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33 results about "GeSbTe" patented technology
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GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 10⁶ cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C.
Method of fabricating a thin film
InactiveUS20060172083A1Solid-state devicesSemiconductor/solid-state device manufacturingHydrogenChemical reaction
Methods of fabricating a thin film. An example method includes forming a GeSbTe thin film on a surface of a substrate by chemically reacting a first precursor including germanium (Ge), a second precursor including antimony (Sb), and a third precursor including tellurium (Te) in a reaction chamber and processing the surface of the GeSbTe thin film with hydrogen plasma. Another example method includes injecting at least one precursor into a reactor chamber and depositing the at least one precursor onto a substrate within the reactor chamber using a chemical vapor deposition process so as to form the thin film.
Owner:SAMSUNG ELECTRONICS CO LTD
Phase change memory materials, devices and methods
InactiveUS20070181867A1Weaken energyImprove erasabilitySolid-state devicesSemiconductor/solid-state device manufacturingPhase-change memoryLanthanide
A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.
Owner:UNIV OF SOUTHAMPTON
Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material
ActiveCN102800808ARegulated contentAchieve High Density StorageElectrical apparatusVacuum evaporation coatingPhase-change memoryHigh density
The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Thin film structure for reducing laser direct writing photo-etching point or line width and its preparation method
InactiveCN101101451AReduce etch pointFacilitated DiffusionPhotomechanical exposure apparatusMicrolithography exposure apparatusEtchingSemiconductor materials
The invention relates to a thin film structure reducing laser direct-write photoetching point or line width and the preparing method. And the thin film structure comprises inorganic phase-transition thin film layer and buffer layer, where the inorganic phase transition thin film layer is composed of AgInSbTe or GeSbTe or SbTe, the buffer layer is made of high heat conductivity metal or semiconductor. And the thin film structure is made by DC magnetic controlled sputtering process and has advantages of simple structure, process easy to control, low substrate requirements, etc. and the test proves that it can obviously reduce the size of laser direct-write photoetching point and line width.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor
InactiveCN101093873AHigh crystallinityImprove surface topographySolid-state devicesSemiconductor/solid-state device manufacturingRandom access memoryOptoelectronics
The present invention discloses a method for manufacturing GeSbTe film with good crystalline and good surface appearance on non-crystal material layer, a method for manufacturing phase change random access memory using the GeSbTe film manufacturing method, and phase change random access memory. The GeSbTe film manufacturing method includes the following operations: to obtain seed crystal layer formed from Ge, Sb, Te, Sb2Te3 or Ge doped Sb, by supplying one or two kinds selected from set composed of Ge precursor, Sb precursor and Te precursor to the non-crystal material layer upper surface; and GeSbTe film is formed by supplying Ge precursor, Sb precursor and Te precursor to the seed crystal layer upper surface.
Owner:SAMSUNG ELECTRONICS CO LTD
Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
InactiveUS20140133222A1Low erasabilityReduce switchingRecord information storageDigital storagePhase-change memoryPhysical chemistry
Owner:UNIV OF SOUTHAMPTON
Novel GeSbTe compound thermoelectric material having high concentration vacancy and preparation method thereof
InactiveCN108735888AReduce carrier concentrationReduce concentrationThermoelectric device manufacture/treatmentThermoelectric device junction materialsHigh concentrationState of art
The invention relates to a novel GeSbTe compound thermoelectric material having a high concentration vacancy and a preparation method thereof, wherein the thermoelectric material has a chemical formula of Ge1-xSb2x / 3Te, x is greater than 0 and less than or equal to 0.14; by using the high purity element as raw material, the novel GeSbTe compound thermoelectric material is obtained through grindinginto powder, vacuum hot pressing sintering and slow cooling after vacuum encapsulation, high temperature melting, and annealing heat treatment by dosing according to the stoichiometric ratio in the chemical formula. Compared with the prior art, the introduction of cationic vacancies enables simultaneous regulation of carrier concentration and lattice thermal conductivity. This simple and controllable technique may be widely applied to various thermoelectric materials, especially the materials with a large number of intrinsic defects, which provides a new approach to improving thermoelectric performance.
