2324results about "Rare earth metal compounds" patented technology

A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxide or an aluminate. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxide or aluminate layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxynitride or aluminum oxynitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Methods of forming conformal low temperature gate oxides on a HV I / O and a core logic and the resulting devices are provided. Embodiments include providing a HV I / O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfOx layer over the second silicon oxy-nitride layer and ILs.

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate.

An all-solid-state lithium ion secondary battery containing a novel garnet-type oxide serving as a solid electrolyte. The garnet-type lithium ion-conducting oxide is one represented by the formula Li5+XLa3(ZrX, A2-X)O12, wherein A is at least one selected from the group consisting of Sc, Ti, V, Y, Nb, Hf, Ta, Al, Si, Ga, Ge, and Sn and X satisfies the inequality 1.4≦X<2, or is one obtained by substituting an element having an ionic radius different from that of Zr for Zr sites in an garnet-type lithium ion-conducting oxide represented by the formula Li7La3Zr2O12, wherein the normalized intensity of an X-ray diffraction (XRD) pattern with a diffraction peak, as normalized on the basis of the intensity of a diffraction peak, is 9.2 or more.

A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an "active volume" through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the "active volume" at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta-potentials.

The present invention relates to methods for the preparation of inorganic nanoparticles capable of fluorescence, wherein the nanoparticles consist of a host material that comprises at least one dopant. The synthesis of the invention in organic solvents allows to gain a considerably higher yield compared to the prior art synthesis in water. All kinds of objects can advantageously be marked and reliably authenticated by using an automated method on the basis of a characteristic emission. Further, the size distribution of the prepared nanoparticles is narrower which renders a subsequent size-selected separation process superfluous.

Fused abrasive particles comprising eutectic material comprising Al2O3-MgO-REO eutectic. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

Metal oxide catalysts comprising various dopants are provided. The catalysts are useful as heterogenous catalysts in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons such as ethane and ethylene. Related methods for use and manufacture of the same are also disclosed.

Liquid feed flame spray pyrolysis of solutions of a metal oxide precursor which is an alkoxide or C1-6 carboxylate and at least one second metal oxide precursor and / or second metal compound dissolved in oxygenated solvent by combustion with oxygen lead to the formation of sub-micron mixed-metal oxide powders not accessible by other processes or by the pyrolysis of metal chlorides or nitrates. The powders have numerous uses in advanced materials applications including particulate solid state lasers, advanced ceramic materials, and as catalysts in organic synthesis and automobile exhaust systems.

Liquid feed flame spray pyrolysis of solutions of a metal oxide precursor which is an alkoxide or C1-6 carboxylate and at least one second metal oxide precursor and / or second metal compound dissolved in oxygenated solvent by combustion with oxygen lead to the formation of sub-micron mixed-metal oxide powders not accessible by other processes or by the pyrolysis of metal chlorides or nitrates. The powders have numerous uses in advanced materials applications including particulate solid state lasers, advanced ceramic materials, and as catalysts in organic synthesis and automobile exhaust systems.

The invention is directed to a solid ion conductor which has a garnet-like crystal structure and has the stoichiometric composition L7+xAxG3−xZr2O12, whereinL is in each case independently a monovalent cation,A is in each case independently a divalent cation,G is in each case independently a trivalent cation,0≦x≦3 andO can be partly or completely replaced by divalent or trivalent anion.

Methods to manufacture nanoscale particles comprising metals, alloys, intermetallics, ceramics are disclosed. The thermal energy is provided by plasma, internal energy, heat of reaction, microwave, electromagnetic, direct electric arc, pulsed electric arc and / or nuclear. The process is operated at some stage above 3000K and at high velocities. The invention can be utilized to prepare nanopowders for nanostructured products and devices such as ion conducting solid electrolytes for a wide range of applications, including sensors, oxygen pumps, fuel cells, batteries, electrosynthesis reactors and catalytic membranes.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

Perovskite-type catalyst consists essentially of a metal oxide composition is provided. The metal oxide composition is represented by the general formula A.sub.1-x B.sub.x MO.sub.3, in which A is a mixture of elements originally in the form of single phase mixed lanthanides collected from bastnasite; B is a divalent or monovalent cation; M is at least one element selected from the group consisting of elements of an atomic number of from 22 to 30, 40 to 51, and 73 to 80; and x is a number defined by 0.ltoreq.x<0.5.

The present invention relates to a phosphor that satisfies requirements (1) to (3):(1) the phosphor satisfies Formula [2] and / or Formula [3]:85≦{R455(125) / R455(25)}×100<110  [2]92≦{R405(100) / R405(25)}×100<110  [3]wherein R455(125) represents an emission peak intensity when the phosphor is excited by light having a peak wavelength of 455 nm at 125° C.,(2) the emission peak wavelength is in the range of 570 nm to 680 nm, and(3) the full width at half maximum of an emission peak is 90 nm or less.The phosphor of the present invention has a high luminous efficiency and emits light of orange to red with high luminance. The use of the phosphor makes it possible to produce a light-emitting device, an illumination apparatus, and an image display, having a high efficiency and excellent color rendering properties.

