12221 results about "Rare-earth element" patented technology

A method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the nitrided high-k film on the substrate by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. The oxygen-containing film and the nitrogen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table, and optionally aluminum, silicon, or aluminum and silicon. According to one embodiment, the method includes forming a nitrided hafnium based high-k film. The nitrided high-k film can be formed by atomic layer deposition (ALD) or plasma-enhanced ALD (PEALD).

Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.

The invention relates to an aluminum alloy material which is characterized in that the aluminum alloy material comprises the following components by weight percent: 0.16-1.2% of Fe, 0.001-0.8% of Cu, 0.001-0.8% of Mg, 0.001-0.8% of Zn, 0.001-0.8% of Ca, 0.001-1.0% of rare-earth elements, a trace amount of strontium, titanium, boron, nickel, chromium, zirconium, vanadium, beryllium, cobalt, lead, tin, bismuth, molybdenum, silver, indium, niobium and barium and the balance of aluminum. The alloy has excellent mechanical strength, processing performance and corrosion resistance and is suitable for the cable armored sheath.

A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE—TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.

To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2 / 3)X+(4 / 3)Y):R or LXMYOZN((2 / 3)X+(4 / 3)Y−(2 / 3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth / alkaline-earth-metal / transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth / alkaline-earth-metal / transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.

A method for preparing a rare earth permanent magnet material comprising the steps of:disposing a powder comprising one or more members selected from an oxide of R2, a fluoride of R3, and an oxyfluoride of R4 wherein R2, R3 and R4 each are one or more elements selected from among rare earth elements inclusive of Y and Sc on a sintered magnet form of a R1—Fe—B composition wherein R1 is one or more elements selected from among rare earth elements inclusive of Y and Sc, andheat treating the magnet form and the powder at a temperature equal to or below the sintering temperature of the magnet in vacuum or in an inert gas.The invention offers a high performance, compact or thin permanent magnet having a high remanence and coercivity at a high productivity.

Disclosed is a titanium carbonitride based metal ceramic material based on a high-entropy alloy binder phase. The binder phase of the titanium carbonitride based metal ceramic material is high-entropy alloy, the hard phase of the titanium carbonitride based metal ceramic material is carbonitride solid solution, the high-entropy alloy binder phase includes at least four of ferrum, cobalt, nickel, chromium, aluminum, vanadium, titanium, copper, zirconium, molybdenum, manganese and rare earth elements, and the molar content ratio of each element ranges from 5% to 35%. In a preparation method, the titanium carbonitride based metal ceramic material based on the high-entropy alloy binder phase comprises raw materials including, in weight percent, 3-30% of the high-entropy alloy binder phase, 0-30% of second carbide powder and the balance carbonitride solid solution powder, the carbonitride solid solution powder includes at least one of Ti (Cx, N1-x), (Ti, M1...) and (Cx, N1-x), the M1 component of the (Ti, M1...) and (Cx, N1-x) includes at least one of W, Mo, Ta, Nb, V, Cr, Zr, Hf, Y and lanthanide, and 0<x<1 in the Ti (Cx, N1-x), (Ti, M1...) and (Cx, N1-x). The preparation method includes the process steps of (1) ball-milling mixing, (2) forming and (3) low-pressure sintering.

A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1-50 parts by weight of a first silicon nitride powder having a particle ratio of 30-100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2-10 μm, and an aspect ratio of 10 or less, with 99−50 parts by weight of α-silicon nitride powder having an average particle size of 0.2-4 μm; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.

An object of the present invention is to provide an infrared-shielding nanoparticle dispersion that has a property whereby visible light is adequately transmitted, and light in the near-infrared region is adequately shielded; an infrared-shielding body manufactured using the infrared-shielding nanoparticle dispersion; a method for manufacturing infrared-shielding nanoparticles that are used in the infrared-shielding nanoparticle dispersion; and infrared-shielding nanoparticles manufactured using the method for manufacturing infrared-shielding nanoparticles. The present invention is a method for manufacturing infrared-shielding nanoparticle dispersion obtained by dispersing infrared-shielding nanoparticles in a medium, an infrared-shielding body manufactured by using the infrared-shielding nanoparticle dispersion, and infrared-shielding nanoparticles used in the infrared-shielding nanoparticle dispersion, wherein the infrared-shielding nanoparticles include a substance expressed by the general formula MXAYW(1-Y)O3 (where M is one or more elements selected from H, He, alkali metals, alkaline-earth metals, rare earth elements, Mg, Zr, Cr, Mn, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Sb, B, F, P, S, Se, Br, Te, Ti, Nb, V, Mo, Ta, Re, Be, Hf, Os, Bi, and I; A is one or more elements selected from Mo, Nb, Ta, Mn, V, Re, Pt, Pd, and Ti; W is tungsten; O is oxygen; 0<X≦1.2; 0<Y≦1).

Disclosed is a method of preparing a positive active material for a rechargeable lithium battery including adding first and second compounds to a solvent to prepare an acidic solution with a pH from 0.01 to 3, the first compound including an element that is capable of forming a double bond with an oxygen of a lithium metal oxide, and the second compound including at least one element selected from the group consisting of alkali metals, alkali earth metals, group 13 elements, group 14 elements, transition metals and rare-earth elements; adding a lithium-containing compound to the acidic coating solution to coat the lithium-containing compound; and heat-treating the coated lithium-containing compound to form a surface-treatment layer comprising a compound represented by the formula MXOk where M is an element selected from the group consisting of alkali metals, alkali earth metals, group 13 elements, group 14 elements, transition metals, rare-earth elements and combinations thereof; X is an element that is capable of forming a double bond with oxygen; and k is an integer from 2 to 4.