1056 results about "Surface states" patented technology

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are fabricated by forming an ultra-thin catalytic metal layer, e.g., a monolayer thick layer of Pd or Pd, on a Si-based semiconductor substrate, electrolessly plating on the catalytic layer comprising at least one refractory or lanthanum series transition metal or metal-based dielectric precursor layer, such as of Zr and/or Hf, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one high-k metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.

High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolytically plating a metal or metal-based dielectric precursor layer comprising at least one refractory or lanthanum series transition metal, on a semiconductor substrate, typically a silicon-based substrate, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one refractory or lanthanum series transition metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.

A thin film transistor (1) wherein a gate electrode (3) is formed on an insulative substrate (2), a gate insulating layer (4) is formed on the gate electrode (3), a semiconductor layer (5) is formed on the gate insulating layer (4), a source electrode (6) and a drain electrode (7) are formed on the semiconductor layer (5), and a protective layer (8) covering them are formed. The semiconductor layer (5) is isolated from the atmosphere. The semiconductor layer (5) (active layer) is formed of a ZnO polycrystalline semiconductor doped with, for example, a group V element. Since the surface state of the ZnO semiconductor is reduced thanks to the protective layer (8) and inward expansion of the depletion layer is prevented, the ZnO semiconductor is of an n-type showing its intrinsic resistance value and contains excessive free electrons. The added element acts as acceptor impurities in the ZnO semiconductor, decreasing the excessive electrons. Thus the gate voltage to eliminate the excessive free electrons lowers, thereby making the threshold voltage around 0 V. A semiconductor device using a zinc oxide for an active layer and having a protective layer for isolating the active layer from the atmosphere can be actually used.

In the case where a contact hole is formed by a conventional process of the semiconductor device fabrication, a resist is required to be formed almost entirely over a substrate in order to form the resist over the film where the contact hole is not formed. Accordingly, the throughput is considerably low. Further, when the resist spreads to the area of the contact hole when the amount of the resist to be applied and the surface state of the base are not fully controlled, contact defect would occur. Thus, improvements are required. According to the invention, in forming a semiconductor device, a part to be a contact hole of the semiconductor device may be covered with a first organic film that is liquid repellent. Subsequently, a second organic film serving as an insulating film is formed on the area where the first organic film is not formed, and the first organic film is removed thereafter to form a contact hole.

This invention provides an information output apparatus which outputs tactile information or the like corresponding to the surface state of an object as three-dimensional information together with image information, and allows the user to easily discriminate the surface material or the like of an image object in the image information.

A hybrid display unit of the information display apparatus of this invention has a structure formed by overlaying, e.g., a display panel used to display an image, and an unevenness output element group used to output the unevenness level of that image, and voltage values to be applied to respective unevenness output elements of the unevenness output element group are determined on the basis of, e.g., unevenness information stored in a memory. Therefore, material differences (smooth or rough touch) of images displayed on the display panel can be felt by touching unevenness output by the unevenness output elements.

A cellulose acylate solution containing a cellulose acylate which satisfies 2.5≦A+B≦3, 0≦A≦2.5, 0.3≦B≦3 (wherein A is the substitution degree of an acetyl group, and B is the sum of the substitution degrees of an acyl group having 3 to 7 carbon atoms) and whose content of sulfur atoms of residual sulfate moiety S is such that 50 ppm<S<500 ppm. When solution casting is carried out using this solution, a cellulose acylate film having good surface state and low peel-off load can be produced.

A surface shape measuring apparatus, comprising: a stereo-photographing part 3 for photographing an object 1 in stereo; a relative position changing part 4 for changing the positional relation between the stereo-photographing part 3 and the object 1; means 5 for storing stereo-photographing parameters in a plurality of directions from which the stereo-photographing part 3 photographs the object 1; a stereo-image generating means 6 for controlling the stereo-photographing part 3 to photograph the object 1 from the plurality of directions with the stored stereo-photographing parameters and generating stereo images of the object 1; and a surface shape processing means 7 for measuring the surface shape of the object 1 based on the stereo images of the object 1.

