1134 results about "Te element" patented technology

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and / or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.

Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

The invention discloses a technology for extracting tellurium from copper anode slime, which is characterized by comprising the following steps: (1) the copper anode slime is put into a sulfuric acid solution, oxygen is introduced into the sulfuric acid solution for oxidation sulfuric acid leaching; solid-liquid separation is carried out to obtain leachate containing copper and tellurium; and the leaching process being finished in a closed high-pressure device; (2) copper powder is added into the leachate to remove silver or selenium in the leachate by substitution, and the solid-liquid separation is carried out; (3) sulfur dioxide is introduced into the leachate obtained from the step (2) to precipitate the tellurium by reduction, and the solid-liquid separation is carried out to obtain crude tellurium; and (4) the crude tellurium is processed according to a conventional method to extract pure tellurium. The technology adopts one-section oxidation acid leaching to leach the copper and tellurium out, copper powder to remove the impurities of silver, selenium and the like by substitution, and sulfur dioxide to precipitate the tellurium by reduction (obtaining tellurium dioxide), and the tellurium dioxide precipitation is alkali-dissolved and then electrolyzed to obtain the tellurium, therefore, the flow is simple, the consumption of the copper powder is remarkably reduced, and the simplification of the technology is beneficial to improve the recovery ratio of the tellurium, which can achieve more than 90 percent.

The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

An improved catalyst comprising a noble metal and tellurium at the surface of a carbon support is provided. Also provided are novel methods for preparing such catalysts and novel processes for the use of such catalysts in liquid phase oxidation reactions, particularly the oxidation of N-(phosphonomethyl)iminodiacetic acid or a salt thereof.

This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium / antimony / tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

A phosphor and a method of deposition. The phosphor comprises a composition of the formula M'aBa1-aM''2M'''4':RE, where M' is at least one element selected from magnesium and calcium, M'' is at least one element selected from aluminum, gallium and indium, M''' is at least one element selected from sulphur, selenium and tellurium, RE is at least one rare earth element, especially europium or cerium, and 0<a<1. Deposition is preferably by dual source electron beam deposition. The phosphor may be annealed. The phosphor provides a high luminosity blue emission that does not require an optical filter to achieve acceptable colour coordinates for the blue sub-pixel element for a full colour thin film or thick film electroluminescent display. The blue sub-pixel pixel performance meets the luminosity and colour temperature specifications for current generation cathode ray tube displays.