32results about How to "Achieve High Density Storage" patented technology

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

The invention discloses a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof. The gate electrode adopts a heavily doped low-resistance single crystal silicon substrate with a thickness of 100-300nm; the gate insulation formed on the surface of the gate electrode silicon substrate dielectric layer; a polysilicon floating gate embedded between the gate insulating dielectric layer and the tunneling insulating dielectric layer as a charge storage unit; a tunneling insulating dielectric layer formed on the surface of the floating gate; growing an organic semiconductor on the surface of the tunneling insulating dielectric layer material to form the active layer of the device; on the surface of the active layer, metal is vacuum-evaporated through a metal mask to form the source and drain of the device. The beneficial effect of the invention is to reduce the working voltage of the floating gate memory based on the organic field effect transistor, realize high-density storage of the device, improve the retention characteristic of the device, and reduce the manufacturing cost of the device.

The invention relates to a multi-valued storage unit based on the co-control of conductive filaments and polarization. The multi-valued storage unit based on the co-control of conductive filaments and polarization consists of a bottom electrode, a ferroelectric functional layer, a semiconductor Functional layer and top electrode; the multi-value storage unit realizes the characteristics of multi-value storage through the migration of the top electrode metal atoms in the semiconductor functional layer, and the polarization reversal and oxygen vacancy concentration change of the ferroelectric functional layer, which can realize non- Destructive reading and high storage density, in addition to simple operation, low operating voltage, and compatible with Si process, can realize low voltage writing and reading, overcome the ferroelectric tunnel junction in the past using probes to write and read multiple values Storage, the use of expensive substrates, expensive electrode materials, and the limitations of incompatibility with Si technology, and the realization of multi-value storage, is conducive to the realization of industrialization.

The invention belongs to the technical field of semiconductor memories and in particular relates to a semiconductor memory with a vertical structure and a manufacturing method thereof. The memory provided by the invention is a vertical channel double-metal floating gate memory and comprises at least one substrate region, a drain region, a source region, two floating gate regions and a control grid, wherein the floating gate regions of the memory are used for storing electric charges. The invention also discloses a manufacturing method of the double-metal floating gate memory. The memory adopts a vertical channel structure and doest not occupy more chip area while increasing grid length so as to contribute to high-integration development of the chip; and a double-bit storage unit with small area is manufactured by the simplified method, so that more storage units can be manufactured on the silicon substrate with the same area and high-density storage can be realized.

The invention discloses a semi-floating gate memory, which comprises at least one U-shaped groove formed in a semiconductor substrate, one buried source region formed in the semiconductor substrate at the bottom of the U-shaped groove, and two buried source regions formed in the semiconductor substrate at the bottom of the U-shaped groove. Drain regions respectively formed in the semiconductor substrate on both sides of the U-shaped groove, a control gate and two floating gates for storing charges formed in the U-shaped groove, the control gate and any one of the floating gates formed in the U-shaped groove The combination of the drain region selects one floating gate, and two gate-controlled pn junction diodes respectively formed in the semiconductor substrate on both sides of the U-shaped groove and connected to the drain region and the floating gate. A half-floating gate memory array, in which the angle between the bit line and the corresponding active area is less than 80 degrees, more half-floating gate memories can be manufactured in the same semiconductor substrate size, and high-density storage can be realized. The invention adopts a self-alignment process to manufacture the half-floating gate memory and the half-floating gate memory array, and the process is simple and easy to control.

The invention provides a multistage storage read-write method and system for a phase change memory, and the system comprises a data storage module which comprises a plurality of data units for storingdata; a reference module which comprises a plurality of reference units, wherein 2k-1 reference unit corresponds to one data unit and are used for storing a reference signal corresponding to the stored data, and k is a stored data bit; and a reading function module which reads the reference signal corresponding to a certain data unit when reading the data unit, and restores the data stored in thedata unit. According to the invention, a 2T2R structure is used as a basic unit for data storage, the influence caused by resistance drift is reduced to a certain extent through the combination of different resistances of the two phase change storage elements, and high-density storage is realized; an error detection and correction function is set, and the reliability of multi-value storage of thephase change memory is improved through error detection and correction; a reference unit is arranged, the stored data is calculated and restored through the reference unit, and high-reliability reading is achieved; meanwhile, the difficulty of error detection and correction is reduced, and the reliability is further improved.

The invention discloses a ferro-resistance variable memory, a writing method, a reading method and a preparation method thereof. The ferroelectric RRAM includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and at least one semiconductor layer adjacent to the ferroelectric layer; the iron The electric layer is polarized under the application of an electric field for changing the potential barrier of the switch layer. In the present invention, at least one semiconductor layer is added to the switch layer, and the semiconductor layer is adjacent to the ferroelectric layer, which is equivalent to adding a variable barrier layer, which increases the resistance ratio of the high and low resistance states of the switch layer under the action of an electric field , that is, the storage window of the ferro-resistive variable memory is increased, and the high-density storage of the ferro-resistive variable memory is realized, and the problem of a small storage window of the ferro-resistive variable memory is solved.

