99results about How to "Minimize diffusion" patented technology

A method and apparatus for measuring target animals, including livestock animals and full carcasses, and more specifically livestock animals such as cattle and hogs using a single camera system. More particularly, the method of the invention is directed toward obtaining key measurements of the target animal, such as animal weight, animal hip height and animal hip width.

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Laminated articles and layered articles, for example, low alkali glass laminated articles and layered articles useful for, for example, electrochromic devices are described.

An adsorbent material fabricated into a reinforcement-free, self-supported coherent thin sheet and configured for use as a parallel passage contactor element in adsorption / separation applications with gases and liquids is disclosed. The adsorbent sheet material is obtained by enmeshing fine adsorbent particulates in a polymer binder. Particulates include but are not limited to carbon particles, inorganic oxides particles, or ceramic particles, or synthetic polymer resin particles. The adsorbent sheet advantageously contains a large volume percentage of active adsorbent particles. The parallel passage contactor device fabricated from the adsorbent sheet material is characterized by minimal mass transfer resistance and better separation efficiency expressed as height equivalent to a theoretical plate, while it maintains most of the adsorptive properties of the starting particulates, and can be used in gas separation applications with short adsorption cycles, such as rapid pressure swing adsorption, rotary concentrators, rapid electric swing adsorption.

Embodiments of the invention provide methods for the transdermal delivery of therapeutic agents for the treatment of addictive cravings e.g., nicotine compounds for the treatment of nicotine cravings from tobacco use. An embodiment of a method for such delivery comprises positioning at least one electrode assembly in electrical communication with a patient's skin. The assembly includes a solution comprising a therapeutic agent which passively diffuses into the skin. A dose of agent is delivered from the assembly into the skin during a first period using a first current having a characteristic e.g., polarity and magnitude, to repel the agent out of the assembly. During a second period, a second current having a characteristic to attract the agent is used to retain the agent in the assembly such that delivery of agent into skin is minimized. A dose of agent may be delivered on demand by an input from the patient.

Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.

In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.

A cutting method and apparatus are provided to cut a portion of an optical fibre or waveguide with a laser beam. The proposed cutting action takes advantage of the sharp cutting edge of a laser beam generated so as to have a predetermined asymmetric intensity distribution. In operation, a prescribed amount of the beam distribution is impinged on the fibre or waveguide portion and causes the portion to ablate or vaporise so as to effect a cut at the portion in dependence upon the impingement. No translation of the laser beam across the fibre or waveguide is effected during cutting. The proposed cutting action bears definite advantages over conventional cutting techniques and finds utility for many optical fibre or waveguide applications. For example, the proposed cutting action can produce a substantially flat optical fibre or waveguide surface or a lens of enhanced quality at the end of the fibre or waveguide portion.

The invention provides a method of sustained delivery of a tertiary amine-containing parent drug comprising administering to a patient an effective amount of a prodrug compound of the invention wherein upon administration to the patient, release of the parent drug from the prodrug is sustained release. Prodrug compounds suitable for use in the methods of the invention are labile quaternary ammonium salts of tertiary amine-containing parent drugs (or tertiary imine-containing parent drugs) that are derivatized through aldehyde-linked prodrug moieties that reduce the solubility of the prodrug compound at a reference pH as compared to the parent drug. The physical, chemical and solubility properties of these derivatives can be further modulated by the choice of counterion X−. In one embodiment, the present invention provides a prodrug compound of Formula I:where R1-R5 are defined in the written description of the invention. The prodrug compounds of the invention can be used to treat any condition for which the tertiary amine-containing parent drug or tertiary imine-containing parent drug is useful as a treatment.

Compounds of Formula I and their use for the treatment of neurological and psychiatric disorders including schizophrenia and manic or mixed episodes associated with bipolar I disorder with or without psychotic features is disclosed:wherein R1-R8, G, N and A− are as defined in the written description.

This invention relates to novel photochromic and electrochromic monomers and polymers based on 1,2-dithienylcyclopentene derivatives and method of using and synthesizing same. The compounds are reversibly interconvertible between different isomeric forms under suitable photochromic or electrochromic conditions. The electrochromic conversion may be catalytic. The application also relates to ultra-high density homopolymers prepared using ring-opening methathesis polymerization (ROMP) where the central ring of the 1,2-bis(3-thienyl)-cyclopentene is incorporated directly into the polymer backbone. The monomer units may be readily functionalized to enable the synthesis of polymers with diverse structural and electronic properties. The compounds have many potential applications including high-density optical information storage systems, photoregulated molecular switches, reversible holographic systems, ophthalmic lenses, actinometry and molecular sensors, photochromic inks, paints and fibers and optoelectronic systems such as optical waveguides, Bragg reflectors and dielectric mirrors.