Owner:TONGJI UNIV
Thin-film device based on GeSbTe phase-change material
ActiveCN106374045AImprove thermal stabilityAvoid influenceElectrical apparatusGrapheneThermal stability
The invention discloses a thin-film device based on a GeSbTe phase-change material. The thin-film device comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sedimented and laminated on the substrate layer in sequence; the first GeSbTe material layer is an ion-doped GeSbTe phase-change material layer; and the second GeSbTe material layer is a pure-phase GeSbTe phase-change material. The thin-film device based on the GeSbTe phase-change material disclosed by the invention has the characteristics of high heat stability, good consistency, high phase-change speed and long service life.
Owner:GUANGDONG UNIV OF PETROCHEMICAL TECH
Manufacturing method of semiconductor memory device
InactiveUS20100015755A1Good data retaining propertyHigh yieldSolid-state devicesSemiconductor/solid-state device manufacturingSputteringIn situ crystallization
In a step of forming an InGeSbTe film which contains GeSbTe made of germanium (Ge), antimony (Sb) and tellurium (Te) as its base material and to which indium (In) is added, an InGeSbTe film is formed by sputtering on a semiconductor substrate while keeping a temperature of the semiconductor substrate between an in-situ crystallization temperature of GeSbTe serving as the base material and an in-situ crystallization temperature of InGeSbTe. As a result, it is possible to suppress the failure that the phase separation occurs in the InGeSbTe film during the following manufacturing process.
Owner:RENESAS ELECTRONICS CORP
Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
InactiveUS8624215B2Low erasabilityReduce switchingSolid-state devicesRecord information storageCompound aPhase-change memory
A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.
Owner:UNIV OF SOUTHAMPTON
Sulphurs phase-change material chemically machinery polished non-abrasive polishing liquid and its use
ActiveCN100335581CAchieve global flatteningMeet high flatPolishing compositionsResistSurface-active agents
The invention relates to a polishing fluid without abrasive for chemical mechanical polishing(CMP)of sulphur system compound phase-changing film material GeSbTe and its application in preparation of electric applicance phase-changing memorizer. The CMP polishing fluid without abrasive is comprised of oxidant, sequestrant, pH regulator resist, surface active agent, defoamer and bactericide and solvent,it has less hurt,convenient cleaning,no corrosion to equipment and no pollution to the environment,mainly applied in preparation of CMP of the key material (GexSbyTe)for phase-chaning memorizer. Using the method above to clear away too much phase-changing film material (GexSbyTe)(x and y are not 0 at the same time )for preparation of phase-changing memorizer of electric appliance is simple and convenient.
Owner:SHANGHAI XINANNA ELECTRONICS TECH
Method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on magnetic material/GeSbTe/substrate heterostructure
InactiveCN108428790AAchieve precise positioningAdjustable thicknessGalvano-magnetic device manufacture/treatmentMagnetic storageCoupling
The invention provides a method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on a magnetic material / GeSbTe / substrate heterostructure, and belongs to the technical field of composite storage devices. The magnetic material / GeSbTe / substrate heterostructure is prepared by using a magnetron sputtering coating instrument, then the heterostructure is irradiated by the ultraviolet laser with a short wavelength, the input energy of the laser is controlled to make a GeSbTe thin film undergo phase transition (crystallization or amorphization) and a magnetic material thin film not undergo phase transition, the volume effect, produced due to the phase transition, of the GeSbTe thin film induces the magnetic domain of the magnetic material thin film to produce deflection which can be effectively controlled, meanwhile, the phase transition and the magnetic domain deflection are reversible, therefore, the laser can act on and control the GeSbTe thin film and the magnetic material thin film at the same time, and the coupling composite storage of magnetic storage and phase-transition optical storage is expected to be achieved.
Owner:BEIJING UNIV OF TECH
Methods and systems relating to optical waveguide tapers
ActiveUS9829629B2Reduce lossesReduce restrictionsCoupling light guidesSmall footprintSilicon dioxide
Photonic integrated circuits required connection to germanium doped silica cored optical fibers or silica cored and fluorine doped silica cladding optical fibers which have low index contrast and large mode field diameters. However, the optical waveguide within a photonic integrated circuit such as formed using silicon-on-insulator or compound semiconductors tends to be high index contrast and small mode field diameter. Accordingly, it is necessary to implement adiabatic waveguide tapers with a high coupling efficiency and small footprint in order to couple into the photonic integrated circuits to / from the optical fiber. Prior art tapers have been generally high loss and absorb valuable die footprint. In contrast the inventors demonstrate a small low loss waveguide taper designed using a methodology they refer to a “constant loss”.