The invention discloses a modularized high-speed optical disc juke-box for an equipment cabinet. The modularized high-speed optical disc juke-box comprises an equipment cabinet, a server module, a mechanical hand component and a pushing-pulling framework, wherein a disc bin array is arranged along one side wall of the equipment cabinet; the disc bin array comprises a plurality of stacked disc bins, and optical disc sheet boxes are arranged in the stacked disc bins; the server module is arranged above the disc bin array in the equipment cabinet, and comprises a server and an optical disc driver set connected with the server through a data line; the mechanical hand component which is arranged towards the side opening of the disc bin array is arranged in the equipment cabinet; the mechanical hand component is used for getting out a target optical disc in the selected disc bin; the pushing-pulling framework is corresponding to the disc bin array and used for pushing and pulling one or more disc bins in the disc bin array. The modularized high-speed optical disc juke-box for the equipment cabinet disclosed by the invention adopts a modularized design and mutually independent components, and is convenient to maintain; the disc bin array, the server module and the opposite mechanical hand component are stacked, so that the optical disc storage density and the integral space utilization rate of the optical disc juke-box can be increased.

The invention discloses a VO based x The phase-change memory cell of the gating tube, including the lower electrode layer, VO x Gate layer, phase change function layer and upper electrode layer. The present invention adopts VO x To realize the gating of the phase change functional layer, data storage can be realized on the basis of the gating of the phase change functional layer. by giving to VO x Applying a voltage to control its state switching can achieve the purpose of the phase-change memory cell being in a non-gated state when the voltage is low and being in a gated state when the voltage is high. The present invention through VO x The switch control of the phase change memory can effectively reduce the leakage current of the phase change memory array and provide a sufficiently high Reset current; the invention does not require high temperature process conditions, simplifies the preparation process of the phase change memory, saves costs, and is a highly integrated phase change memory. The commercialization of memory provides the possibility.

The invention provides an 8-bit semi-conductor storage unit, a manufacture method and a storage unit array of the 8-bit semi-conductor storage unit. The 8-bit semi-conductor storage unit comprises a source area, four drain areas, four grid areas, four strip-shaped semi-conductor fins and eight charge storage composite layers, wherein four drains are symmetrically arranged outside a source electrode, one strip-shaped semi-conductor fin with a channel region is arranged between each drain electrode and the source electrode, each drain electrode is arranged between each two adjacent strip-shaped semi-conductor fins, and each grid are in contact with the channel region between the semi-conductor fins at two sides of the corresponding grid through the charge storage composite layers with charge capture layers. By means of the novel structure, 8-bit storage of the storage unit is ingeniously achieved, and storage density of the storage unit is further improved.

The invention provides a gating tube material, a gating tube unit and a storage device structure, the gating tube material is a compound including at least Ge and S, and the general chemical formula of the gating tube material is (Ge x S 1‑x ) 1‑y m y , wherein M includes doping materials, and 0.1≤x≤0.9, 0≤y≤0.5. The gating tube material of the present invention selects Ge x S 1‑x material, when the material is used for the gating tube unit, it has the advantages of large opening current, small leakage current, good thermal stability, simple material and non-toxicity; the gating tube material of the present invention passes through Ge x S 1‑x The material is mixed with doping material, which can adjust and optimize the threshold voltage, turn-on current and fatigue characteristics of the gating tube unit made of the gating material; it can improve the thermal stability of the gating tube unit made of the gating material 1. Reduce the leakage current of the gate tube unit made of the gate material, and enhance the repeatability of the gate tube unit made of the gate material.

The invention discloses a high-density phase-change memory, comprising from bottom to top: a Schottky diode, a phase-change layer and an upper electrode, the Schottky diode comprising a semiconductor layer and a metal layer forming a Schottky potential barrier with the semiconductor layer , the metal layer serves as the lower electrode of the phase change layer at the same time; the semiconductor layer, the metal layer, the phase change layer and the upper electrode are a flat layer structure stacked from bottom to top, or, the semiconductor layer, the phase change layer and the upper electrode are self- Bottom-up planar structure, the metal layer is connected with a planar bottom surface and vertical sidewalls, the metal layer is stacked with the semiconductor layer below it through its bottom surface, and is connected to the phase change layer above it through its sidewalls , the phase change layer is stacked with the upper electrode. The invention can effectively improve the density of the phase change memory unit, reduce the number of photolithography, simplify the process and reduce the manufacturing cost. The invention also discloses a preparation method of the above-mentioned high-density phase change memory.

The invention belongs to the technical field of material synthesis, and particularly discloses a ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction, a preparation method thereof and applications. The homogeneous PN junction comprises a ZnO buffer layer deposited on an n-Si (111) substrate base body, a p-type ZnCuNO ferromagnetic layer deposited on the ZnO buffer layer, an n-type ZnCoLiO ferroelectric layer deposited on the ZnCuNO ferromagnetic layer, a top electrode layer and a bottom electrode layer. The magnetoelectric coupling homogeneous PN junction has good lattice matching performance with Si, and has good ferroelectricity, a ferromagnetic property and a magnetoelectric coupling characteristic. The magnetoelectric coupling homogeneous PN junction has two degrees of freedom of electric charge and spinning, and control can be carried out on the two degrees of freedom through an external electric field and a magnetic field respectively, thereby being used for designing and developing a ternary or quaternary memory device, realizing high-density storage of information, and having great application prospects in the field of high-density memories.