Spherical particles of a rare earth (inclusive of yttrium)-containing compound and having a breaking strength of 10-300 MPa and an average particle diameter of 10-80 μm are suitable for plasma spraying.

Disclosed is a positive active material for a rechargeable lithium battery. The positive active material includes at least one compound represented by formulas 1 to 4 andl a metal oxide or composite metal oxide layer formed on the compound. <table-cwu id="TABLE-US-00001"> <number>1< / number> <tgroup align="left" colsep="0" rowsep="0" cols="3"> <colspec colname="OFFSET" colwidth="42PT" align="left" / > <colspec colname="1" colwidth="77PT" align="left" / > <colspec colname="2" colwidth="98PT" align="center" / > <row> <entry>< / entry> <entry>< / entry> < / row> <row> <entry>< / entry> <entry namest="OFFSET" nameend="2" align="center" rowsep="1">< / entry> < / row> <row> <entry>< / entry> <entry>LixNi1-yMnyF2< / entry> <entry>(1)< / entry> < / row> <row> <entry>< / entry> <entry>LixNi1-yMnyS2< / entry> <entry>(2)< / entry> < / row> <row> <entry>< / entry> <entry>LixNi1-y-zMnyMzO2-aFa< / entry> <entry>(3)< / entry> < / row> <row> <entry>< / entry> <entry>LixNi1-y-zMnyMzO2-aSa< / entry> <entry>(4)< / entry> < / row> <row> <entry>< / entry> <entry namest="OFFSET" nameend="2" align="center" rowsep="1">< / entry> < / row> < / tgroup> < / table-cwu> (where M is selected from the group consisting of Co, Mg, Fe, Sr, Ti, B, Si, Ga, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, U, Np, IPu, Am, Cm, Bk, Cf, Es, Fm, Md, No and Lr, 0.95<=x<=1.1, 0<=y<=0.99, 0<=,z<=0.5, and 0<=a<=0.5)

Fused abrasive particles comprising eutectic material. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

The invention provides a multi-shell-layer metal oxide hollow ball and a preparation method thereof. A hydrothermal method is used for preparing a carbon ball template; metal salts are dissolved in carbon ball suspension liquid, and the gradient distribution, the depth and the number of metal salts entering carbon balls are controlled through regulating adsorption conditions such as metal salt concentration, solution pH value, soaking temperature and time and the like; and the heat treatment is carried out on the carbon balls adsorbing metal ions, and the multi-shell-layer metal oxide hollow ball can be obtained. The shell-layer of the hollow ball prepared by the method is formed by accumulating nanometer crystal particles of metal oxides, the shell layer number can be regulated and changed from two to four, and both the size of the hollow ball and the thickness of the shell layers are controllable. The method provided by the invention is simple and is easy to implement, the controllability is high, the pollution is little, the cost is low, and in addition, the general applicability is realized. The prepared product has a hollow structure and the shell layers with the thickness inthe nanometer level, simultaneously, the internal space can be effectively utilized through the multilayer structure, and the multi-shell-layer metal oxide hollow ball is applied to gas sensitivity and photocatalysis and has the more excellent performance through being compared with the traditional nanometer material and a single-layer hollow ball.

Polycrystalline materials of macroscopic size exhibiting Single-Crystal-Like properties are formed from a plurality of Single-Crystal Particles, having Self-Aligning morphologies and optionally ling morphology, bonded together and aligned along at least one, and up to three, crystallographic directions.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MIIl-pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

A method and apparatus for producing metastable nanostructured materials employing a ceramic shroud surrounding a plasma flame having a steady state reaction zone into which an aerosol or liquid jet of solution precursor or powder material is fed, causing the material to be pyrolyzed, melted, or vaporized, followed by quenching to form a metastable nanosized powder that has an amorphous (short-range ordered), or metastable microsized powder that has a crystalline (long-range ordered) structure, respectively.

Improved methods for the extraction or dissolution of metals, metalloids or their oxides, especially lanthanides, actinides, uranium or their oxides, into supercritical solvents containing an extractant are disclosed. The disclosed embodiments specifically include enhancing the extraction or dissolution efficiency with ultrasound. The present methods allow the direct, efficient dissolution of UO2 or other uranium oxides without generating any waste stream or by-products.

The invention discloses a preparation method of a graphene inorganic nanocomposite, which comprises the following steps: firstly, adding grapheme into the aqueous solution of soluble inorganic salt, and scattering the grapheme by ultrasound; then adding precipitant under the mixing condition, centrifuging at a high speed and heat treating the obtained mixed liquor, and finally obtaining the graphene inorganic nanocomposite. The composite has high surface area, adjustable diameter of nano particles, and important application value on catalysis, stored energy, drug delivery and the like.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

Fused abrasive particles comprising eutectic material comprising Al2O3-MgO-Y2O3 eutectic. The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasives, and abrasive brushes.

Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.