. A polarization state converting structure to convert a polarization state of the light propagating through the light guide plate is provided in a surface opposing the front surface in the light guide plate. The polarization state converting structure contains an inclination plane having a ridge line in a direction different from a direction in parallel to the longitudinal direction of the end surface.

A VCSEL waveguide grating coupler is provided such that a first and second mirror are positioned to define a resonant cavity between them. The waveguide grating coupler further includes a waveguide having a first grating formed as a part of the waveguide to couple light of a first polarization mode into the waveguide. A second grating is formed on the waveguide grating coupler and is orthogonal to the first grating. The second grating is operative to enhance the light coupled to the waveguide by creating a loss difference between light of the first polarization mode and light of a second polarization mode, so that light of the first polarization mode lases preferentially within the VCSEL.

A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

A p well serving as a channel region of a MOSFET is formed on one side of an n− layer and an n+ drain region is formed on the other side. Above the n− layer, a plurality of first floating field plates are formed with a first insulating film interposed therebetween. A plurality of second floating field plates are formed thereon with a second insulating film interposed therebetween. Assuming that the thickness of the first insulating film is “a” and the distance between the first floating field plates and the second floating field plates in a direction of thickness of the second insulating film is “b”, a relation a>b is held.

Certain embodiments of the present invention provide a battery heating circuit, comprising a switch unit 1, a switching control module 100, a damping component R1, an energy storage circuit, and an energy superposition unit; the energy storage circuit is configured to connect with the battery to form a loop, and comprises a current storage component L1 and a charge storage component C1; the damping component R1, the switch unit 1, the current storage component L1, and the charge storage component C1 are connected in series; the switching control module 100 is connected with the switch unit 1, and is configured to control ON / OFF of the switch unit 1, so as to control the energy flowing between the battery and the energy storage circuit.

A Reflective Semiconductor Optical Amplifier (RSOA) for compensating for light loss in an optical link, an RSOA module for improving polarization dependency using the RSOA, and a Passive Optical Network (PON) for increasing economical efficiency and practical use of a bandwidth using the RSOA are provided. The PON includes a central office comprising a plurality of optic sources transmitting a downstream signal and a plurality of first receivers receiving an upstream signal; at least one optical network terminal (ONT) including a second receiver receiving the downstream signal and an RSOA which receives the downstream signal, remodulates the downstream signal into the upstream signal, and transmits the upstream signal in loopback mode; and a remote node interfacing the central office with the ONT. The upstream signal and the downstream signal are transmitted between the remote node and the ONT via a single optical fiber. The remote node includes an optical power splitter at its port connected to the ONT.

Certain embodiments of the present invention provide a battery heating circuit, comprising a switch unit (1), a switching control module (100), a damping component R1, an energy storage circuit, and an energy superposition unit, the energy storage circuit is configured to connect with the battery to form a loop, and comprises a current storage component L1 and a charge storage component C1; the damping component R1, the switch unit (1), the current storage component L1, and the charge storage component C1 are connected in series; the switching control module (100) is connected with the switch unit (1), and is configured to control ON / OFF of the switch unit (1), so as to control the energy flowing between the battery and the energy storage circuit; the energy superposition unit is connected with the energy storage circuit, and is configured to superpose the energy in the energy storage circuit with the energy in the battery when the switch unit (1) switches on and then switches off; the switching control module (100) is also configured to control the switch unit (1) to switch off after the first positive half cycle of current flow through the switch unit (1) after the switch unit (1) switches on, and the voltage applied to the switch unit (1) at the time the switch unit (1) switches off is lower than the voltage rating of the switch unit (1).

According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.

An antenna for radiating an electromagnetic field includes a ground plane, a first dielectric layer disposed on the ground plane, and a second dielectric layer disposed on the first dielectric layer. The antenna includes at least one feeding element embedded in the first dielectric layer and a radiating element extending from the feeding element. The radiating element is embedded within the first dielectric layer adjacent to the second dielectric layer. A beam steering element is embedded in the second dielectric layer and electromagnetically coupled to the radiating element. Embedding the beam steering element in the second dielectric layer and electromagnetically coupling the beam steering element to the radiating element allows the antenna to tilt a radiation beam to overcome a roof obstruction from a vehicle while maintaining acceptable gain, polarization, and directional properties for SDARS applications.