Owner:MCGILL UNIV
Ge/Sb-type superlattice phase-change thin film material for high-speed and low-power phase-change memory and preparation method thereof
ActiveCN104934533BImprove thermal stabilitySmall grain sizeMaterial nanotechnologyElectrical apparatusPhase-change memoryVoltage pulse
Owner:JIANGSU UNIV OF TECH
High-performance GeSbTe-based thermoelectric material preparation method
ActiveCN107293637AReduce carrier concentrationRetain structureThermoelectric device manufacture/treatmentThermoelectric device junction materialsFine structureRoom temperature
The invention discloses a high-performance GeSbTe-based thermoelectric material preparation method. The method comprises the following steps: 1) with Ge, Sb and Te elements as raw materials, each raw material is weighed according to a stoichiometric ratio, melting treatment is carried out, furnace cooling to the room temperature is carried out, and an ignot body product is obtained; 2) the obtained ignot body product is subjected to induction melting and melt spinning to obtain a thin strip product; 3) the thin strip product obtained in the step 2) is grinded, spark plasma sintering is then carried out, and the GeSbTe-based thermoelectric material is obtained. Through carrying out Sb doping on GeTe, the carrier concentration of the GeSbTe-based thermoelectric material is effectively reduced, the melt sintering method and the melt spinning technology are combined, on the basis of ensuring the GeSbTe-based system structure and the component information, microstructure regulation is carried out further through the melt spinning technology, and the GeSbTe-based thermoelectric material with a fine structure, stable component and excellent thermoelectric material can be prepared.
Owner:WUHAN UNIV OF TECH
Binary and ternary metal chalcogenide materials and method of making and using same
ActiveUS8507040B2Pretreated surfacesChemical vapor deposition coatingPhase-change memoryPhysical chemistry
This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Owner:VERSUM MATERIALS US LLC
Gete/sb type superlattice phase change thin film material for high-speed phase change memory and preparation method thereof
InactiveCN104795494BLow thermal conductivityImprove thermal stabilityElectrical apparatusVacuum evaporation coatingComposite filmPhase-change memory
Owner:JIANGSU UNIV OF TECH
Semiconductor device and process for producing the same
InactiveUS20090050871A1Prevent peelingReduce crystallizationSolid-state devicesSemiconductor/solid-state device manufacturingDielectricPhase-change memory
A semiconductor device having a phase-change memory cell comprises an interlayer dielectric film formed of, for example, SiOF formed on a select transistor formed on a main surface of a semiconductor substrate, a chalcogenide material layer formed of, for example, GeSbTe extending on the interlayer dielectric film, and a top electrode formed on the chalcogenide material layer. A fluorine concentration in an interface between the interlayer dielectric film and the chalcogenide material layer is higher than a fluorine concentration in an interface between the chalcogenide material layer and the top electrode.
Owner:RENESAS ELECTRONICS CORP
Method for preparing nano bowl-shaped phase change memory unit
ActiveCN104576925AImprove heating efficiencyReduce contact areaElectrical apparatusNanoinformaticsHigh current densityPhase-change memory
The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.
