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Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material

A technology of phase-change memory and phase-change materials, which is applied in the field of antimony-rich high-speed phase-change materials and their preparation, can solve the problems of low crystallization temperature and cannot fully meet the needs of applications, and achieve mature preparation technology, stable resistance, and small volume effect of change

Active Publication Date: 2012-11-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Sb 2 The only disadvantage of Te is its low crystallization temperature, about 145°C
So Sb 2 Te does not fully meet the needs of the application, especially for some applications in high temperature environments

Method used

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  • Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material
  • Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material
  • Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material

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Experimental program
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Embodiment 1

[0039] 1. Using magnetron sputtering W and Sb 2 Preparation of W on thermally oxidized silicon substrates by Te double-target co-sputtering x (Sb 2 Te) 1-x Thin films, when co-sputtering, the background vacuum is 2.0×10 -4 Pa, the argon gas pressure during sputtering is 0.22Pa. Sb 2 The sputtering power of the Te target is locked at radio frequency (RF) 20W, and the sputtering power of the W target is changed to radio frequency (RF) 0W, 5W, 7W, 10W respectively, and four kinds of phase change films a#, b#, c#, d#. The parameters of the four thin film phase change materials are shown in Table 1 below:

[0040] Table 1

[0041]

[0042] 2. W x (Sb 2 Te) 1-x Thin film materials were tested for in-situ resistance, and the results were as follows: figure 1 shown. It can be seen that the Sb without W doping 2 Te crystallization temperature is 145°C. After the addition of W element, the crystallization temperature of the phase change film is greatly improved, and the...

Embodiment 2

[0048] 1. Preparation of Ti on thermally oxidized silicon substrates by magnetron sputtering 0.1 (Sb 2 Te) 0.9 film. The specific experimental method is: use the prepared Ti 0.1 (Sb 2 Te) 0.9 Single target sputtering, the power is RF 30W, the background vacuum is 1.8×10 -4 Pa, the argon gas pressure during sputtering is 0.19Pa, and the film thickness is 200nm.

[0049] 2. Testing Ti with in-situ resistance-temperature 0.1 (Sb 2 Te) 0.9 The crystallization temperature of the film is 225°C, and the data retention is calculated to be 137°C, both values ​​are much higher than Ge 2 Sb 2 Te 5 film.

[0050] 3. Ti 0.1 (Sb 2 Te) 0.9 The volume change before and after the phase transition of the thin film is very small, the grain distribution is very uniform, and there is no phase separation, which is very suitable for high-speed and high-density memory.

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Abstract

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

Description

technical field [0001] The invention relates to metal element-doped phase-change materials in the technical field of microelectronics, in particular to an antimony-rich high-speed phase-change material used in phase-change memory, its preparation method and application. Background technique [0002] Phase-change memory technology is an emerging large-capacity memory technology. With high speed, high density, low voltage, low power consumption and good fatigue characteristics, it has become the main force that can replace the existing non-volatile memory technology. In recent years, research on phase-change memory (PCRAM) has become a hot topic in the scientific community. The working principle of PCRAM is very simple. It uses the huge resistance difference between the amorphous state and the crystalline state of the phase change material to realize the storage of "0" and "1". Although this performance of phase change materials was discovered as early as the 1960s, due to te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH01L45/06H01L45/148H01L45/1625H01L45/1233C23C14/0623C23C14/352H10N70/884H10N70/231H10N70/023H10N70/026H10N70/8828H10N70/826C23C14/3464C23C14/35
Inventor 宋志棠吴良才彭程饶峰朱敏
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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