1789results about How to "Distance" patented technology

A system and method for imaging a sample are provided. In particular, a first combination of light and a second combination of light are received, in which a first cross correlation function is associated with the first combination and a second cross correlation function is associated with the second combination. Each of the first and the second combinations includes a first portion of light which is received from a reference arrangement and a second portion of light which is received from the sample, and a first relative position of the sample associated with the first combination is different than a second relative position of the sample associated with the second combination. In an exemplary embodiment of the present invention, the first cross correlation function is transformed into a first complex cross spectral density and the second cross correlation function is transformed into a second complex cross spectral density. Moreover, a third complex cross spectral density can be determined which is approximately an average of the first complex cross spectral density and the second complex cross spectral density.

Devices and methods for treating mitral regurgitation by reshaping the mitral annulus in a heart. One preferred device for reshaping the mitral annulus is provided as an elongate body having dimensions as to be insertable into a coronary sinus. The elongate body includes a proximal frame having a proximal anchor and a distal frame having a distal anchor. A ratcheting strip is attached to the distal frame and an accepting member is attached to the proximal frame, wherein the accepting member is adapted for engagement with the ratcheting strip. An actuating member is provided for pulling the ratcheting strip relative to the proximal anchor after deployment in the coronary sinus. In one preferred embodiment, the ratcheting strip is pulled through the proximal anchor for pulling the proximal and distal anchors together, thereby reshaping the mitral annulus.

A system and method for imaging a sample are provided. In particular, a first combination of light and a second combination of light are received, in which a first cross correlation function is associated with the first combination and a second cross correlation function is associated with the second combination. Each of the first and the second combinations includes a first portion of light which is received from a reference arrangement and a second portion of light which is received from the sample, and a first relative position of the sample associated with the first combination is different than a second relative position of the sample associated with the second combination. In an exemplary embodiment of the present invention, the first cross correlation function is transformed into a first complex cross spectral density and the second cross correlation function is transformed into a second complex cross spectral density. Moreover, a third complex cross spectral density can be determined which is approximately an average of the first complex cross spectral density and the second complex cross spectral density.

An undersampled microstrip array using multilevel and space-filling shaped patch elements based on a fractal geometry achieves within the same electrical area, the same directivity than can be obtained using conventional elements as square or circular-shaped patches. However, the number of elements for the fractal-based array is less, reducing the complexity of the feeding network and overall array. Mutual coupling can be reduced avoiding radiation pattern distortions. Higher gain than that obtained using classical patch elements within the same electrical can be achieved due to the less complexity in the feeding network.

An apparatus for repairing cystocele including an adjustable support member, a pair of superior support arms continuously knitted with said support member, and a pair of inferior support arms continuously knitted with said support member, wherein the distance between the pair of superior support arms and pair of inferior support arms can be increased or decreased by modifying the shape of the support member.

The present invention provides a vapor deposition device suitable for multiface cutting by using a large area board, having a high efficiency of utilizing an EL material and excellent in uniformity of a film, wherein a board 13 and a vapor deposition mask 14 are mounted above board holding means 12, an interval between a vapor deposition source holder 17 and an object to be deposited (board 13) is narrowed to be equal to or smaller than 30 cm, preferably, equal to or smaller than 20 cm, further preferably, 5 through 15 cm and in vapor deposition, the vapor deposition source holder 17 is moved in the X direction or Y direction in accordance with an insulating member (referred to also as bank, partition wall) 10 and a shutter 15 is opened and closed to thereby form a film.

A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.

Provided is a multi-beam laser drilling apparatus for drilling a workpiece, simultaneously at two positions while telecentric errors are suppressed, in which a conventional optical system in which galvanometer mirrors are used for a first laser beam, and a galvanometer-mirror system is located close to an fθ lens in order to prevent occurrence of telecentric error. A second laser beam which has been deflected by a second galvanometer-mirror system, transmits through a polarized beam mixers and is incident upon the first galvanometer-mirror system and the fθ lens, and accordingly, the workpiece is drilled simultaneously at two positions with the use of both first and second laser beams.

An apparatus for generating an overview image of a plurality of images comprises a storage unit and an image processor. The storage unit stores a plurality of processed images of the overview image and is able to provide the overview image containing the plurality of processed images at their assigned positions for displaying. The image processor determines feature points of a new image and compares the determined feature points of the new image with feature points of a stored processed image to identify common feature points and to obtain 3-dimensional positions of the common feature points. Further, the image processor determines common feature points located within a predefined maximum distance of relevance to a reference plane based on the 3-dimensional positions of the common feature points to identify relevant common feature points. Further, the image processor processes the new image by assigning the new image to a position in the overview image based on a comparison of an image information of each relevant common feature point of the new image with an image information of each corresponding relevant common feature point of the stored processed image without considering common feature points located beyond the predefined maximum distance of relevance to the reference plane.

A method of creating a zonal isolation above a target zone in an underground wellbore comprises: inserting a slurry injection tubing into the wellbore; arranging within an annular space surrounding said tubing an particle accumulation means, such as an expandable screen or an area where the slurry velocity is reduced; and pumping a slurry comprising a carrier fluid and granular material down via the slurry injection tubing and the target zone and then up into the annular space, such that at least some granular material accumulates and forms an elongate zonal isolation in the annular space between the target zone and the particle accumulation means, which zonal isolation is removable and exerts a limited radial force to the surrounding formation, thereby reducing the risk of formation damage.

A battery pack having a secondary battery is disclosed. The battery pack comprises at least one voltage converter; and switching means for switching an operation mode of the voltage converter to one of a charging mode and a discharging mode, in the charging mode, a charging voltage being output to the secondary battery, in the discharging mode, a voltage of the secondary battery being converted into a predetermined discharging voltage and the converted voltage being output.

A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.