By irradiating a detection beam from an irradiation system of a detection device to a scale used for measuring the position of a wafer stage, and detecting the detection beam via the scale by a photodetection system, a surface state (an existence state of foreign substance) of the scale is detected. With this operation, detection of the surface state can be performed contactlessly with respect to the scale. Moreover, movement control of the wafer stage can be performed with high precision by taking the surface state into consideration.

The invention relates to a method for forming graphene quantum dots, and in particular, to doped graphene quantum dots. The graphene quantum dots are co-doped with nitrogen and sulfur. The co-doped elements introduce a new type and high density of surface state of graphene quantum dots, leading to high yield and excitation-independent emission.

The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

It is an object of the present invention to provide a portable telephone in which a display portion can be used as a mirror and electric power can be saved under a key locked state. In the telephone according to the present invention, in a front surface of a display portion (10), a panel (8) that is brought into a transparent state when voltage is not applied thereto, and is brought into a mirror surface state when voltage is applied is arranged. When the telephone is set to a key locked state, the panel (8) is brought to the mirror surface state and the display of the display portion (10) is turned off. Under a specific condition that, for instance, a call is received in the key locked state, the panel (8) can be suitably brought to the transparent state and the display of the display portion (10) can be turned on. Under a key unlocked state, while any key is operated, at least the panel (8) is brought to the transparent state and the display of the display portion (10) is turned on. When the key is not operated for a prescribed time, the panel (8) is brought to the mirror surface state and the display of the display portion (10) is turned off.

It is an object to provide a manufacturing method for a large amount of positive electrode active material with few variations, having a highly uniform surface condition, micro-size, and high performance. An aqueous solution of a compound, which becomes the source material for the positive electrode active material, is put in an airtight container and irradiated with microwaves, thus heating while water in the airtight container is evaporated and a high pressure is formed in the air tight container. A large amount of micro-sized positive electrode active material having a highly uniform surface condition can be formed. A compound, which becomes the source material for the positive electrode active material, is put in an airtight container and irradiated with microwaves, thus heating while water in the airtight container is evaporated and a high pressure is formed in the air tight container.

Flash memory cells are provided that include a first source/drain region and a second source/drain region separated by a channel region. A first gate opposes. A first gate insulator separates the first gate from the channel. The first gate insulator includes a graded composition gate insulator. A second gate is separated from the first gate insulator by a second gate insulator. The above memory cells produce gate insulators with less charging at the interface between composite insulator layers and provide gate insulators with low surface state densities. The memory cells substantially reduce large barrier heights or energy problems by using dielectrics having suitably, adjustably lower barrier heights in contact with the polysilicon floating gate. Such adjustable barrier heights of controlled thicknesses can be formed using a silicon suboxide and a silicon oxycarbide dielectrics prepared according to the process as described herein.

The invention discloses a photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and a preparation method thereof. The photoconductive detector includes a p-type silicon substrate, a silicon dioxide isolation layer, a top electrode, a graphene film, a boron-doped silicon quantum dot film and a bottom electrode. The photoconductive detector is capable of carrying out wide-spectrum detection, so that a problem of low response to infrared detection by the traditional silicon-based PIN structure can be solved. Because the graphene is used to form an active layer and a transparent electrode, a dead layer is eliminated and incident light absorption is enhanced. With the silicon dioxide isolation layer, the silicon surface state can be reduced. The detector can work normally at a low bias voltage; the absorbed light of the boron-doped silicon quantum dot layer is converted into photon-generated carriers and the generated photon-generated carriers being hole electron pairs are separated under the effect of the built-in electric field, so that the high gain can be obtained. In addition, the preparation method is simple; the cost is low; the response degree is high; the response speed is fast; the internal gain is high; the switch ratio is low; and integration is easy to realize.