The invention relates to a lithium ion battery diaphragm. The lithium ion battery diaphragm comprises a polyolefin substrate and a composite coating, wherein the coating is connected with the polyolefin substrate through a binder, the coating is formed by stacking a plurality of inorganic particle layers, and each two adjacent inorganic particle layers of the coating are connected with each other through a binder; each inorganic particle layer consists of flaky inorganic particles, and the flaky inorganic particles are distributed in parallel or at a small angle in the coating. The invention also relates to a preparation method of the lithium ion battery diaphragm. The preparation method comprises the following steps: preparing flaky inorganic particles; screening first inorganic particles and second inorganic particles; preparing coating slurry; coating the polyolefin substrate with the coating slurry, and drying the polyolefin substrate with the coating to obtain a product. The lithium ion battery diaphragm is high in flatness, low in coarseness, low in water absorption rate, low inn coating expansion degree, capable of effectively reducing the natural crimpness of single-side coated diaphragm and capable of improving the assembling efficiency and rate of finished products of a laminated battery.

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB / NCC / CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.

A magneto-resistance effect element, including:a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.

A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Discussed are an organic light emitting display device and a method of manufacturing the same in which organic and inorganic films are formed on a polarization plate, and the polarization plate is attached to an organic light emitting panel so that the organic and inorganic films seal the organic light emitting panel, thereby achieving improved polarization and a simple sealing structure.

The invention provides compositions and methods of identifying and testing TGF- beta pathway agonists and antagonists, and in particular compositions comprising Mothers against DPP (MAD) proteins and related Smad polypeptides which exhibit sequence-specific DNA-binding activity. The invention also provides a novel DNA sequence (SEQ ID NO:19); (SEQ ID NO:20); (SEQ ID NO:21) that is bound with high affinity by Drosophila MAD protein. This protein is useful for identifying compounds that will enhance or interfere with MAD protein-DNA binding.

The present disclosure relates to thin film optical interference filters. The filters include a substrate and a plurality of alternating material layers deposited on the substrate. When operated at about 45° angle of incidence, the filters exhibit at least one of improved polarization splitting, edge steepness, bandpass bandwidth, and blocking, relative to conventional thin film interference filters.

An illuminating device includes: a light guide plate for outputting light, which enters the light guide plate from one side surface, from a front surface of the light guide plate; an optical sheet disposed on the front surface of the light guide plate; and a reflection sheet disposed on a rear surface of the light guide plate. The optical sheet includes prism arrays which are provided on a surface of the optical sheet opposite to the light guide plate, and each of which has at least two inclined surfaces and a ridge line extending in one direction. The light guide plate changes a polarization state of light that is reflected by the surface of the optical sheet, is transmitted through the light guide plate, is reflected by the reflection sheet, is transmitted through the light guide plate again, and then enters the optical sheet.

Methods of collecting, thawing, and extending the useful polarized life of frozen polarized gases include heating a portion of the flow path and / or directly liquefying the frozen gas during thawing. A polarized noble gas product with an extended polarized life product is also included. Associated apparatus such as an accumulator and heating jacket for collecting, storing, and transporting polarized noble gases include a secondary flow channel which provides heat to a portion of the collection path during accumulation and during thawing.

The production and usage of hyperpolarized 129Xenon which comprises providing solid xenon with either an internal (dissolved) or external (imbedded) nuclear spin relaxant, loading and positioning the solid xenon in a low temperature refrigerator operating in the range of 5 mK to 30 mK with a surrounding magnetic field of between about 10 and 20 Tesla enabling high xenon spin polarizations between about 10% and 50% to be obtained in a time of about 1-3 days owing to the properties of the relaxant, separating the xenon from the relaxant or otherwise rendering the relaxant inoperable after polarizing and thereby switching off further relaxation and insuring preservation of the polarization of the xenon in solid, liquid or gaseous form for storage or external use for long times, ranging from weeks to the order of minutes, depending on the usage conditions.