a vo-based x phase change memory cell

Abstract

The invention discloses a VO based x The phase-change memory cell of the gating tube, including the lower electrode layer, VO x Gate layer, phase change function layer and upper electrode layer. The present invention adopts VO x To realize the gating of the phase change functional layer, data storage can be realized on the basis of the gating of the phase change functional layer. by giving to VO x Applying a voltage to control its state switching can achieve the purpose of the phase-change memory cell being in a non-gated state when the voltage is low and being in a gated state when the voltage is high. The present invention through VO x The switch control of the phase change memory can effectively reduce the leakage current of the phase change memory array and provide a sufficiently high Reset current; the invention does not require high temperature process conditions, simplifies the preparation process of the phase change memory, saves costs, and is a highly integrated phase change memory. The commercialization of memory provides the possibility.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage, and more particularly, relates to a VO-based x Phase-change memory cells for strobes. Background technique [0002] Phase change memory PCM is now one of the most promising non-volatile memories to replace Flash memory as the next generation. The phase-change memory cell uses chalcogenide as the phase-change material and can achieve reversible transition between crystalline and amorphous states under voltage pulses. Applying an electrical pulse with a medium amplitude, a long pulse width and a slow falling edge of the pulse can make the phase change material change from an amorphous state to a crystalline state, which is used to write data from "0" to "1"; Higher amplitude, narrower pulse width, and steeper falling edge of the electrical pulse will cause the phase change material to change from a crystalline state to an amorphous state, which is used to erase data. The current hi...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a VO-based x The phase-change memory cell of the gating tube, by controlling the VO x The switch is used to realize the gating of the phase change memory unit, adopting the 1D1T structure, which can realize 3D stacking, thereby solving the technical problems of low storage density of the traditional 1T1R structure phase change memory and the high temperature required for the traditional 1D1R manufacturing process of diodes

Images