Owner:JILIN NORMAL UNIV
Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof
InactiveUS20150207070A1Ratio of surface to volume can be increasedIncrease speedVacuum evaporation coatingSputtering coatingElectricityPhase-change memory
The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being Ax(Sb2Te)1−x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0<x<0.5 The phase-change material provided in the present invention is similar to a usual GeSbTe material, so as to be propitious to implement high-density storage. The material may perform reversible phase-change under an effect of an externally electrically driven nano-second (ns) pulse. A phase-change speed of the W—Sb—Te is 3 times of the GeSbTe material, so as to be propitious to implement the high-speed PCRAM.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Technology for improving GeSbTe phase change property and thin film preparation method thereof
InactiveCN104485417AMake up for deficienciesEasy to distinguishElectrical apparatusThin membraneHeat stability
The invention provides a technology for improving the GeSbTe phase change property and a thin film preparation method. A compound is formed by adding TiN into a Ge-Sb-Te phase change material, and the chemical formula of the compound is (TiN)1-x-( Ge-Sb-Te)X (wherein X is greater than 0.1 and smaller than 1), so that the thermal property and the electrical property of the Ge-Sb-Te phase change material can be improved. The crystallizing temperature (-160 DEG C), the thermal stability and the data retention capacity of the Ge-Sb-Te phase change material are not ideal, so that the application of Ge-Sb-Te in a phase change storage material is always restricted. A TiN material is extremely high in thermal stability; due to combination of two alloy materials, a novel material (TiN)1-x-( Ge-Sb-Te)X is obtained, and the novel (TiN)1-x-( Ge-Sb-Te)X is higher in electrical property and higher in thermal stability and data retention capacity compared with the Ge-Sb-Te phase change material.
Owner:QUFU NORMAL UNIV
Nano-particle composite phase change material and preparation method thereof
InactiveCN102241168AImprove controllabilityFast crystallizationLayered productsHeat-exchange elementsNanoparticleProtection layer
The invention discloses a nano-particle composite phase change material and a preparation method thereof. The material sequentially comprises a substrate layer, a second phase layer, a phase change layer and a protection layer from bottom to top, wherein the substrate layer is a Si sheet or K9 glass sheet with thickness of 3.0 mm; the second phase layer is a Si or Ge or SbTe or Sb film with thickness of 10-100 nm; the phase change layer is a GeSbTe or AgInSbTe phase change material film with thickness of 10-100 nm; the protection layer is a SiN or ZnS-SiO2 film with thickness of 10-20 nm; and the second phase layer and the phase change layer are formed into a composite phase change layer under the effect of laser irradiation. The material disclosed by the invention has relatively high crystallization speed.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Phase change memory materials, devices and methods
A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.
Owner:UNIV OF SOUTHAMPTON
Silicon-doped bismuth telluride-based memory material for phase-change memory and preparation method of silicon-doped bismuth telluride-based memory material
ActiveCN102403459ACrystalline resistance is smallFast crystallization rateElectrical apparatusPhase-change memoryBismuth telluride
The invention provides a silicon-doped bismuth telluride-based memory material for a phase-change memory and a preparation method of the silicon-doped bismuth telluride-based memory material. A chemical formula of the silicon-doped bismuth telluride-based material is BixTeySi100 minus (x plus y), wherein the x and the y satisfy the following conditions that the x is more than 0 and is less than or equal to 40, the y is more than 0 and is less than or equal to 60, and the x plus the y is more than or equal to 90 and is less than 100. Under the situation that an electrical impulse signal is applied, the silicon-doped bismuth telluride-based material has the reversible characteristic between a high-impedance state and a low-impedance state and can be used for the phase-change memory. Compared with the traditional GeTe, SiSbTe, GeSbTe and other phase-change thin-film materials for the phase-change memory, the silicon-doped bismuth telluride-based material has simple component, quicker phase-change speed, lower energy required for phase change and good compatibility with a complementary metal oxide semiconductor (CMOS) device manufacturing process, and is an excellent new memory material for the phase-change memory.
Owner:HUAZHONG UNIV OF SCI & TECH
Chemico-mechanical polishing solution for phase-change material GeSbTe
InactiveCN108129991AAchieve mechanical removalEfficient removalPolishing compositions with abrasivesWater basedPhase-change material
The invention relates to a chemico-mechanical polishing solution for a phase-change material GeSbTe. The chemico-mechanical polishing solution for the phase-change material GeSbTe is prepared from anammonia type nanosilicon dioxide grinding material, an oxidizing agent, a water-soluble polymer surface protecting agent, an amino acid organic additive and a water-based medium. The chemico-mechanical polishing solution provided by the invention is applicable to a chemico-mechanical polishing process of the phase-change material GeSbTe, is high in polishing rate reaching to 200nm / min and high inGeSBTe / SiO2 polishing selection ratio reaching to 4000:1, and has no polishing etch defect.
