98results about How to "Minimize diffusion" patented technology

An adsorbent material fabricated into a reinforcement-free, self-supported coherent thin sheet and configured for use as a parallel passage contactor element in adsorption/separation applications with gases and liquids is disclosed. The adsorbent sheet material is obtained by enmeshing fine adsorbent particulates in a polymer binder. Particulates include but are not limited to carbon particles, inorganic oxides particles, or ceramic particles, or synthetic polymer resin particles. The adsorbent sheet advantageously contains a large volume percentage of active adsorbent particles. The parallel passage contactor device fabricated from the adsorbent sheet material is characterized by minimal mass transfer resistance and better separation efficiency expressed as height equivalent to a theoretical plate, while it maintains most of the adsorptive properties of the starting particulates, and can be used in gas separation applications with short adsorption cycles, such as rapid pressure swing adsorption, rotary concentrators, rapid electric swing adsorption.

Embodiments of the invention provide methods for the transdermal delivery of therapeutic agents for the treatment of addictive cravings e.g., nicotine compounds for the treatment of nicotine cravings from tobacco use. An embodiment of a method for such delivery comprises positioning at least one electrode assembly in electrical communication with a patient's skin. The assembly includes a solution comprising a therapeutic agent which passively diffuses into the skin. A dose of agent is delivered from the assembly into the skin during a first period using a first current having a characteristic e.g., polarity and magnitude, to repel the agent out of the assembly. During a second period, a second current having a characteristic to attract the agent is used to retain the agent in the assembly such that delivery of agent into skin is minimized. A dose of agent may be delivered on demand by an input from the patient.

In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.

The invention provides a method of sustained delivery of a tertiary amine-containing parent drug comprising administering to a patient an effective amount of a prodrug compound of the invention wherein upon administration to the patient, release of the parent drug from the prodrug is sustained release. Prodrug compounds suitable for use in the methods of the invention are labile quaternary ammonium salts of tertiary amine-containing parent drugs (or tertiary imine-containing parent drugs) that are derivatized through aldehyde-linked prodrug moieties that reduce the solubility of the prodrug compound at a reference pH as compared to the parent drug. The physical, chemical and solubility properties of these derivatives can be further modulated by the choice of counterion X⁻. In one embodiment, the present invention provides a prodrug compound of Formula I:

where R₁-R₅ are defined in the written description of the invention. The prodrug compounds of the invention can be used to treat any condition for which the tertiary amine-containing parent drug or tertiary imine-containing parent drug is useful as a treatment.

Compounds of Formula I and their use for the treatment of neurological and psychiatric disorders including schizophrenia and manic or mixed episodes associated with bipolar I disorder with or without psychotic features is disclosed:

wherein R₁-R₈, G, N and A⁻ are as defined in the written description.

A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. An ultra-thin (UT) semiconductor-on-insulator channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A first BOX region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a second BOX region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.

A white organic light emitting device which has high color temperature characteristics and no change in color coordinates according to luminance change, includes a first electrode and a second electrode opposite to each other on a substrate, a charge generation layer formed between the first electrode and the second electrode, a second stack including a second light emitting layer formed between the charge generation layer and the second electrode, and a first stack including a first light emitting layer formed between the first electrode and the charge generation layer, wherein the first emitting layer has low singlet-triplet exchange energy to change triplet excitons into a singlet state by triplet-triplet annihilation and a dopant concentration of the first light emitting layer is adjusted according to a luminance change curve of the second stack.

A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits. The method and apparatus can provide ultra-high heating speed along with ultra-high heating temperatures for rapid thermal processing of semiconductors and other materials. It also allows the use of bonding materials with high melting temperature for strong bonding and sealing of mems and IC devices. The apparatus further provides for high interconnection density of integrated circuits as connections are made without the use of solder bumps.

A fuel system for an energy conversion device includes a deoxygenator system with an oxygen permeable membrane having a textured surface. A sweep gas and/or vacuum maintains an oxygen concentration differential across the membrane to deoxygenate the fuel. The textured surface increases the surface area of the oxygen permeable membrane. The textured surface of the oxygen permeable membrane is fabricated by pressing the textured surface into the oxygen permeable membrane with a microreplication-based tooling system. Another fabrication method presses the textured surface into a sacrificial film and the oxygen permeable membrane is then formed upon the sacrificial film to transfer the textured surface to the oxygen permeable membrane and the sacrificial film is then subsequently removed. Another fabrication method applies additional material to the oxygen permeable membrane through a porous sacrificial film.

A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. A UT SOI channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A BOX1 region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a BOX2 region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.

Reactive ion etch (RIE) selectivity during etching of a feature nearby embedded structure is improved by using a silicon oxynitride layer formed with carbonization throughout layer.

Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

An electronic equipment housing (1000) comprises a housing body (300) comprising a conditioning unit (200) housing an air conditioner (210) and an equipment unit (100) adapted to house electrical equipment. A housing plenum (400) is mounted on top of the lower housing body (300), so as to cover and engage the equipment unit (100). The housing plenum (400) has at least one aperture (430) formed in the lower surface (450), wherein the aperture (430) is adapted to allow air to pass from the housing plenum (400) directly into the equipment unit (100) and wherein the housing plenum (400) is in fluid communication with the air conditioner (210). A duct arrangement (500) provides fluid communication between the equipment unit (100) and the air conditioner (210), wherein the duct arrangement (500) is adapted to return air from the equipment unit (100) to the air conditioner (210).