33 results about "GeSbTe" patented technology

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

The present invention discloses a method for manufacturing GeSbTe film with good crystalline and good surface appearance on non-crystal material layer, a method for manufacturing phase change random access memory using the GeSbTe film manufacturing method, and phase change random access memory. The GeSbTe film manufacturing method includes the following operations: to obtain seed crystal layer formed from Ge, Sb, Te, Sb2Te3 or Ge doped Sb, by supplying one or two kinds selected from set composed of Ge precursor, Sb precursor and Te precursor to the non-crystal material layer upper surface; and GeSbTe film is formed by supplying Ge precursor, Sb precursor and Te precursor to the seed crystal layer upper surface.

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

Photonic integrated circuits required connection to germanium doped silica cored optical fibers or silica cored and fluorine doped silica cladding optical fibers which have low index contrast and large mode field diameters. However, the optical waveguide within a photonic integrated circuit such as formed using silicon-on-insulator or compound semiconductors tends to be high index contrast and small mode field diameter. Accordingly, it is necessary to implement adiabatic waveguide tapers with a high coupling efficiency and small footprint in order to couple into the photonic integrated circuits to / from the optical fiber. Prior art tapers have been generally high loss and absorb valuable die footprint. In contrast the inventors demonstrate a small low loss waveguide taper designed using a methodology they refer to a “constant loss”.

The invention discloses a Ge / Sb superlattice phase change thin film material for high-speed and low power consumption phase change memory, which is characterized in that: the Ge / Sb superlattice phase change thin film material is a multi-layer film structure, composed of The Ge layer and the Sb layer are alternately deposited and composited, and one layer of Ge layer and one layer of Sb layer are used as an alternating cycle, and the Ge layer of the latter alternate cycle is deposited on the Sb layer of the previous alternate cycle. The Ge / Sb-like superlattice phase-change thin film material of the present invention utilizes the clamping effect of the multilayer interface in the superlattice-like structure to reduce the grain size, thereby shortening the crystallization time, inhibiting crystallization, and improving the thermal stability of the material while speeding up the phase transition. The RESET voltage of the Ge / Sb class superlattice phase change film material of the present invention is lower than the RESET voltage of the Ge2Sb2Te5 film under the same voltage pulse more than 30%, illustrating that the GeSb class superlattice phase change film material of the present invention has lower power consumption.

This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

The invention discloses a GeTe / Sb superlattice phase change thin film material used for high-speed phase change memory. A layer of Sb is used as an alternating period, and the GeTe layer of the latter alternating period is deposited on the Sb layer of the previous alternating period. Tests have proved that the time for the sudden change in the reflectivity of the GeTe / Sb class superlattice phase-change thin film material of the present invention is about 5.3ns, and the time for the sudden change in the reflectivity of the single-layer Ge2Sb2Te5 traditional phase-change thin film material is about 39ns; Compared with the traditional single-layer Ge2Sb2Te5 phase-change thin-film material, the phase-change thin-film material of the present invention has a faster phase-change speed, thereby making the phase-change memory prepared with it have a faster operating speed, which is conducive to improving the read and write performance of PCRAM information. speed.

The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.

The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.

A phase-change material having specific SiOx doping into special Ge-rich GexSbyTez material is described. Integrated circuits using this phase-change material as memory elements in a memory array can pass the solder bonding criteria mentioned above, while exhibiting good set speeds and demonstrating good 10 year data retention characteristics. A memory cell described herein comprises a first electrode and a second electrode; and a memory element in electrical series between the first and second electrode. The memory element comprises a GexSbyTez phase change material with a silicon oxide additive, including a combination of elements having Ge in a range of 28 to 36 at %, Sb in a range of 10 to 20 at %, Te in a range of 25 to 40 at %, Si in a range of 5 to 10 at %, and O in a range of 12 to 23 at %.

The invention discloses a preparation method of a high-performance GeSbTe-based thermoelectric material, which comprises the following steps: 1) taking Ge, Sb and Te simple substances as raw materials, weighing each raw material according to the stoichiometric ratio, performing melting treatment, and cooling to room temperature with the furnace Obtain an ingot product; 2) Inductively melt and spin the obtained ingot product to obtain a thin strip product; 3) Grind the thin strip product obtained in step 2), and then perform spark plasma sintering to obtain the GeSbTe based thermoelectric materials. The present invention effectively reduces the carrier concentration of GeTe-based thermoelectric materials by Sb-doping GeTe, and combines the melting and sintering method with the melting spin-spin technology, on the basis of ensuring the GeSbTe-based system structure and composition information, further The microstructure is controlled by the melt spinning process, so as to prepare GeSbTe-based thermoelectric materials with fine structure, stable composition and excellent thermoelectric performance.