A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. An ultra-thin (UT) semiconductor-on-insulator channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A first BOX region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a second BOX region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.

A white organic light emitting device which has high color temperature characteristics and no change in color coordinates according to luminance change, includes a first electrode and a second electrode opposite to each other on a substrate, a charge generation layer formed between the first electrode and the second electrode, a second stack including a second light emitting layer formed between the charge generation layer and the second electrode, and a first stack including a first light emitting layer formed between the first electrode and the charge generation layer, wherein the first emitting layer has low singlet-triplet exchange energy to change triplet excitons into a singlet state by triplet-triplet annihilation and a dopant concentration of the first light emitting layer is adjusted according to a luminance change curve of the second stack.

A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits. The method and apparatus can provide ultra-high heating speed along with ultra-high heating temperatures for rapid thermal processing of semiconductors and other materials. It also allows the use of bonding materials with high melting temperature for strong bonding and sealing of mems and IC devices. The apparatus further provides for high interconnection density of integrated circuits as connections are made without the use of solder bumps.

A fuel system for an energy conversion device includes a deoxygenator system with an oxygen permeable membrane having a textured surface. A sweep gas and / or vacuum maintains an oxygen concentration differential across the membrane to deoxygenate the fuel. The textured surface increases the surface area of the oxygen permeable membrane. The textured surface of the oxygen permeable membrane is fabricated by pressing the textured surface into the oxygen permeable membrane with a microreplication-based tooling system. Another fabrication method presses the textured surface into a sacrificial film and the oxygen permeable membrane is then formed upon the sacrificial film to transfer the textured surface to the oxygen permeable membrane and the sacrificial film is then subsequently removed. Another fabrication method applies additional material to the oxygen permeable membrane through a porous sacrificial film.

A nonvolatile memory device includes a channel vertically extending from a substrate and comprising a first region that is doped with first impurities and a second region that is disposed under the first region, a plurality of memory cells and a selection transistor stacked over the substrate along the channel, and a diffusion barrier interposed between the first region and the second region, wherein a density of the first impurities is higher than a density of impurities of the second region.

A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. A UT SOI channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A BOX1 region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a BOX2 region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.

Reactive ion etch (RIE) selectivity during etching of a feature nearby embedded structure is improved by using a silicon oxynitride layer formed with carbonization throughout layer.

In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.

Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

A fuel system for an energy conversion device includes a deoxygenator system with an oxygen permeable membrane having a textured surface. A sweep gas and / or vacuum maintains an oxygen concentration differential across the membrane to deoxygenate the fuel. The textured surface increases the surface area of the oxygen permeable membrane. The textured surface of the oxygen permeable membrane is fabricated by pressing the textured surface into the oxygen permeable membrane with a microreplication-based tooling system. Another fabrication method presses the textured surface into a sacrificial film and the oxygen permeable membrane is then formed upon the sacrificial film to transfer the textured surface to the oxygen permeable membrane and the sacrificial film is then subsequently removed. Another fabrication method applies additional material to the oxygen permeable membrane through a porous sacrificial film.

An electron emission device includes cathode electrodes and gate electrodes formed on a first substrate and crossing each other while interposing an insulation layer. Opening portions are formed at the gate electrodes and the insulation layer while exposing the cathode electrodes. Electron emission sources are formed on the cathode electrodes exposed through the opening portions each with an area smaller than the area of the opening portion. An anode electrode is formed on a second substrate. Phosphor layers are formed on the anode electrode each with long sides proceeding in a first direction and short sides proceeding in a second direction. When the first substrate is viewed from the plan side, the electron emission source satisfies the following condition: a<b. In the condition, “a” indicates the distance between the electron emission source and the gate electrode in the first direction, and “b” indicates the distance between the electron emission source and the gate electrode in the second direction.

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

An electronic equipment housing (1000) comprises a housing body (300) comprising a conditioning unit (200) housing an air conditioner (210) and an equipment unit (100) adapted to house electrical equipment. A housing plenum (400) is mounted on top of the lower housing body (300), so as to cover and engage the equipment unit (100). The housing plenum (400) has at least one aperture (430) formed in the lower surface (450), wherein the aperture (430) is adapted to allow air to pass from the housing plenum (400) directly into the equipment unit (100) and wherein the housing plenum (400) is in fluid communication with the air conditioner (210). A duct arrangement (500) provides fluid communication between the equipment unit (100) and the air conditioner (210), wherein the duct arrangement (500) is adapted to return air from the equipment unit (100) to the air conditioner (210).