8-bit semi-conductor storage unit, manufacture method and storage unit array of 8-bit semi-conductor storage unit

Abstract

The invention provides an 8-bit semi-conductor storage unit, a manufacture method and a storage unit array of the 8-bit semi-conductor storage unit. The 8-bit semi-conductor storage unit comprises a source area, four drain areas, four grid areas, four strip-shaped semi-conductor fins and eight charge storage composite layers, wherein four drains are symmetrically arranged outside a source electrode, one strip-shaped semi-conductor fin with a channel region is arranged between each drain electrode and the source electrode, each drain electrode is arranged between each two adjacent strip-shaped semi-conductor fins, and each grid are in contact with the channel region between the semi-conductor fins at two sides of the corresponding grid through the charge storage composite layers with charge capture layers. By means of the novel structure, 8-bit storage of the storage unit is ingeniously achieved, and storage density of the storage unit is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to an 8-bit semiconductor memory unit, a manufacturing method and a memory unit array thereof. Background technique [0002] As a type of semiconductor memory, a polysilicon floating gate memory cell structure (Floating Gate) has been widely used. Generally, a 1-bit polysilicon floating gate memory cell structure 1 includes a semiconductor substrate 2, an active region including a source 3 and a drain 4 is formed on the semiconductor substrate, and a blocking oxide layer 5, a floating The gate 6, the tunnel oxide layer 7 and the control gate 8, the blocking oxide layer 5, the floating gate 6, and the tunnel oxide layer 7 form a charge storage composite layer 9, such as figure 1 shown. When programming, a higher programming voltage is applied to the drain 4 and the control gate 8, and the source 3 is grounded. In this way, a large number of electrons flow from the source 3 to t...

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Problems solved by technology

[0005] Although floating gate and SONOS memory cells have excellent storage performance, the storage capacity of conventional 1-bit memory cells can no longer meet people's requirements for memory miniaturization and large storage capacity. In order to better adapt to practical applications , around the improvement of semiconductor memory storage performance, especially the improvement of its storage density has been the focus of researchers

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