The
stamping process and a method of fabrication of nano-stamps with characteristic dimensions below 1 nm and up to 100 nm intended for usage in making patterns of characteristic dimensions the same as those of the nano-stamp on surface of a substrate is provided. In the process a very hard stamp is fabricated by first depositing alternating
layers of two materials, one of which has very high
hardness, on some sacrificial substrate via PVD, CVD or any other deposition procedure that produces alternating
layers of selected thickness, from sub 1 nm to above 100 nm. The layered film is then polished to an atomically smooth finish perpendicular to the plane of the
layers and etched to produce dips in the softer layers. These steps produce a grid of parallel elevations and valleys on the etched surface, which now can be used as a stamp to stamp out patterns on a substrate of lower
hardness than the
hardness of the elevated layers. If the substrate is stamped twice with a turning of the stamp 90 degrees between first and second stampings, a square pattern of elevations or hills and valleys is formed, which can be used for
magnetic memory storage by subsequently
sputtering magnetic material on the tops of the elevations or hills.