2578 results about "Hydrazine compound" patented technology

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

A method of depositing a film of a metal chalcogenide. The first of these methods includes the steps of: contacting at least one metal chalcogenide, a hydrazine compound and optionally, an elemental chalcogen, to produce a solution of a hydrazinium-based precursor of the metal chalcogenide; applying the solution of the hydrazinium-based precursor of the metal chalcogenide onto a substrate to produce a film of the precursor; and thereafter annealing the film of the precursor to remove excess hydrazine and hydrazinium chalcogenide salts to produce a metal chalcogenide film on the substrate. The second of these methods includes the steps of: contacting: at least one metal chalcogenide and a salt of an amine compound to produce an ammonium-based precursor of the metal chalcogenide; contacting the ammonium-based precursor of the metal chalcogenide and a hydrazine compound, and optionally, an elemental chalcogen, to produce a solution of a hydrazinium-based precursor of the metal chalcogenide in the hydrazine compound; applying the solution of the hydrazinium-based precursor onto a substrate to produce a film; and thereafter, annealing to produce a metal chalcogenide film. Also provided is a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.

This invention is directed to making chemical derivatives of carbon nanotubes and to uses for the derivatized nanotubes, including making arrays as a basis for synthesis of carbon fibers. In one embodiment, this invention also provides a method for preparing single wall carbon nanotubes having substituents attached to the side wall of the nanotube by reacting single wall carbon nanotubes with fluorine gas and recovering fluorine derivatized carbon nanotubes, then reacting fluorine derivatized carbon nanotubes with a nucleophile. Some of the fluorine substituents are replaced by nucleophilic substitution. If desired, the remaining fluorine can be completely or partially eliminated to produce single wall carbon nanotubes having substituents attached to the side wall of the nanotube. The substituents will, of course, be dependent on the nucleophile, and preferred nucleophiles include alkyl lithium species such as methyl lithium. Alternatively, fluorine may be fully or partially removed from fluorine derivatized carbon nanotubes by reacting the fluorine derivatized carbon nanotubes with various amounts of hydrazine, substituted hydrazine or alkyl amine. The present invention also provides seed materials for growth of single wall carbon nanotubes comprising a plurality of single wall carbon nanotubes or short tubular molecules having a catalyst precursor moiety covalently bound or physisorbed on the outer surface of the sidewall to provide the optimum metal cluster size under conditions that result in migration of the metal moiety to the tube end.

The present invention provides nitrogenous compositions for forming a silicon nitride layer, wherein the nitrogenous composition comprises a hydrazine compound, an amine compound or a mixture thereof. The present invention further provides source compositions for forming a silicon nitride layer, wherein the source composition comprises a nitrogenous composition comprising a hydrazine compound, an amine compound or a mixture thereof, and a silicon source comprising hexachlorodisilane. Methods for forming silicon nitride layers are further provided. The silicon nitride layers provided herein may be formed on a substrate at a low temperature and may further exhibit improved breakdown voltage and an enhanced etch resistance.

The invention provides a Fenton and Fenton-like system fortifier and a using method thereof, which relate to a water treating fortifier and a using method thereof and overcomes the defects that the pH value of the Fenton and Fenton-like system reaction water body is limited, the adding amount of Fe<2+> is overhigh in the Fenton reaction, and the reaction speed is low in Fenton-like reaction. The fortifier is selected from ascorbic acid, sodium sulfite, lithium sulfite, potassium sulfite, magnesium sulfite, calcium sulfite, hydroxylamine, hydroxyl-ammonium perchlorate, hydroxylamine sulfate, hydrazine, N,N-diethylhydroxylamine, carbohydrazide, ethanolamine, a hydroxylamine solution or N,N,N',N'-tetra substituted phenylenediamines. The using method has the following steps of: adding the Fenton and Fenton-like system fortifier, fortificated chemicals and peroxide into the treated water body; and then, uniformly stirring to react. The fortifier can accelerate the reaction of water treatment and decrease the using amount of the fortificated chemicals.