The invention discloses a production method of a low-
noise germanium-
silicon heterojunction bipolar
transistor, comprising the following steps of: step 1, applying a polysilicon layer for an emitting
electrode of the
germanium-
silicon heterojunction bipolar
transistor,
doping the emitting
electrode, then, executing quick thermal annealing, and diffusing and redistributing the impurities; step 2, executing pre-amorphization
ion implantation with medium and
high dosage of large atom impurities on the polysilicon emitting
electrode, annealing quickly, realizing re-
crystallization of the amorphous emitting electrode, and generating a
single crystal layer, thereby forming an emitting area / base area junction by the monocrystal
silicon / monocrystal
germanium and silicon; step 3, executing quick thermal annealing after the process of pre-amorphization
ion implantation, and crystallizing the amorphous emitting electrode. With the method provided by the invention, the
noise caused by a polysilicon emitting electrode is reduced, and
noise characteristics of devices are improved.