Owner:浙江晶圣美纳米科技有限公司
GeSbTe phase change material thin film device with high bonding capacity and low resistance
PendingCN111416038AStrong compactnessImprove bindingElectrical apparatusInternal resistanceProtection layer
The invention discloses a GeSbTe phase change material thin film device with high bonding capacity and low resistance. The device comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer; the lower electrode layer, the first GeSbTe material layer, the molybdenumdisulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially stacked on the substrate layer; the lower electrode layer isof a double-layer composite structure; the lower electrode layer comprises a Cr-Ag alloy plating layer plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy plating layer, wherein M in the Cr-M alloy material layer is selected from Mn, Ta, TaN, Ti, W, Ni, Al, Co or Cu. The improved thin film device based on the GeSbTe phase change material has thecharacteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.
Owner:GUANGDONG UNIV OF PETROCHEMICAL TECH
A kind of preparation method of nanobowl-shaped phase-change memory unit
ActiveCN104576925BImprove heating efficiencyReduce contact areaElectrical apparatusNanoinformaticsHigh current densityPhase-change memory
The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.
Owner:JILIN NORMAL UNIV
A kind of preparation method of gesbte series alloy powder
The invention provides a method for preparing GeSbTe alloy powder. Sb, Te and an appropriate amount of the first dopant are mixed, and the vacuum melting treatment is carried out at 640-690°C, which reduces the sealing melting temperature and prevents the tellurium component Composition deviation caused by volatilization is safer for dealing with high vapor pressure element tellurium, low-cost glass tubes can be used, single-tube synthesis capacity is increased, and the difficulty of vacuum sealing is reduced. Then, the SbTe alloy after vacuum smelting treatment, Ge and an appropriate amount of the second dopant are mixed, and the powder synthesis is carried out under the condition of protective gas. The powder synthesis process has a large processing capacity, and the component distribution is uniform without segregation. The protective atmosphere of hydrogen reduces the oxidized material and reduces the oxygen content of the alloy powder. The composition of the GeSbTe alloy powder obtained by the preparation method disclosed by the invention is uniform, the content of non-proportioned impurities is low, and the content of oxygen is low.
Owner:XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application
ActiveUS11362276B2Increase speedImprove data retentionSemiconductor/solid-state device detailsSolid-state devicesHeat stabilitySilicon oxide
A phase-change material having specific SiOx doping into special Ge-rich GexSbyTez material is described. Integrated circuits using this phase-change material as memory elements in a memory array can pass the solder bonding criteria mentioned above, while exhibiting good set speeds and demonstrating good 10 year data retention characteristics. A memory cell described herein comprises a first electrode and a second electrode; and a memory element in electrical series between the first and second electrode. The memory element comprises a GexSbyTez phase change material with a silicon oxide additive, including a combination of elements having Ge in a range of 28 to 36 at %, Sb in a range of 10 to 20 at %, Te in a range of 25 to 40 at %, Si in a range of 5 to 10 at %, and O in a range of 12 to 23 at %.
Owner:MACRONIX INT CO LTD
A kind of preparation method of high-performance gesbte-based thermoelectric material
ActiveCN107293637BReduce carrier concentrationImprove thermoelectric performanceThermoelectric device manufacture/treatmentThermoelectric device junction materialsIngotMelt spinning
The invention discloses a preparation method of a high-performance GeSbTe-based thermoelectric material, which comprises the following steps: 1) taking Ge, Sb and Te simple substances as raw materials, weighing each raw material according to the stoichiometric ratio, performing melting treatment, and cooling to room temperature with the furnace Obtain an ingot product; 2) Inductively melt and spin the obtained ingot product to obtain a thin strip product; 3) Grind the thin strip product obtained in step 2), and then perform spark plasma sintering to obtain the GeSbTe based thermoelectric materials. The present invention effectively reduces the carrier concentration of GeTe-based thermoelectric materials by Sb-doping GeTe, and combines the melting and sintering method with the melting spin-spin technology, on the basis of ensuring the GeSbTe-based system structure and composition information, further The microstructure is controlled by the melt spinning process, so as to prepare GeSbTe-based thermoelectric materials with fine structure, stable composition and excellent thermoelectric performance.
Owner:WUHAN UNIV OF TECH
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