Photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and preparation method thereof

Abstract

The invention discloses a photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and a preparation method thereof. The photoconductive detector includes a p-type silicon substrate, a silicon dioxide isolation layer, a top electrode, a graphene film, a boron-doped silicon quantum dot film and a bottom electrode. The photoconductive detector is capable of carrying out wide-spectrum detection, so that a problem of low response to infrared detection by the traditional silicon-based PIN structure can be solved. Because the graphene is used to form an active layer and a transparent electrode, a dead layer is eliminated and incident light absorption is enhanced. With the silicon dioxide isolation layer, the silicon surface state can be reduced. The detector can work normally at a low bias voltage; the absorbed light of the boron-doped silicon quantum dot layer is converted into photon-generated carriers and the generated photon-generated carriers being hole electron pairs are separated under the effect of the built-in electric field, so that the high gain can be obtained. In addition, the preparation method is simple; the cost is low; the response degree is high; the response speed is fast; the internal gain is high; the switch ratio is low; and integration is easy to realize.

Description

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AI Technical Summary

Benefits of technology

This patented inventive method involves creating an optode that captures incoming light on its surfaces while also separating charges from those inside them through electrical fields applied across their structure. These methods make possible for efficient use of solar energy without generating excess heat or causing damage during operation. Additionally, this new design allows for easy integration into different technologies such as complementary metal oxide semi conductors (CMOS).

Problems solved by technology

This patents describes how traditional methods for creating optoelectronic components like photosensitive diodes use special materials that absorb short wave lights such as infra red rays. However, these techniques may result in slow responses due to longer waves being blocked out at certain frequencies. To address this issue, researchers developed different types of semiconductor nanopillars called quantum dot particles instead of conventional pnjunctions. These nanoconelets contain specific elements attached through their edges, allowing them to transport charge carriers into one another without losing any energy during radiation exposure time. They provide better performance than regular metal films when exposed over many hours of sunlight compared to normal indoor environments where they were previously designed.

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