95 results about "Deposition pressure" patented technology

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or oxygen, the threshold voltage, sub threshold slope, and mobility of the TFT may be negatively impacted. By controlling the ratio of the flow rates of the nitrogen, oxygen, and hydrogen containing gases, the performance of the TFT may be optimized. Additionally, the power density, capping layer deposition pressure, and the temperature may also be controlled to optimize the TFT performance.

Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence time, tau (ms) of the raw gas in a film deposition chamber, which is defined as tau (ms)=78.9xVxP / M, in which V is a volume (cm3) of the deposition chamber, P is a deposition pressure (Torr), and M is a total flow rate (sccm) of the raw gas, satisfies tau<40. The method permits the formation of a good-quality microcrystalline silicon film at low cost.

A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and / or a flow rate of a reaction gas in the range of 0-1 slm.

A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or oxygen, the threshold voltage, sub threshold slope, and mobility of the TFT may be negatively impacted. By controlling the ratio of the flow rates of the nitrogen, oxygen, and hydrogen containing gases, the performance of the TFT may be optimized. Additionally, the power density, capping layer deposition pressure, and the temperature may also be controlled to optimize the TFT performance.

A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and / or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.

A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, boron source gas, and a carrier gas is fed into the deposition chamber. The carrier gas is fed into the deposition chamber at a rate so that the residence of the carrier gas in the deposition chamber is less then or equal to 3 seconds or alternatively has a velocity of at least 4 inches / sec. In another embodiment of forming a boron doped amorphous for polycrystalline silicon film a substrate is placed into a deposition chamber. The substrate is heated to a deposition temperature between 580-750° C. and the chamber pressure reduced to a deposition pressure of less than or equal to 50 torr. A silicon source gas is fed into the deposition at a rate to provide a silicon source gas partial pressure of between 1-5 torr. Additionally, a boron source gas is fed into the deposition chamber at a rate to provide a boron gas partial pressure of between 0.005-0.05 torr.

A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

An anti-deposition pressure atomization nozzle is characterized in that a nozzle inner cavity is separated into a water inlet chamber and a cyclone atomization chamber through a cyclone piece. The water inlet chamber is connected with the a water inlet pipe. The cyclone atomization chamber is provided with a atomization nozzle body. The bottom of the water inlet chamber is oblique. The horizontal height of inlet of the water inlet chamber is lower than the height of the outlet of the water inlet chamber. A plurality of liquid distribution holes or grooves which are evenly distributed are formed in the cyclone piece. The water inlet chamber is communicated with the cyclone atomization chamber through the liquid distribution holes or grooves. The lowest point of each liquid distribution hole or groove is not lower than the highest point of the bottom of the water inlet chamber. One side, facing the cyclone atomization chamber, of the cyclone piece is provided with a tangential slot which is communicated with the distribution holes or grooves. The anti-deposition pressure atomization nozzle has the advantages that pressurized liquid enters the tangential slot of the cyclone piece from the water inlet chamber through the liquid distribution holes or grooves, the liquid is fed into the cyclone atomization chamber in a high-speed tangential manner, and the liquid rotating at high speed leaves the nozzle and then dispersed to form droplet groups of certain particle size; the anti-deposition pressure atomization nozzle is simple in structure, less prone to deposition and blocking, convenient to machine and manufacture, good in atomizing effect, and low in energy loss.

A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, boron source gas, and a carrier gas is fed into the deposition chamber. The carrier gas is fed into the deposition chamber at a rate so that the residence of the carrier gas in the deposition chamber is less then or equal to 3 seconds or alternatively has a velocity of at least 4 inches / sec. In another embodiment of forming a boron doped amorphous for polycrystalline silicon film a substrate is placed into a deposition chamber. The substrate is heated to a deposition temperature between 580-750° C. and the chamber pressure reduced to a deposition pressure of less than or equal to 50 torr. A silicon source gas is fed into the deposition at a rate to provide a silicon source gas partial pressure of between 1-5 torr. Additionally, a boron source gas is fed into the deposition chamber at a rate to provide a boron gas partial pressure of between 0.005-0.05 torr.

A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposition system, whereby the substrate is heated to a deposition temperature in a first gaseous atmosphere. Thereafter, the first gaseous atmosphere is displaced by a second gaseous atmosphere, and the pressure is adjusted to a deposition pressure. The second gaseous atmosphere comprises a gaseous composition that is substantially the same as the carrier gas utilized to transport film precursor vapor to the substrate and the optional dilution gas utilized to dilute the carrier gas and film precursor vapor.

A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposition system, whereby the substrate is heated to a deposition temperature in a first gaseous atmosphere. Thereafter, the first gaseous atmosphere is displaced by a second gaseous atmosphere, and the pressure is adjusted to a deposition pressure. The second gaseous atmosphere comprises a gaseous composition that is substantially the same as the carrier gas utilized to transport film precursor vapor to the substrate and the optional dilution gas utilized to dilute the carrier gas and film precursor vapor.

A method for the formation of a refractory metal nucleation layer (e.g., a tungsten nucleation layer) on a semiconductor device substrate that includes first depositing a metallic barrier layer (e.g., a titanium-nitride barrier layer) on the substrate. Next, the metallic barrier layer is exposed to a silicon-containing gas (e.g., monosilane) to form a layer of silicon (e.g., a monolayer of silicon) on the metallic barrier layer. The layer of silicon is then exposed to a refractory metal-containing gas (e.g., WF6) in a manner such that the refractory metal-containing gas undergoes a reduction reaction with the layer of silicon. The result of this reaction is the formation of a refractory metal layer (e.g., a tungsten metal layer) on the metallic barrier layer. Subsequently, an alternating exposure of the refractory metal layer to the silicon-containing gas and the refractory metal-containing gas is conducted. This alternating exposure deposits additional refractory metal on the refractory metal layer in order to form a refractory metal nucleation layer. Processes according to the present invention employ a relatively high pressure (i.e., between 40 and 300 Torr) during formation of the tungsten nucleation layer. The relatively high pressure facilitates fast reactions and temperature stabilization during formation of the refractory metal nucleation layer and, thus, a high throughput process. In addition, the process can be combined with a conventional tungsten core layer deposition conducted at a relatively high pressure without the need to expend process time cycling between two different deposition pressures, thus providing a high effective throughput.

A method for manufacturing phase change memory and a method for forming a phase change layer in the phase change memory are provided in the present invention. The method for manufacturing the phase change memory includes providing a bottom layer comprising a germanium (Ge) bivalent first precursor forming the phase change layer onto it. The phase change layer may be formed by one of MVCOD, cyclic-CVD or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and / or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350 DEG C., and the supply rate of the reaction gas may range from about 0-1 slm.