483results about How to "Raise the crystallization temperature" patented technology

A new process of interpolymerizing ethylene interpolymer products having improved properties, such as increased onset of crystallization temperature, is disclosed. Preferably, the process comprises interpolymerizing a first homogeneous ethylene / alpha-olefin interpolymer and at least one second homogeneous ethylene / alpha-olefin interpolymer using at least two constrained geometry catalysts having different reactivities such that the first ethylene / alpha-olefin interpolymer has a narrow molecular weight distribution (NMWD) with a very high comonomer content and relatively high molecular weight and the second ethylene / alpha-olefin interpolymer has a NMWD with a low comonomer content and a molecular weight lower than that of the first interpolymer. The resultant first homogeneous interpolymer is combined with the resultant second homogeneous interpolymer in appropriate weight ratios resulting in the desired finished polymer structure. The first interpolymer and the second interpolymer can be polymerized in a single reactor or they can be polymerized in separate reactors operated in parallel or series.

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

Milled, small particle size, solid bicyclo[2.2.1]heptane dicarboxylate salt-containing thermoplastic nucleating additive formulations further comprising at least one anticaking agent for improved haze reduction, improved nucleation performance, and prevention of potential cementation (via agglomeration) of the salt component present therein are provided. Such small particle size dicarboxylate salts provide desirable properties within thermoplastic articles, particularly as nucleating agents, but apparently suffer from certain clarity issues and agglomeration problems (due to the flat and thin plate structures of such compounds and the propensity they exhibit to cohere to each other during storage), making utilization thereof less desirable for certain applications. Thus, an improvement has been provided to permit full benefit of the excellent crystallization temperatures, stiffness, and calcium stearate compatibility such dicarboxylate salts accord within target low haze thermoplastics. Furthermore, unexpected improvements in dusting reduction have been found upon the utilization of such anticaking additives in combination with the aforementioned nucleating salts. Thermoplastic additive compositions and methods of producing thermoplastics with such nucleator / anticaking additive combinations are also contemplated within this invention.

The invention relates to a Sb-Te-Ti phase-change thin-film material capable of being used for a phase-change memory, and preparation and application of the Sb-Te-Ti phase-change thin-film material. The novel Sb-Te-Ti phase-change storage material is prepared by doping Ti into a Sb-Te phase-change material, the doped Ti forms bonds with both Sb and Te, and the chemical general formula of the Sb-Te-Ti phase-change storage material is SbxTeyTi100-x-y, wherein x is more than 0 and less than 80, and y is more than 0 and less than 100-x. When the phase-change storage material is a Ti-Sb2Te phase-change storage material, a Ti atom replaces a Sb atom without phase separation. The grain growth is dominant in the crystallization process of the conventional Sb-Te phase-change material, so that the phase change rate is high, but the retention cannot meet industrial requirements. The crystallization temperature of the novel Sb-Te-Ti phase-change storage material is greatly raised, the retention is promoted, and the thermal stability is enhanced; simultaneously, the non-crystalline state resistance is reduced and the crystalline state resistance is increased; and the novel Sb-Te-Ti phase-change storage material can be widely applied to the phase-change memory.