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Bipolar semiconductor device and method for manufacturing same

A semiconductor and bipolar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as difficulty in reducing density and improving the performance of bipolar transistors, and achieve increased current increase The effect of high efficiency, low cost and simple process

Inactive Publication Date: 2011-07-20
HONDA MOTOR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, even if the technology for improving the performance of MOS transistors disclosed in the above-mentioned Patent Documents 1 and 2 is used, it is difficult to reduce the density of surface states (ie, surface energy levels) located near the intermediate energy gap 604, and thus it is difficult to improve the performance of bipolar transistors. performance

Method used

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  • Bipolar semiconductor device and method for manufacturing same
  • Bipolar semiconductor device and method for manufacturing same
  • Bipolar semiconductor device and method for manufacturing same

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Embodiment approach 1

[0041] Refer below Figure 1 ~ Figure 3 , Embodiment 1 of the bipolar semiconductor device of the present invention will be described. The bipolar semiconductor device is an example of a BJT. refer to Figure 1 ~ Figure 3 The manufacturing method and structure of the BJT will be described. figure 1 It is a flowchart showing each step of the manufacturing method. figure 2 (a) to (g) show the cross section of BJT100 produced in each process. image 3 will be figure 2 (f) in (f) is enlarged and shows the detailed structure of the surface protection film.

[0042] The manufacturing method of BJT is comprised by the following flow|flow (1)-(11) (step S11-S21). like figure 1 As shown, each process is executed in the order of step S11 to step 21. (1) Substrate (crystal) preparation process of n+ type low-resistance SiC semiconductor element (step S11)

[0043] (2) Formation process of n-type high impedance conductor (step S12)

[0044] (3) Step of forming a p-type chann...

Embodiment approach 2

[0082] Refer below Figure 4 , the second embodiment of the bipolar semiconductor device of the present invention will be described. The bipolar semiconductor device in Embodiment 2 is BJT200. Compared with the first embodiment, the BJT200 manufacturing process of the second embodiment differs only in the content of the interface deactivation treatment and the surface protection film formation process (step S18), and the other processes (steps S11-S17, S19-S21) are different from those of the first embodiment. A BJT manufacturing process is the same.

[0083] Figure 4 Shown is a cross-sectional structural diagram in a state where the emitter 41 , the base 42 , and the collector 43 have already been formed. In the second embodiment, steps S18 "(1) Inactivation treatment of the SiC surface" and "(2) Formation and heat treatment of the surface protection film" are the same as those in the first embodiment. In step S18 of Embodiment 2, the SiNx deposition process is carried o...

Embodiment approach 3

[0089] Refer below Figure 5 , Embodiment 3 of the bipolar semiconductor device of the present invention will be described. The bipolar semiconductor device of Embodiment 3 is a pn diode 300 . and figure 2 Compared with the multilayer structure shown in (a), the multilayer structure when the semiconductor device is a pn diode 300 is composed of a two-layer structure composed of the negative electrode region 61 and the positive electrode region 62 . In the pn diode 300, the exposed SiC surface is similarly subjected to an interface deactivation treatment and a surface protective film forming process. The content of this step is the same as that of step S18 described in the first embodiment. Other manufacturing steps are determined or changed according to the manufacturing steps of pn diodes. A negative electrode 63 is formed in the negative electrode region 61 , and a positive electrode 64 is formed in the positive electrode region 62 . In addition, as in Embodiment 1, on...

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Abstract

Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm-3.

Description

technical field [0001] The invention relates to a bipolar semiconductor device and a manufacturing method thereof, in particular to a bipolar semiconductor device and a manufacturing method thereof which remove surface states (ie, surface energy levels) generated on the surface of a semiconductor element and improve current amplification rate. Background technique [0002] Compared with silicon, which is widely used in semiconductor devices, semiconductor devices using silicon carbide (Silicon Carbide, hereinafter referred to as "SiC") have a larger band gap energy and are more suitable for high voltage, high power, and high temperature operating conditions. It is expected to be applied to power devices and the like. The structure of SiC power devices currently developed is mainly divided into two types: "MOS type" and "junction type". [0003] Junction SiC power semiconductor devices mainly include Static Induction Transistor ("SIT"), Junction Field Effect Transistor ("JFE...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L21/329H01L29/73H01L29/80
CPCH01L29/6609H01L29/6606H01L29/66295H01L29/732H01L2924/13091H01L2224/06181H01L29/66068H01L29/8613H01L29/045H01L29/66416H01L2924/0002H01L29/42304H01L23/3192H01L29/7722H01L29/1608H01L23/3171H01L2924/1305H01L2924/13062H01L2924/00
Inventor 根来佑树堀内明彦岩永健介横山诚一桥本英喜野中贤一前山雄介佐藤雅清水正章
Owner HONDA MOTOR CO LTD
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